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array(68) { ["id"]=> string(3) "642" ["pdf_add"]=> string(47) "http://www.cel.com/pdf/datasheets/NE4210S01.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(16) "NE4210S01-T1B-ND" ["zzsbh"]=> string(13) "NE4210S01-T1B" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(15) "HJ-FET 13DB S01" ["xl"]=> string(1) "-" ["zzs"]=> string(3) "CEL" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "CEL" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(4) "HFET" ["pl"]=> string(5) "12GHz" ["zy"]=> string(4) "13dB" ["dy_cs"]=> string(2) "2V" ["eddl"]=> string(4) "15mA" ["zsxs"]=> string(5) "0.5dB" ["dl_cs"]=> string(4) "10mA" ["gl_sc"]=> string(1) "-" ["dy_ed"]=> string(2) "4V" ["fz_wk"]=> string(5) "4-SMD" ["gysqjfz"]=> string(3) "SMD" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } } 型号： NE4210S01-T1B复制状态：在售修改品牌： CEL复制封装：SMD 外壳：4-SMD 描述： HJ-FET 13DB S01	SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 642 ) LIMIT 1 晶体管类型：HFET 频率(Hz)：12GHz 增益(dB)：13dB 测试电压(V)：2V 额定电流(A)：15mA 输出功率(W)：- 额定电压(V)：4V	类别：高频-FET,MOS管丝印：(请登录) 料号：1040642 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(68) { ["id"]=> string(3) "646" ["pdf_add"]=> string(47) "http://www.cel.com/pdf/datasheets/NE3210S01.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(16) "NE3210S01-T1B-ND" ["zzsbh"]=> string(13) "NE3210S01-T1B" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(19) "FET RF 4V 12GHZ S01" ["xl"]=> string(1) "-" ["zzs"]=> string(3) "CEL" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "CEL" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(4) "HFET" ["pl"]=> string(5) "12GHz" ["zy"]=> string(6) "13.5dB" ["dy_cs"]=> string(2) "2V" ["eddl"]=> string(4) "15mA" ["zsxs"]=> string(6) "0.35dB" ["dl_cs"]=> string(4) "10mA" ["gl_sc"]=> string(1) "-" ["dy_ed"]=> string(2) "4V" ["fz_wk"]=> string(5) "4-SMD" ["gysqjfz"]=> string(3) "SMD" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> NULL ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } } 型号： NE3210S01-T1B复制状态：修改品牌： CEL复制封装：SMD 外壳：4-SMD 描述： FET RF 4V 12GHZ S01	SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 646 ) LIMIT 1 晶体管类型：HFET 频率(Hz)：12GHz 增益(dB)：13.5dB 测试电压(V)：2V 额定电流(A)：15mA 输出功率(W)：- 额定电压(V)：4V	类别：高频-FET,MOS管丝印：(请登录) 料号：1040646 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	供应商: 库存:4K+ 加入购物车
array(68) { ["id"]=> string(3) "671" ["pdf_add"]=> string(47) "http://www.cel.com/pdf/datasheets/NE4210S01.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(12) "NE4210S01-ND" ["zzsbh"]=> string(9) "NE4210S01" ["zddgs"]=> string(2) "80" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(15) "HJ-FET 13DB S01" ["xl"]=> string(1) "-" ["zzs"]=> string(3) "CEL" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "CEL" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(4) "HFET" ["pl"]=> string(5) "12GHz" ["zy"]=> string(4) "13dB" ["dy_cs"]=> string(2) "2V" ["eddl"]=> string(4) "15mA" ["zsxs"]=> string(5) "0.5dB" ["dl_cs"]=> string(4) "10mA" ["gl_sc"]=> string(1) "-" ["dy_ed"]=> string(2) "4V" ["fz_wk"]=> string(5) "4-SMD" ["gysqjfz"]=> string(3) "SMD" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } } 型号： NE4210S01复制状态：在售修改品牌： CEL复制封装：SMD 外壳：4-SMD 描述： HJ-FET 13DB S01	SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 671 ) LIMIT 1 晶体管类型：HFET 频率(Hz)：12GHz 增益(dB)：13dB 测试电压(V)：2V 额定电流(A)：15mA 输出功率(W)：- 额定电压(V)：4V	类别：高频-FET,MOS管丝印：(请登录) 料号：1040671 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(68) { ["id"]=> string(3) "672" ["pdf_add"]=> string(47) "http://www.cel.com/pdf/datasheets/NE3210S01.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(12) "NE3210S01-ND" ["zzsbh"]=> string(9) "NE3210S01" ["zddgs"]=> string(2) "70" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(19) "FET RF 4V 12GHZ S01" ["xl"]=> string(1) "-" ["zzs"]=> string(3) "CEL" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "CEL" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(4) "HFET" ["pl"]=> string(5) "12GHz" ["zy"]=> string(6) "13.5dB" ["dy_cs"]=> string(2) "2V" ["eddl"]=> string(4) "15mA" ["zsxs"]=> string(6) "0.35dB" ["dl_cs"]=> string(4) "10mA" ["gl_sc"]=> string(1) "-" ["dy_ed"]=> string(2) "4V" ["fz_wk"]=> string(5) "4-SMD" ["gysqjfz"]=> string(3) "SMD" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } } 型号： NE3210S01复制状态：在售修改品牌： CEL复制封装：SMD 外壳：4-SMD 描述： FET RF 4V 12GHZ S01	SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 672 ) LIMIT 1 晶体管类型：HFET 频率(Hz)：12GHz 增益(dB)：13.5dB 测试电压(V)：2V 额定电流(A)：15mA 输出功率(W)：- 额定电压(V)：4V	类别：高频-FET,MOS管丝印：(请登录) 料号：1040672 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车

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