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array(72) { ["id"]=> string(5) "48000" ["pdf_add"]=> string(66) "http://ixapps.ixys.com/DataSheet/DS100760(IXFT-FH30N85X---HV)_.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(53) "//media.digikey.com/Renders/IXYS%20Renders/TO-263.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "IXFT30N85XHV" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 850V 30A TO268" ["xl"]=> string(11) "HiPerFET™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "850V" ["dl_lxlj"]=> string(11) "30A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "220 毫欧 @ 500mA，10V" ["bt_id_vgs_zdz"]=> string(12) "5.5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(10) "68nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "2460pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "695W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-268-3，D³Pak（2 引线 + 接片），TO-268AA" ["gysqjfz"]=> string(16) "TO-268（IXFT）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607928260" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXFT30N85XHV复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-268（IXFT）
外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA
描述： MOSFET N-CH 850V 30A TO268
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48000 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：850V
电流-连续漏极(id)：30A（Tc）
Vgs(最大值)：±30V
功率-最大值：695W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103948000
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFT30N85XHV' ) LIMIT 1
array(72) { ["id"]=> string(5) "51432" ["pdf_add"]=> string(60) "http://ixapps.ixys.com/DataSheet/DS98737B(IXFH-FT12N50F).pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(51) "//media.digikey.com/Photos/IXYS%20Photos/TO-268.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "IXFT12N100F" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 1000V 12A TO268" ["xl"]=> string(10) "HiPerRF™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(5) "1000V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "1.05 欧姆 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(10) "5.5V @ 4mA" ["bt_vgs_sjdh"]=> string(10) "77nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2700pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-268-3，D³Pak（2 引线 + 接片），TO-268AA" ["gysqjfz"]=> string(16) "TO-268（IXFT）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937644" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXFT12N100F复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-268（IXFT）
外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA
描述： MOSFET N-CH 1000V 12A TO268
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51432 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1000V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103951432
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFT12N100F' ) LIMIT 1
array(72) { ["id"]=> string(5) "51433" ["pdf_add"]=> string(60) "http://ixapps.ixys.com/DataSheet/DS98732A(IXFH-FT6N100F).pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(51) "//media.digikey.com/Photos/IXYS%20Photos/TO-268.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "IXFT6N100F" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 1000V 6A TO268" ["xl"]=> string(10) "HiPerRF™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(5) "1000V" ["dl_lxlj"]=> string(10) "6A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "1.9 欧姆 @ 3A，10V" ["bt_id_vgs_zdz"]=> string(12) "5.5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(10) "54nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1770pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "180W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-268-3，D³Pak（2 引线 + 接片），TO-268AA" ["gysqjfz"]=> string(16) "TO-268（IXFT）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937644" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXFT6N100F复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-268（IXFT）
外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA
描述： MOSFET N-CH 1000V 6A TO268
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51433 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1000V
电流-连续漏极(id)：6A（Tc）
Vgs(最大值)：±20V
功率-最大值：180W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103951433
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFT6N100F' ) LIMIT 1
array(72) { ["id"]=> string(5) "51461" ["pdf_add"]=> string(90) "https://media.digikey.com/pdf/Data%20Sheets/IXYS%20PDFs/IXF(H,T)24N50Q,_IXF(H,T)26N50Q.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(13) "IXFT26N50Q TR" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 500V 26A TO268" ["xl"]=> string(11) "HiPerFET™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "500V" ["dl_lxlj"]=> string(11) "26A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "200 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(10) "4.5V @ 4mA" ["bt_vgs_sjdh"]=> string(10) "95nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3900pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-268-3，D³Pak（2 引线 + 接片），TO-268AA" ["gysqjfz"]=> string(16) "TO-268（IXFT）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937649" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXFT26N50Q TR复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-268（IXFT）
外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA
描述： MOSFET N-CH 500V 26A TO268
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51461 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：500V
电流-连续漏极(id)：26A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103951461
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFT26N50Q TR' ) LIMIT 1
array(72) { ["id"]=> string(5) "51462" ["pdf_add"]=> string(74) "https://media.digikey.com/pdf/Data%20Sheets/IXYS%20PDFs/IXF(H,T)40N30Q.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(13) "IXFT40N30Q TR" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 300V 40A TO268" ["xl"]=> string(11) "HiPerFET™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "300V" ["dl_lxlj"]=> string(11) "40A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "85 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 4mA" ["bt_vgs_sjdh"]=> string(11) "140nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3560pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-268-3，D³Pak（2 引线 + 接片），TO-268AA" ["gysqjfz"]=> string(16) "TO-268（IXFT）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937649" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXFT40N30Q TR复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-268（IXFT）
外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA
描述： MOSFET N-CH 300V 40A TO268
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51462 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：300V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103951462
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFT40N30Q TR' ) LIMIT 1
array(72) { ["id"]=> string(5) "51463" ["pdf_add"]=> string(76) "https://media.digikey.com/pdf/Data%20Sheets/IXYS%20PDFs/IXF(H,K,T)52N30Q.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "IXFT52N30Q TRL" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 300V 52A TO268" ["xl"]=> string(11) "HiPerFET™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "300V" ["dl_lxlj"]=> string(11) "52A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "60 毫欧 @ 26A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 4mA" ["bt_vgs_sjdh"]=> string(11) "150nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5300pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "360W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-268-3，D³Pak（2 引线 + 接片），TO-268AA" ["gysqjfz"]=> string(16) "TO-268（IXFT）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937649" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXFT52N30Q TRL复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-268（IXFT）
外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA
描述： MOSFET N-CH 300V 52A TO268
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51463 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：300V
电流-连续漏极(id)：52A（Tc）
Vgs(最大值)：±20V
功率-最大值：360W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103951463
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFT52N30Q TRL' ) LIMIT 1
array(72) { ["id"]=> string(5) "51464" ["pdf_add"]=> string(74) "https://media.digikey.com/pdf/Data%20Sheets/IXYS%20PDFs/IXF(H,T)58N20Q.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "IXFT58N20Q TRL" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 200V 58A TO268" ["xl"]=> string(11) "HiPerFET™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(11) "58A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "40 毫欧 @ 29A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 4mA" ["bt_vgs_sjdh"]=> string(11) "140nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3600pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-268-3，D³Pak（2 引线 + 接片），TO-268AA" ["gysqjfz"]=> string(16) "TO-268（IXFT）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937649" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXFT58N20Q TRL复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-268（IXFT）
外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA
描述： MOSFET N-CH 200V 58A TO268
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51464 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：58A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103951464
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFT58N20Q TRL' ) LIMIT 1

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