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array(68) { ["id"]=> string(5) "25466" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(13) "DNA30ER2200IY" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "POWER DIODE DISCRETES-RECTIFIER" ["xl"]=> string(1) "-" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ejglx"]=> string(6) "标准" ["dy_dc"]=> string(72) "" ["dl_pjzl"]=> string(3) "30A" ["bt_if"]=> string(11) "1.26V @ 30A" ["sd"]=> string(37) "标准恢复 >500ns，> 200mA（Io）" ["fxhfsj"]=> string(37) "标准恢复 >500ns，> 200mA（Io）" ["bt_vr_dl_fx"]=> string(13) "40µA @ 2200V" ["bt_vr_dr"]=> string(17) "7pF @ 700V，1MHz" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(17) "TO-262-2，I²Pak" ["gysqjfz"]=> string(17) "TO-262（I2PAK）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gzwd"]=> string(11) "-55°C ~ 17" ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "3" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "115" ["wl_num"]=> string(4) "1026" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(15) "golon_ejg_zlq_d" ["ch_bm"]=> string(26) "二极管-整流器-单路" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597810140" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ejg_zlq_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1026" ["parent_id"]=> string(3) "112" ["lb"]=> string(37) "二极管 二极管-整流器-单路" ["action_name"]=> string(2) "e3" ["rate"]=> string(4) "1.18" ["rate_hot"]=> string(2) "45" ["moq_rate"]=> string(6) "1.6300" } }
型号： DNA30ER2200IY复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-262（I2PAK）
外壳：TO-262-2，I²Pak
描述： POWER DIODE DISCRETES-RECTIFIER
SELECT * FROM `golon_ejg_zlq_d` WHERE ( `id` = 25466 ) LIMIT 1
二极管类型：标准
DC最大反向电压(Vr)：
平均整流电流(io)：30A
不同if时电压-正向(vf)：1.26V @ 30A
速度：标准恢复 >500ns，> 200mA（Io）
反向恢复时间(trr)：标准恢复 >500ns，> 200mA（Io）
不同vr的电流-反向漏电流：40µA @ 2200V
工作温度-结：-55°C ~ 17
丝印：(请登录)
料号：102625466
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'DNA30ER2200IY' ) LIMIT 1
array(72) { ["id"]=> string(5) "16336" ["pdf_add"]=> string(62) "http://ixdev.ixys.com/DataSheet/DS99322F(IXTA-TI-TP12N50P).pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(13) "IXTI12N50P-ND" ["zzsbh"]=> string(10) "IXTI12N50P" ["zddgs"]=> string(2) "50" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 500V 12A I2-PAK" ["xl"]=> string(8) "Polar™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "500V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "500 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(13) "5.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "29nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "1830pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "200W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²Pak，TO-262AA" ["gysqjfz"]=> string(17) "TO-262（I2PAK）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXTI12N50P复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-262（I2PAK）
外壳：TO-262-3，长引线，I²Pak，TO-262AA
描述： MOSFET N-CH 500V 12A I2-PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 16336 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：500V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：±30V
功率-最大值：200W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103916336
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXTI12N50P' ) LIMIT 1
array(72) { ["id"]=> string(5) "16346" ["pdf_add"]=> string(71) "//media.digikey.com/pdf/Data%20Sheets/IXYS%20PDFs/IXTA,I,P%2010N60P.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(13) "IXTI10N60P-ND" ["zzsbh"]=> string(10) "IXTI10N60P" ["zddgs"]=> string(2) "50" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 600V 10A I2-PAK" ["xl"]=> string(10) "PolarHV™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "10A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "740 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "32nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "1610pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "200W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²Pak，TO-262AA" ["gysqjfz"]=> string(17) "TO-262（I2PAK）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXTI10N60P复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-262（I2PAK）
外壳：TO-262-3，长引线，I²Pak，TO-262AA
描述： MOSFET N-CH 600V 10A I2-PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 16346 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：10A（Tc）
Vgs(最大值)：±30V
功率-最大值：200W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103916346
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXTI10N60P' ) LIMIT 1
array(72) { ["id"]=> string(5) "17778" ["pdf_add"]=> string(65) "http://ixdev.ixys.com/DataSheet/DS99597E(IXFA-IXFI-IXFP7N80P).pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(12) "IXFI7N80P-ND" ["zzsbh"]=> string(9) "IXFI7N80P" ["zddgs"]=> string(2) "50" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 800V 7A TO-263" ["xl"]=> string(23) "HiPerFET™, PolarHT™" ["zzs"]=> string(14) "IXYS/艾赛斯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(4) "IXYS" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(10) "7A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "1.44 欧姆 @ 3.5A，10V" ["bt_id_vgs_zdz"]=> string(8) "5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "32nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "1890pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "200W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²Pak，TO-262AA" ["gysqjfz"]=> string(17) "TO-262（I2PAK）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IXFI7N80P复制
状态： 在售 修改
品牌： IXYS/艾赛斯复制
封装：TO-262（I2PAK）
外壳：TO-262-3，长引线，I²Pak，TO-262AA
描述： MOSFET N-CH 800V 7A TO-263
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 17778 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±30V
功率-最大值：200W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103917778
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFI7N80P' ) LIMIT 1

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