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array(74) { ["id"]=> string(4) "6219" ["pdf_add"]=> string(48) "http://www.vishay.com/docs/91773/sihh14n65ef.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Photos/Vishay_Siliconix_Photos/MFG_PowerPAK8x8.JPG" ["images_dir"]=> string(0) "" ["ljbh"]=> string(23) "SIHH14N65EF-T1-GE3TR-ND" ["zzsbh"]=> string(18) "SIHH14N65EF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CHAN 650V 15A POWERPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "15A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "271毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "98nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1749pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "156W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH14N65EF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CHAN 650V 15A POWERPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6219 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：15A（Tc）
Vgs(最大值)：±30V
功率-最大值：156W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10396219
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH14N65EF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "6259" ["pdf_add"]=> string(48) "http://www.vishay.com/docs/91739/sihh21n65ef.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(23) "SIHH21N65EF-T1-GE3TR-ND" ["zzsbh"]=> string(18) "SIHH21N65EF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 19.8A POWERPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(13) "19.8A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "180 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "102nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2396pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "156W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH21N65EF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 650V 19.8A POWERPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6259 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：19.8A（Tc）
Vgs(最大值)：±30V
功率-最大值：156W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10396259
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH21N65EF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "20204" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/91586/sihh11n65e.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Photos/Vishay_Siliconix_Photos/MFG_PowerPAK8x8.JPG" ["images_dir"]=> string(0) "" ["ljbh"]=> string(22) "SIHH11N65E-T1-GE3TR-ND" ["zzsbh"]=> string(17) "SIHH11N65E-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CHAN 650V 12A POWERPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "363毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "68nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1257pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "130W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH11N65E-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CHAN 650V 12A POWERPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20204 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：±30V
功率-最大值：130W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920204
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH11N65E-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "20208" ["pdf_add"]=> string(48) "http://www.vishay.com/docs/91786/sihh11n65ef.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Photos/Vishay_Siliconix_Photos/MFG_PowerPAK8x8.JPG" ["images_dir"]=> string(0) "" ["ljbh"]=> string(23) "SIHH11N65EF-T1-GE3TR-ND" ["zzsbh"]=> string(18) "SIHH11N65EF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CHAN 600V 24A POWERPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "11A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "382毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "70nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1243pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "130W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH11N65EF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CHAN 600V 24A POWERPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20208 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：11A（Tc）
Vgs(最大值)：±30V
功率-最大值：130W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920208
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH11N65EF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "20216" ["pdf_add"]=> string(48) "http://www.vishay.com/docs/91778/sihh14n60ef.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(23) "SIHH14N60EF-T1-GE3TR-ND" ["zzsbh"]=> string(18) "SIHH14N60EF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 15A POWERPAK8X8" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "15A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "266 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "84nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1449pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "147W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH14N60EF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 600V 15A POWERPAK8X8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20216 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：15A（Tc）
Vgs(最大值)：±30V
功率-最大值：147W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920216
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH14N60EF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "20233" ["pdf_add"]=> string(48) "http://www.vishay.com/docs/91744/sihh21n60ef.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Photos/Vishay_Siliconix_Photos/MFG_PowerPAK8x8.JPG" ["images_dir"]=> string(0) "" ["ljbh"]=> string(23) "SIHH21N60EF-T1-GE3TR-ND" ["zzsbh"]=> string(18) "SIHH21N60EF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CHAN 600V 19A POWERPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "185 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "86nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2035pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "174W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH21N60EF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CHAN 600V 19A POWERPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20233 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：19A（Tc）
Vgs(最大值)：±30V
功率-最大值：174W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920233
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH21N60EF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "20241" ["pdf_add"]=> string(48) "http://www.vishay.com/docs/91777/sihh26n60ef.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Photos/Vishay_Siliconix_Photos/MFG_PowerPAK8x8.JPG" ["images_dir"]=> string(0) "" ["ljbh"]=> string(23) "SIHH26N60EF-T1-GE3TR-ND" ["zzsbh"]=> string(18) "SIHH26N60EF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CHAN 600V 24A POWERPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "24A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "141毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "120nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2744pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "202W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH26N60EF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CHAN 600V 24A POWERPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20241 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：24A（Tc）
Vgs(最大值)：±30V
功率-最大值：202W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920241
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH26N60EF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "20244" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/91784/sihh24n65e.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Photos/Vishay_Siliconix_Photos/MFG_PowerPAK8x8.JPG" ["images_dir"]=> string(0) "" ["ljbh"]=> string(22) "SIHH24N65E-T1-GE3TR-ND" ["zzsbh"]=> string(17) "SIHH24N65E-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CHAN 650V 23A POWERPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "23A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "150 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "116nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2814pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "202W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH24N65E-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CHAN 650V 23A POWERPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20244 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：23A（Tc）
Vgs(最大值)：±30V
功率-最大值：202W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920244
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH24N65E-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "20253" ["pdf_add"]=> string(48) "http://www.vishay.com/docs/91783/sihh24n65ef.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Photos/Vishay_Siliconix_Photos/MFG_PowerPAK8x8.JPG" ["images_dir"]=> string(0) "" ["ljbh"]=> string(23) "SIHH24N65EF-T1-GE3TR-ND" ["zzsbh"]=> string(18) "SIHH24N65EF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CHAN 650V 23A POWERPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "23A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "158 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "17nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2780pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "202W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH24N65EF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CHAN 650V 23A POWERPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20253 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：23A（Tc）
Vgs(最大值)：±30V
功率-最大值：202W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920253
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH24N65EF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "32748" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/91578/sihh26n60e.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(22) "SIHH26N60E-T1-GE3TR-ND" ["zzsbh"]=> string(17) "SIHH26N60E-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 25A POWERPAK8X8" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "25A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "135 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "116nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2815pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "202W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH26N60E-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 600V 25A POWERPAK8X8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32748 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：25A（Tc）
Vgs(最大值)：±30V
功率-最大值：202W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932748
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH26N60E-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "35190" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/91651/sihh11n60e.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(22) "SIHH11N60E-T1-GE3TR-ND" ["zzsbh"]=> string(17) "SIHH11N60E-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 11A POWERPAK8X8" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "11A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "339 毫欧 @ 5.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "62nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1076pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "114W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH11N60E-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 600V 11A POWERPAK8X8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35190 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：11A（Tc）
Vgs(最大值)：±30V
功率-最大值：114W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103935190
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH11N60E-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "35233" ["pdf_add"]=> string(48) "http://www.vishay.com/docs/91726/sihh11n60ef.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(23) "SIHH11N60EF-T1-GE3TR-ND" ["zzsbh"]=> string(18) "SIHH11N60EF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 11A POWERPAK8X8" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "11A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "357 毫欧 @ 5.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "62nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1078pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "114W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH11N60EF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 600V 11A POWERPAK8X8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35233 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：11A（Tc）
Vgs(最大值)：±30V
功率-最大值：114W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103935233
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH11N60EF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "35249" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/91584/sihh21n60e.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(22) "SIHH21N60E-T1-GE3TR-ND" ["zzsbh"]=> string(17) "SIHH21N60E-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 20A POWERPAK8X8" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "20A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "176 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "83nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2015pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH21N60E-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 600V 20A POWERPAK8X8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35249 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：20A（Tc）
Vgs(最大值)：±30V
功率-最大值：104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103935249
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH21N60E-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "35265" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/91730/sihh14n65e.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(22) "SIHH14N65E-T1-GE3TR-ND" ["zzsbh"]=> string(17) "SIHH14N65E-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 15A PWRPAK 8X8" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "15A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "260 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "96nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1712pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "156W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH14N65E-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 650V 15A PWRPAK 8X8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35265 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：15A（Tc）
Vgs(最大值)：±30V
功率-最大值：156W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103935265
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH14N65E-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "35302" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/91738/sihh21n65e.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(22) "SIHH21N65E-T1-GE3TR-ND" ["zzsbh"]=> string(17) "SIHH21N65E-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 650V 20.3A PWRPAK8X8" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(13) "20.3A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "170 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "99nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2404pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "156W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH21N65E-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 650V 20.3A PWRPAK8X8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35302 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：20.3A（Tc）
Vgs(最大值)：±30V
功率-最大值：156W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103935302
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH21N65E-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "47581" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/68443/sqjq100el.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(84) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_742;-6026-Single;-;-4.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SQJQ100EL-T1_GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 40V 200A POWERPAK8" ["xl"]=> string(33) "Automotive, AEC-Q101, TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "200A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.2 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "220nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "14500pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "150W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607927090" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SQJQ100EL-T1_GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 40V 200A POWERPAK8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47581 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：200A（Tc）
Vgs(最大值)：±20V
功率-最大值：150W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947581
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJQ100EL-T1_GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "35909" ["pdf_add"]=> string(47) "http://www.vishay.com/docs/91650/sihh14n60e.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(22) "SIHH14N60E-T1-GE3TR-ND" ["zzsbh"]=> string(17) "SIHH14N60E-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 16A POWERPAK8X8" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "16A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "255 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "82nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1416pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "147W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHH14N60E-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CH 600V 16A POWERPAK8X8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35909 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：16A（Tc）
Vgs(最大值)：±30V
功率-最大值：147W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103935909
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH14N60E-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "46047" ["pdf_add"]=> string(1) "-" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SQJQ148E-T1_GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "AUTOMOTIVE N-CHANNEL 40 V (D-S)" ["xl"]=> string(40) "Automotive, AEC-Q101, TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "375A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "1.6 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "86nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4930pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "325W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(16) "PowerPAK® 8 x 8" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593845" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SQJQ148E-T1_GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：PowerPAK® 8 x 8
描述： AUTOMOTIVE N-CHANNEL 40 V (D-S)
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46047 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：375A（Tc）
Vgs(最大值)：±20V
功率-最大值：325W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103946047
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJQ148E-T1_GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "46051" ["pdf_add"]=> string(1) "-" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SQJQ142E-T1_GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "AUTOMOTIVE N-CHANNEL 40 V (D-S)" ["xl"]=> string(40) "Automotive, AEC-Q101, TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "460A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "1.24 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "130nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6975pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "500W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(16) "PowerPAK® 8 x 8" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593867" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SQJQ142E-T1_GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：PowerPAK® 8 x 8
描述： AUTOMOTIVE N-CHANNEL 40 V (D-S)
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46051 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：460A（Tc）
Vgs(最大值)：±20V
功率-最大值：500W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103946051
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJQ142E-T1_GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "46071" ["pdf_add"]=> string(46) "https://www.vishay.com/docs/76718/sqjq480e.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(84) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_742;-6026-Single;-;-4.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SQJQ480E-T1_GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CHAN 80V POWERPAK 8X8L" ["xl"]=> string(33) "Automotive, AEC-Q101, TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "150A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "3 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "144nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "8625pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "136W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(16) "PowerPAK® 8 x 8" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593939" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SQJQ480E-T1_GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述： MOSFET N-CHAN 80V POWERPAK 8X8L
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46071 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：150A（Tc）
Vgs(最大值)：±20V
功率-最大值：136W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103946071
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJQ480E-T1_GE3' ) LIMIT 1

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