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array(72) { ["id"]=> string(5) "46039" ["pdf_add"]=> string(48) "https://www.vishay.com/docs/77698/sidr870adp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "SIDR870ADP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(25) "MOSFET N-CH 100V 95A SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "95A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "6.6 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "80nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2866pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593820" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR870ADP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CH 100V 95A SO-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46039 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：95A（Tc）
Vgs(最大值)：±20V
功率-最大值：125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946039
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR870ADP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46054" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/77086/sidr608dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR608DP-T1-RE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(23) "MOSFET N-CH 45V PP SO-8" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "45V" ["dl_lxlj"]=> string(26) "51A（Ta），208A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.2 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "167nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(12) "8900pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593880" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR608DP-T1-RE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CH 45V PP SO-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46054 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：45V
电流-连续漏极(id)：51A（Ta），208A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946054
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR608DP-T1-RE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46055" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/77245/sidr668adp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "SIDR668ADP-T1-RE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(26) "MOSFET N-CH 100V PPAK SO-8" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(28) "23.3A（Ta），104A（Tc）" ["qddy"]=> string(10) "7.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "81nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3750pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593891" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR668ADP-T1-RE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CH 100V PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46055 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：23.3A（Ta），104A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946055
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR668ADP-T1-RE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46058" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "SIDR680ADP-T1-RE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(27) "N-CHANNEL 80-V (D-S) MOSFET" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(28) "30.7A（Ta），137A（Tc）" ["qddy"]=> string(10) "7.5V，10V" ["bt_id_vgs_rds"]=> string(23) "2.88 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "83nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4415pF @ 40V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593892" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR680ADP-T1-RE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： N-CHANNEL 80-V (D-S) MOSFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46058 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：30.7A（Ta），137A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946058
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR680ADP-T1-RE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46062" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/76606/sidr104adp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "SIDR104ADP-T1-RE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(32) "N-CHANNEL 100 V (D-S) MOSFET POW" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(27) "18.8A（Ta），81A（Tc）" ["qddy"]=> string(10) "7.5V，10V" ["bt_id_vgs_rds"]=> string(22) "6.1 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "70nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3250pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.4W（Ta），100W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593904" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR104ADP-T1-RE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： N-CHANNEL 100 V (D-S) MOSFET POW
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46062 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：18.8A（Ta），81A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.4W（Ta），100W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946062
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR104ADP-T1-RE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46065" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR170DP-T1-RE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(32) "N-CHANNEL 100 V (D-S) MOSFET POW" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(21) "23.2A (Ta)，95A (Tc)" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "140nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6195pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593915" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR170DP-T1-RE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： N-CHANNEL 100 V (D-S) MOSFET POW
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46065 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：23.2A (Ta)，95A (Tc)
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946065
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR170DP-T1-RE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46068" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/76351/sidr392dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR392DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(17) "MOSFET N-CHAN 30V" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "82A（Ta），100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.62 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "188nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(12) "9530pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593928" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR392DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CHAN 30V
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46068 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：82A（Ta），100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946068
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR392DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46073" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75748/sidr626dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR626DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(17) "MOSFET N-CHAN 60V" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(28) "42.8A（Ta），100A（Tc）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(22) "1.7 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "102nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5130pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593939" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR626DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CHAN 60V
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46073 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：42.8A（Ta），100A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946073
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR626DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46074" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75754/sidr680dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR680DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(15) "MOSFET N-CH 80V" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(22) "32.8A (Ta)，100A (Tc)" ["qddy"]=> string(10) "7.5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.9 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "105nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5150pF @ 40V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593951" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR680DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CH 80V
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46074 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：32.8A (Ta)，100A (Tc)
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946074
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR680DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46075" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75751/sidr668dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR668DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(16) "MOSFET N-CH 100V" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(21) "23.2A (Ta)，95A (Tc)" ["qddy"]=> string(10) "7.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "108nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5400pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593951" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR668DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CH 100V
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46075 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：23.2A (Ta)，95A (Tc)
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946075
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR668DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46076" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75951/sidr622dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR622DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(18) "MOSFET N-CHAN 150V" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(29) "64.6A（Ta），56.7A（Tc）" ["qddy"]=> string(10) "7.5V，10V" ["bt_id_vgs_rds"]=> string(23) "17.7 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "41nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1516pF @ 75V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593963" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR622DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CHAN 150V
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46076 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：64.6A（Ta），56.7A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946076
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR622DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46084" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75649/sidr610dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR610DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(30) "MOSFET N-CHAN 200V PPAK SO-8DC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(22) "8.9A (Ta)，39.6A (Tc)" ["qddy"]=> string(10) "7.5V，10V" ["bt_id_vgs_rds"]=> string(23) "31.9 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "38nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "1380pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607594012" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR610DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CHAN 200V PPAK SO-8DC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46084 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：8.9A (Ta)，39.6A (Tc)
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946084
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR610DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "47503" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75312/sidr638dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR638DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(25) "MOSFET N-CH 40V 100A SO-8" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.88 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "204nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(13) "10500pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607926723" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR638DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CH 40V 100A SO-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47503 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103947503
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR638DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "47553" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/76239/sidr140dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR140DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(29) "MOSFET N-CHAN 25V PPAK SO-8DC" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(20) "79A (Ta)，100A (Tc)" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.67 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "170nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(12) "8150pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607926965" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR140DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CHAN 25V PPAK SO-8DC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47553 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：79A (Ta)，100A (Tc)
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103947553
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR140DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "47555" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75636/sidr390dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR390DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(32) "MOSFET N-CHAN 30V POWERPAK SO-8D" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(28) "69.9A（Ta），100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "0.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "153nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(13) "10180pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607926967" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR390DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CHAN 30V POWERPAK SO-8D
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47555 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：69.9A（Ta），100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103947555
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR390DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "48531" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75636/sidr390dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR390DP-T1-RE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(31) "MOSFET N-CH 30V POWERPAK SO-8DC" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(28) "69.9A（Ta），100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "0.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "153nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(13) "10180pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607930870" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR390DP-T1-RE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CH 30V POWERPAK SO-8DC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48531 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：69.9A（Ta），100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103948531
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR390DP-T1-RE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "48571" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "SIDR626LDP-T1-RE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(32) "N-CHANNEL 60 V (D-S) MOSFET POWE" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(28) "45.6A（Ta），2.4A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.5 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "135nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5900pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607931043" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR626LDP-T1-RE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： N-CHANNEL 60 V (D-S) MOSFET POWE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48571 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：45.6A（Ta），2.4A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103948571
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR626LDP-T1-RE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "49995" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75606/sidr402dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR402DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(26) "MOSFET N-CHAN 40V PPSO-8DC" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(28) "64.6A（Ta），100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.88 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "165nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(12) "9100pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607934535" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR402DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： MOSFET N-CHAN 40V PPSO-8DC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49995 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：64.6A（Ta），100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103949995
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR402DP-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "50009" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/75639/sidr220dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SIDR220DP-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736998004" ["ms"]=> string(27) "N-CHANNEL 25-V (D-S) MOSFET" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(28) "87.7A（Ta），100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "200nC @ 10V" ["vgs_zdz"]=> string(11) "+16V，-12V" ["bt_vds_srdr"]=> string(12) "1085pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "6.25W（Ta），125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(15) "PowerPAK® SO-8" ["gysqjfz"]=> string(17) "PowerPAK® SO-8DC" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607934558" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIDR220DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述： N-CHANNEL 25-V (D-S) MOSFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50009 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：87.7A（Ta），100A（Tc）
Vgs(最大值)：+16V，-12V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103950009
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR220DP-T1-GE3' ) LIMIT 1

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