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array(68) { ["id"]=> string(5) "33214" ["pdf_add"]=> string(48) "http://www.vishay.com/docs/93377/vs-8ewf12sm.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(67) "https://media.digikey.com/Renders/On%20Semi%20Renders/DPAK_369C.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "VS-8EWS10STRRPBF" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "DIODE GEN PURP 1KV 8A DPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ejglx"]=> string(6) "标准" ["dy_dc"]=> string(72) "" ["dl_pjzl"]=> string(2) "8A" ["bt_if"]=> string(9) "1.1V @ 8A" ["sd"]=> string(37) "标准恢复 >500ns，> 200mA（Io）" ["fxhfsj"]=> string(0) "" ["bt_vr_dl_fx"]=> string(13) "50µA @ 1000V" ["bt_vr_dr"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(35) "TO-252-3,DPAK(2引线+接片),SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gzwd"]=> string(15) "表面贴装型" ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "3" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "115" ["wl_num"]=> string(4) "1026" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(15) "golon_ejg_zlq_d" ["ch_bm"]=> string(26) "二极管-整流器-单路" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597822331" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ejg_zlq_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1026" ["parent_id"]=> string(3) "112" ["lb"]=> string(37) "二极管 二极管-整流器-单路" ["action_name"]=> string(2) "e3" ["rate"]=> string(4) "1.18" ["rate_hot"]=> string(2) "45" ["moq_rate"]=> string(6) "1.6300" } }
型号： VS-8EWS10STRRPBF复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3,DPAK(2引线+接片),SC-63
描述： DIODE GEN PURP 1KV 8A DPAK
SELECT * FROM `golon_ejg_zlq_d` WHERE ( `id` = 33214 ) LIMIT 1
二极管类型：标准
DC最大反向电压(Vr)：
平均整流电流(io)：8A
不同if时电压-正向(vf)：1.1V @ 8A
速度：标准恢复 >500ns，> 200mA（Io）
反向恢复时间(trr)：
不同vr的电流-反向漏电流：50µA @ 1000V
工作温度-结：表面贴装型
丝印：(请登录)
料号：102633214
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'VS-8EWS10STRRPBF' ) LIMIT 1
array(72) { ["id"]=> string(4) "5047" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73444/sud50p10.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Semi_Renders/TO-252-3,_DPak_(2_Leads_+_Tab),_SC-63.jpg" ["ljbh"]=> string(19) "SUD50P10-43L-GE3-ND" ["zzsbh"]=> string(16) "SUD50P10-43L-GE3" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 100V 37.1A TO252" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(13) "37.1A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "43 毫欧 @ 9.2A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "160nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4600pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "8.3W（Ta），136W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SUD50P10-43L-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET P-CH 100V 37.1A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5047 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：37.1A（Tc）
Vgs(最大值)：±20V
功率-最大值：8.3W（Ta），136W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10395047
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SUD50P10-43L-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5239" ["pdf_add"]=> string(49) "http://www.vishay.com/docs/69796/sud35n10-26p.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Semi_Renders/TO-252-3,_DPak_(2_Leads_+_Tab),_SC-63.jpg" ["ljbh"]=> string(18) "SUD35N10-26P-E3-ND" ["zzsbh"]=> string(15) "SUD35N10-26P-E3" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 100V 35A TO252" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "35A（Tc）" ["qddy"]=> string(8) "7V，10V" ["bt_id_vgs_rds"]=> string(21) "26 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "47nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2000pF @ 12V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "8.3W（Ta），83W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SUD35N10-26P-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 100V 35A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5239 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：35A（Tc）
Vgs(最大值)：±20V
功率-最大值：8.3W（Ta），83W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10395239
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SUD35N10-26P-E3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5536" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/66824/sud42n03.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Semi_Renders/TO-252-3,_DPak_(2_Leads_+_Tab),_SC-63.jpg" ["ljbh"]=> string(22) "SUD42N03-3M9P-GE3TR-ND" ["zzsbh"]=> string(17) "SUD42N03-3M9P-GE3" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 42A TO252" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "42A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.9 毫欧 @ 22A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "100nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3535pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "2.5W（Ta），73.5W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SUD42N03-3M9P-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 30V 42A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5536 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：42A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），73.5W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395536
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SUD42N03-3M9P-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5772" ["pdf_add"]=> string(84) "//media.digikey.com/pdf/Data%20Sheets/Vishay%20Siliconix%20PDFs/SUD50N03-12P-GE3.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Semi_Renders/TO-252-3,_DPak_(2_Leads_+_Tab),_SC-63.jpg" ["ljbh"]=> string(19) "SUD50N03-12P-GE3-ND" ["zzsbh"]=> string(16) "SUD50N03-12P-GE3" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 30V 16.8A TO252" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(13) "16.8A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "17 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "42nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1600pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "39W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SUD50N03-12P-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 30V 16.8A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5772 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16.8A（Ta）
Vgs(最大值)：±20V
功率-最大值：39W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395772
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SUD50N03-12P-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5841" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/73540/73540.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Semi_Renders/TO-252-3,_DPak_(2_Leads_+_Tab),_SC-63.jpg" ["ljbh"]=> string(21) "SUD50N03-06AP-T4E3-ND" ["zzsbh"]=> string(18) "SUD50N03-06AP-T4E3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 90A TO252" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "90A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.7 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "95nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3800pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "10W（Ta），83W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SUD50N03-06AP-T4E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 30V 90A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5841 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：90A（Tc）
Vgs(最大值)：±20V
功率-最大值：10W（Ta），83W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10395841
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SUD50N03-06AP-T4E3' ) LIMIT 1
array(72) { ["id"]=> string(4) "6170" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/65437/sud70090e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Semi_Renders/TO-252-3,_DPak_(2_Leads_+_Tab),_SC-63.jpg" ["ljbh"]=> string(16) "SUD70090E-GE3-ND" ["zzsbh"]=> string(13) "SUD70090E-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 100V 50A DPAK TO252" ["xl"]=> string(12) "ThunderFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(10) "7.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.9 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "50nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1950pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SUD70090E-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 100V 50A DPAK TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6170 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±20V
功率-最大值：125W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10396170
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SUD70090E-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "7021" ["pdf_add"]=> string(80) "//media.digikey.com/pdf/Data%20Sheets/Vishay%20Siliconix%20PDFs/SUD50N02-09P.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Semi_Renders/TO-252-3,_DPak_(2_Leads_+_Tab),_SC-63.jpg" ["ljbh"]=> string(19) "SUD50N02-09P-GE3-ND" ["zzsbh"]=> string(16) "SUD50N02-09P-GE3" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 20V 20A TO252" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "20A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "14 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "16nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1300pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "39.5W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SUD50N02-09P-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 20V 20A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7021 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：20A（Ta）
Vgs(最大值)：±20V
功率-最大值：39.5W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10397021
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SUD50N02-09P-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "8127" ["pdf_add"]=> string(49) "http://www.vishay.com/docs/62815/sud20n10-66l.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Semi_Renders/TO-252-3,_DPak_(2_Leads_+_Tab),_SC-63.jpg" ["ljbh"]=> string(19) "SUD20N10-66L-GE3-ND" ["zzsbh"]=> string(16) "SUD20N10-66L-GE3" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 16.9A TO-252" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(13) "16.9A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "66 毫欧 @ 6.6A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "30nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "860pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "2.1W（Ta），41.7W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SUD20N10-66L-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 100V 16.9A TO-252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8127 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：16.9A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），41.7W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10398127
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SUD20N10-66L-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "27795" ["pdf_add"]=> string(54) "http://www.vishay.com/docs/62843/sud08p06-155l-ge3.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Semi_Renders/TO-252-3,_DPak_(2_Leads_+_Tab),_SC-63.jpg" ["ljbh"]=> string(22) "SUD08P06-155L-GE3TR-ND" ["zzsbh"]=> string(17) "SUD08P06-155L-GE3" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(4) "2000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 60V 8.4A DPAK" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "8.4A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "155 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "19nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "450pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "1.7W（Ta），20.8W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(6) "TO-252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SUD08P06-155L-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：TO-252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET P-CH 60V 8.4A DPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27795 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：8.4A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.7W（Ta），20.8W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103927795
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SUD08P06-155L-GE3' ) LIMIT 1

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