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array(72) { ["id"]=> string(4) "1299" ["pdf_add"]=> string(77) "http://www.microsemi.com/document-portal/doc_download/7254-apt75m50b2-l-e-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(55) "//media.digikey.com/photos/Microsemi%20Photos/T-MAX.JPG" ["images"]=> string(75) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/T-MAX.JPG" ["ljbh"]=> string(13) "APT75M50B2-ND" ["zzsbh"]=> string(10) "APT75M50B2" ["zddgs"]=> string(1) "1" ["xysl"]=> string(2) "11" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 500V 75A T-MAX" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "500V" ["dl_lxlj"]=> string(11) "75A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "75 毫欧 @ 37A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "290nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "11600pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1040W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(15) "TO-247-3 变式" ["gysqjfz"]=> string(8) "T-MAX™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： APT75M50B2复制
状态： 在售 修改
品牌： Microchip/微芯复制
封装：T-MAX™
外壳：TO-247-3 变式
描述： MOSFET N-CH 500V 75A T-MAX
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1299 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：500V
电流-连续漏极(id)：75A（Tc）
Vgs(最大值)：±30V
功率-最大值：1040W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10391299
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'APT75M50B2' ) LIMIT 1
array(72) { ["id"]=> string(5) "17672" ["pdf_add"]=> string(76) "//media.digikey.com/pdf/Data%20Sheets/Microsemi%20PDFs/APT10M11(B2,L)VFR.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(55) "//media.digikey.com/photos/Microsemi%20Photos/T-MAX.JPG" ["images"]=> string(75) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/T-MAX.JPG" ["ljbh"]=> string(17) "APT10M11B2VFRG-ND" ["zzsbh"]=> string(14) "APT10M11B2VFRG" ["zddgs"]=> string(2) "30" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 100V 100A T-MAX" ["xl"]=> string(13) "POWER MOS V®" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "100A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "11 毫欧 @ 500mA，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "450nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "10300pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "520W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(15) "TO-247-3 变式" ["gysqjfz"]=> string(8) "T-MAX™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： APT10M11B2VFRG复制
状态： 在售 修改
品牌： Microchip/微芯复制
封装：T-MAX™
外壳：TO-247-3 变式
描述： MOSFET N-CH 100V 100A T-MAX
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 17672 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：±30V
功率-最大值：520W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103917672
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'APT10M11B2VFRG' ) LIMIT 1
array(72) { ["id"]=> string(5) "20317" ["pdf_add"]=> string(78) "http://www.microsemi.com/document-portal/doc_download/6796-apt26f120b2-l-c-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(55) "//media.digikey.com/photos/Microsemi%20Photos/T-MAX.JPG" ["images"]=> string(75) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/T-MAX.JPG" ["ljbh"]=> string(14) "APT26F120B2-ND" ["zzsbh"]=> string(11) "APT26F120B2" ["zddgs"]=> string(1) "1" ["xysl"]=> string(2) "13" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 1200V 27A T-MAX" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "27A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "650 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "300nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "9670pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1135W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(15) "TO-247-3 变式" ["gysqjfz"]=> string(8) "T-MAX™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： APT26F120B2复制
状态： 在售 修改
品牌： Microchip/微芯复制
封装：T-MAX™
外壳：TO-247-3 变式
描述： MOSFET N-CH 1200V 27A T-MAX
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20317 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：27A（Tc）
Vgs(最大值)：±30V
功率-最大值：1135W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920317
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'APT26F120B2' ) LIMIT 1
array(72) { ["id"]=> string(5) "32981" ["pdf_add"]=> string(77) "http://www.microsemi.com/document-portal/doc_download/7153-apt56m50b2-l-c-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(55) "//media.digikey.com/photos/Microsemi%20Photos/T-MAX.JPG" ["images"]=> string(75) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/T-MAX.JPG" ["ljbh"]=> string(13) "APT56M50B2-ND" ["zzsbh"]=> string(10) "APT56M50B2" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "212" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 500V 56A T-MAX" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "500V" ["dl_lxlj"]=> string(11) "56A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "100 毫欧 @ 28A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "220nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "8800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "780W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(15) "TO-247-3 变式" ["gysqjfz"]=> string(8) "T-MAX™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： APT56M50B2复制
状态： 在售 修改
品牌： Microchip/微芯复制
封装：T-MAX™
外壳：TO-247-3 变式
描述： MOSFET N-CH 500V 56A T-MAX
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32981 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：500V
电流-连续漏极(id)：56A（Tc）
Vgs(最大值)：±30V
功率-最大值：780W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932981
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'APT56M50B2' ) LIMIT 1
array(72) { ["id"]=> string(3) "546" ["pdf_add"]=> string(96) "https://www.microsemi.com/document-portal/doc_download/125227-apt85gr120b2-apt85gr120l-datasheet" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/Microsemi%20Photos/TO-247-3-PKG-Series.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "APT85GR120B2" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IGBT 1200V 170A 962W TO247" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(16) "Microchip/微芯" ["zzs_old"]=> string(20) "Microchip Technology" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["igbtlx"]=> string(3) "NPT" ["dy_jsjjc"]=> string(5) "1200V" ["dl_jdj"]=> string(4) "170A" ["dl_jdjmc"]=> string(4) "340A" ["bt_vge_zdz"]=> string(16) "3.2V @ 15V，85A" ["gx_zdz"]=> string(4) "962W" ["kgnl"]=> string(29) "6mJ（开），3.8mJ（关）" ["sclx"]=> string(6) "标准" ["sjdh"]=> string(5) "660nC" ["td_kg_z"]=> string(10) "43ns/300ns" ["cstj"]=> string(29) "600V，85A，4.3 欧姆，15V" ["fxhfsj"]=> string(29) "600V，85A，4.3 欧姆，15V" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(8) "T-MAX™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "135" ["wl_num"]=> string(4) "1045" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(16) "golon_jtg_ugbt_d" ["ch_bm"]=> string(24) "晶体管- IGBT/UGBT-单" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597909716" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["spq"]=> NULL ["moq"]=> string(2) "10" ["bz"]=> string(0) "" ["is_rohs"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_ugbt_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1045" ["parent_id"]=> string(3) "121" ["lb"]=> string(35) "晶体管 晶体管- IGBT/UGBT-单" ["action_name"]=> string(5) "jtg14" ["rate"]=> string(5) "1.186" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5360" } }
型号： APT85GR120B2复制
状态： 在售 修改
品牌： Microchip/微芯复制
封装：T-MAX™
外壳：TO-247-3
描述： IGBT 1200V 170A 962W TO247
SELECT * FROM `golon_jtg_ugbt_d` WHERE ( `id` = 546 ) LIMIT 1
IGBT 类型：NPT
电压-集射极击穿(最大值)：1200V
电流-集电极(Ic)(最大值)：170A
最大功率值：962W
开关能量：6mJ（开），3.8mJ（关）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1045546
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'APT85GR120B2' ) LIMIT 1
array(72) { ["id"]=> string(4) "2536" ["pdf_add"]=> string(100) "https://www.microsemi.com/document-portal/doc_download/125411-apt30gp60b2dlg-apt30gp60ldlg-datasheet" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/Microsemi%20Photos/TO-247-3-PKG-Series.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "APT30GP60B2DLG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "IGBT 600V 100A 463W TMAX" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["igbtlx"]=> string(2) "PT" ["dy_jsjjc"]=> string(4) "600V" ["dl_jdj"]=> string(4) "100A" ["dl_jdjmc"]=> string(4) "120A" ["bt_vge_zdz"]=> string(16) "2.7V @ 15V，30A" ["gx_zdz"]=> string(4) "463W" ["kgnl"]=> string(33) "260µJ（开），250µJ（关）" ["sclx"]=> string(6) "标准" ["sjdh"]=> string(4) "90nC" ["td_kg_z"]=> string(9) "13ns/55ns" ["cstj"]=> string(27) "400V，30A，5 欧姆，15V" ["fxhfsj"]=> string(27) "400V，30A，5 欧姆，15V" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(8) "T-MAX™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "135" ["wl_num"]=> string(4) "1045" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(16) "golon_jtg_ugbt_d" ["ch_bm"]=> string(24) "晶体管- IGBT/UGBT-单" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597910904" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["spq"]=> NULL ["moq"]=> string(2) "10" ["bz"]=> string(0) "" ["is_rohs"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_ugbt_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1045" ["parent_id"]=> string(3) "121" ["lb"]=> string(35) "晶体管 晶体管- IGBT/UGBT-单" ["action_name"]=> string(5) "jtg14" ["rate"]=> string(5) "1.186" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5360" } }
型号： APT30GP60B2DLG复制
状态： 在售 修改
品牌： Microchip/微芯复制
封装：T-MAX™
外壳：TO-247-3
描述： IGBT 600V 100A 463W TMAX
SELECT * FROM `golon_jtg_ugbt_d` WHERE ( `id` = 2536 ) LIMIT 1
IGBT 类型：PT
电压-集射极击穿(最大值)：600V
电流-集电极(Ic)(最大值)：100A
最大功率值：463W
开关能量：260µJ（开），250µJ（关）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10452536
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'APT30GP60B2DLG' ) LIMIT 1

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