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array(72) { ["id"]=> string(5) "45770" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/79330/sish108dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH108DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(32) "MOSFET N-CHAN 20 V POWERPAK 1212" ["xl"]=> string(18) "TrenchFET® Gen II" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "14A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.9 毫欧 @ 22A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "30nC @ 4.5V" ["vgs_zdz"]=> string(5) "±16V" ["bt_vds_srdr"]=> string(5) "±16V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607592681" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH108DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CHAN 20 V POWERPAK 1212
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45770 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：14A（Ta）
Vgs(最大值)：±16V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945770
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH108DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45817" ["pdf_add"]=> string(48) "https://www.vishay.com/docs/79563/sish615adn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "SISH615ADN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(32) "MOSFET P-CHAN 20 V POWERPAK 1212" ["xl"]=> string(19) "TrenchFET® Gen III" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(29) "22，1A（Ta），35A（Tc）" ["qddy"]=> string(10) "2.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.4 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "183nC @ 10V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "5590pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.7W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607592875" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH615ADN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET P-CHAN 20 V POWERPAK 1212
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45817 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：22，1A（Ta），35A（Tc）
Vgs(最大值)：±12V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945817
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH615ADN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45822" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/79568/sish625dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH625DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(32) "MOSFET P-CHAN 30 V POWERPAK 1212" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(29) "17，3A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "7 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "126nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4427pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.7W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607592922" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH625DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET P-CHAN 30 V POWERPAK 1212
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45822 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：17，3A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945822
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH625DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45828" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75708/sisha14dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISHA14DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(25) "MOSFET N-CH 30V PP 1212-8" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(27) "19.7A（Ta），20A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.1 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "29nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(12) "1450pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(29) "3.57W（Ta），26.5W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607592934" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISHA14DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CH 30V PP 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45828 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：19.7A（Ta），20A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：3.57W（Ta），26.5W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945828
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISHA14DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45831" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75656/sish472dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH472DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(29) "MOSFET N-CH 30V POWERPAK 1212" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "15A（Ta），20A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.9 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "30nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "997pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.5W（Ta），28W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607592946" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH472DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CH 30V POWERPAK 1212
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45831 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta），20A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.5W（Ta），28W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945831
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH472DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45844" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75172/sish114ad.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "SISH114ADN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(29) "MOSFET N-CH 30V POWERPAK 1212" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "18A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.5 毫欧 @ 18A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "32nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1230pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.7W（Ta），39W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593020" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH114ADN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CH 30V POWERPAK 1212
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45844 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.7W（Ta），39W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945844
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH114ADN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45851" ["pdf_add"]=> string(48) "https://www.vishay.com/docs/75685/sisha12adn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "SISHA12ADN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(25) "MOSFET N-CH 30V PP 1212-8" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "22A（Ta），25A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.3 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(12) "2070pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.5W（Ta），28W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593091" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISHA12ADN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CH 30V PP 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45851 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta），25A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：3.5W（Ta），28W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945851
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISHA12ADN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45872" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75900/sish617dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(78) "https://media.digikey.com/renders/Vishay%20Siliconix%20Renders/742;6008;;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH617DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(32) "MOSFET P-CHAN 30V POWERPAK 1212-" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(27) "13.9A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(25) "12.3 毫欧 @ 13.9A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "59nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "1800pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.7W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593189" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH617DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET P-CHAN 30V POWERPAK 1212-
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45872 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13.9A（Ta），35A（Tc）
Vgs(最大值)：±25V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945872
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH617DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45891" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/76879/sisha04dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISHA04DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(25) "MOSFET N-CH 30V PP 1212-8" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(27) "30.9A（Ta），40A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "2.15 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "77nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(12) "3595pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.7W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593265" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISHA04DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CH 30V PP 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45891 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：30.9A（Ta），40A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945891
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISHA04DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45915" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/79280/sish410dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(86) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;PowerPAK1212-8SH;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH410DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(27) "MOSFET N-CHAN PPAK 1212-8SH" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "22A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "41nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1600pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593362" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH410DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CHAN PPAK 1212-8SH
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45915 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：22A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945915
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH410DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45972" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/79345/sish112dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH112DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(29) "MOSFET N-CH 30V PPAK 1212-8SH" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(13) "11.3A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "7.5 毫欧 @ 17.8A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "27nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "2610pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Tc）" ["gzwd"]=> string(23) "-50°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593555" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH112DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CH 30V PPAK 1212-8SH
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45972 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11.3A（Tc）
Vgs(最大值)：±12V
功率-最大值：1.5W（Tc）
工作温度：-50°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945972
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH112DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "45982" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/79230/sish110dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH110DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(29) "MOSFET N-CH 20V PPAK 1212-8SH" ["xl"]=> string(18) "TrenchFET® Gen II" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(13) "13.5A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "5.3 毫欧 @ 21.1A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "21nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593580" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH110DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CH 20V PPAK 1212-8SH
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45982 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：13.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945982
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH110DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46013" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/79358/sish106dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(86) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;PowerPAK1212-8SH;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH106DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(27) "MOSFET N-CHAN PPAK 1212-8SH" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(13) "12.5A（Ta）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(25) "6.2 毫欧 @ 19.5A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "27nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(5) "±12V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593677" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH106DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CHAN PPAK 1212-8SH
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46013 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：12.5A（Ta）
Vgs(最大值)：±12V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946013
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH106DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46020" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/79240/sish116dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH116DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(29) "MOSFET N-CH 40V PPAK 1212-8SH" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(13) "10.5A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "7.8 毫欧 @ 16.4A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "23nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593724" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH116DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CH 40V PPAK 1212-8SH
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46020 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：10.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946020
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH116DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46984" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/77305/sish101dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH101DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(29) "MOSFET P-CH 30V POWERPAK 1212" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(27) "16.9A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.2 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "102nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "3595pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.7W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607651989" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH101DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET P-CH 30V POWERPAK 1212
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46984 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16.9A（Ta），35A（Tc）
Vgs(最大值)：±25V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946984
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH101DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "47039" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75341/sish407dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH407DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(29) "MOSFET P-CH 20V POWERPAK 1212" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(27) "15.4A（Ta），25A（Tc）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(25) "9.5 毫欧 @ 15.3A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "93.8nC @ 8V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(12) "2760pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.6W（Ta），33W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607652230" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH407DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET P-CH 20V POWERPAK 1212
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47039 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：15.4A（Ta），25A（Tc）
Vgs(最大值)：±8V
功率-最大值：3.6W（Ta），33W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103947039
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH407DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "47207" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/79242/sish434dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(86) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;PowerPAK1212-8SH;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH434DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(31) "MOSFET N-CHAN 40V PPAK 1212-8SH" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(27) "17.6A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "7.6 毫欧 @ 16.2A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "40nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1530pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607925059" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH434DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CHAN 40V PPAK 1212-8SH
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47207 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：17.6A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103947207
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH434DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "49728" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/76822/sisha10dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISHA10DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(25) "MOSFET N-CH 30V PP 1212-8" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "25A（Ta），30A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.7 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "51nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(12) "2425pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.6W（Ta），39W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607934138" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISHA10DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CH 30V PP 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49728 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：25A（Ta），30A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：3.6W（Ta），39W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103949728
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISHA10DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "49772" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75903/sish129dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(78) "https://media.digikey.com/renders/Vishay%20Siliconix%20Renders/742;6008;;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH129DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(32) "MOSFET P-CHAN 30V POWERPAK 1212-" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(27) "14.4A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(25) "11.4 毫欧 @ 14.4A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.8V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "71nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3345pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "3.8W（Ta），52.1W（Tc）" ["gzwd"]=> string(23) "-50°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607934180" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH129DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET P-CHAN 30V POWERPAK 1212-
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49772 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：14.4A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52.1W（Tc）
工作温度：-50°C ~ 150°C（TJ）
丝印：(请登录)
料号：103949772
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH129DN-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "49779" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/75897/sish402dn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(78) "https://media.digikey.com/renders/Vishay%20Siliconix%20Renders/742;6008;;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SISH402DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1736997689" ["ms"]=> string(32) "MOSFET N-CHAN 30V POWERPAK 1212-" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "19A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "6 毫欧 @ 19A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "42nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1700pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "PowerPAK® 1212-8SH" ["gysqjfz"]=> string(19) "PowerPAK® 1212-8SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607934193" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISH402DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述： MOSFET N-CHAN 30V POWERPAK 1212-
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49779 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：19A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103949779
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH402DN-T1-GE3' ) LIMIT 1

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