array(70) {
["id"]=>
string(3) "658"
["pdf_add"]=>
string(79) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=7872"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(1) " "
["ljbh"]=>
string(18) "APTGT400U120D4G-ND"
["zzsbh"]=>
string(15) "APTGT400U120D4G"
["zddgs"]=>
string(2) "10"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.000000"
["gys_id"]=>
string(4) "7612"
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1552274532"
["ms"]=>
string(31) "IGBT MODULE 1200V 600A 2250W D4"
["xl"]=>
string(1) "-"
["zzs"]=>
string(16) "Microchip/微芯"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Microsemi Corporation"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["igbtlx"]=>
string(18) "沟槽型场截止"
["pz"]=>
string(6) "单路"
["dy_jsjj"]=>
string(5) "1200V"
["dl_jdj"]=>
string(4) "600A"
["gl_zdz"]=>
string(5) "2250W"
["bt_vge_ic"]=>
string(17) "2.1V @ 15V，400A"
["dl_jdjjz_zdz"]=>
string(3) "8mA"
["bt_vce_srdr"]=>
string(10) "28nF @ 25V"
["sr"]=>
string(6) "标准"
["ntc_rmdz"]=>
string(3) "无"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "底座安装"
["fz_wk"]=>
string(2) "D4"
["gysqjfz"]=>
string(2) "D4"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(1) "-"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "插件"
["gl_pin"]=>
string(1) "5"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "132"
["wl_num"]=>
string(4) "1042"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(17) "golon_jtg_igbt_mk"
["ch_bm"]=>
string(25) "晶体管 - IGBT - 模块"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.rate,a.rate_hot,sum(a.rate+a.rate_hot/100) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_igbt_mk'
封装：D4
外壳：D4
描述：
IGBT MODULE 1200V 600A 2250W D4
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配置：单路
集射极击穿-最大电压(V)：1200V
集电极(ic)最大电流值(A)：600A
最大值功率(W)：2250W
输入：标准
ntc热敏电阻：无
|
string(48) "'pz','dy_jsjj','dl_jdj','gl_zdz','sr','ntc_rmdz'"
SELECT COLUMN_NAME as bt,COLUMN_COMMENT as title FROM INFORMATION_SCHEMA.Columns WHERE ORDINAL_POSITION >=(SELECT ORDINAL_POSITION FROM INFORMATION_SCHEMA.Columns WHERE table_name='golon_jtg_igbt_mk' AND table_schema='golon' and COLUMN_NAME='ms')+1 and ORDINAL_POSITION <=(SELECT ORDINAL_POSITION FROM INFORMATION_SCHEMA.Columns WHERE table_name='golon_jtg_igbt_mk' AND table_schema='golon' and COLUMN_NAME='is_new_time') and table_name='golon_jtg_igbt_mk' AND table_schema='golon' and COLUMN_NAME not in('tdxl','gysqjfz','lm','fz_wk','zzs','tag','wk_cc','zzs_old','zzs_new','ljzt','spq','sqp','is_rohs','bz','gys_id','gm_gys_id','xysl','cfkc','dj','price_addtime','zddgs','spq','moq''gl_zz','gl_dm','gl_dmtp','symbol','gl_vdd','gl_gnd','gl_jz','gl_bdm','gl_bdmsm','gl_kbc','gl_dmgx','pcbfzk_id','pcbfzk','jyid','cat_id','wl_num','admin_id','mpn_bm','ch_bm','lock_dm','is_use_cat_id','is_new_time','gl_zz','gl_pin') and COLUMN_NAME not in ('pz','dy_jsjj','dl_jdj','gl_zdz','sr','ntc_rmdz') limit 8
系列：-
IGBT类型：沟槽型场截止
不同?vge，ic 时的?vce（on）：2.1V @ 15V，400A
电流-集电极截止(最大值)：8mA
不同?vce 时的输入电容（cies）：28nF @ 25V
工作温度：-40°C ~ 150°C（TJ）
安装类型：底座安装
元器件等级：-
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