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array(71) { ["id"]=> string(4) "3571" ["pdf_add"]=> string(46) "https://www.vishay.com/docs/75573/sisf00dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(107) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/766/MFG_742%3B-PowerPAK-1212-8SCD-Dual%3B-%3B-8.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SISF00DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "4.639630" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992565" ["ms"]=> string(32) "MOSFET DUAL N-CH 30V POWERPAK 12" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共漏" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "60A（Tc）" ["bt_id_vgs_rds"]=> string(20) "5 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "53nC @ 10V" ["bt_vds_srdr"]=> string(12) "2700pF @ 15V" ["gn_zdz"]=> string(13) "69.4W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "PowerPAK® 1212-8SCD" ["gysqjfz"]=> string(20) "PowerPAK® 1212-8SCD" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597905279" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SISF00DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SCD
外壳：PowerPAK® 1212-8SCD
描述： MOSFET DUAL N-CH 30V POWERPAK 12
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3571 ) LIMIT 1
Fet类型：2 N 沟道（双）共漏
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：60A（Tc）
最大功率值：69.4W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413571
10+: ￥7.04
3000+: ￥5.42 array(5) { ["count"]=> string(1) "0" ["gys_id"]=> NULL ["zzsbh"]=> NULL ["price"]=> NULL ["show_price"]=> NULL }
起订量:10 修改
包装量: 3000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISF00DN-T1-GE3' ) LIMIT 1
array(71) { ["id"]=> string(4) "3570" ["pdf_add"]=> string(46) "https://www.vishay.com/docs/77230/sisf04dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2131/742%3B5882-Dual%3BDN%3B8.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SISF04DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "4.279800" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992565" ["ms"]=> string(32) "MOSFET DUAL N-CH 30V PPAK 1212-8" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共漏" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "30A（Ta），108A（Tc）" ["bt_id_vgs_rds"]=> string(19) "4 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "60nC @ 10V" ["bt_vds_srdr"]=> string(12) "2600pF @ 15V" ["gn_zdz"]=> string(28) "5.2W（Ta），69.4W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "PowerPAK® 1212-8SCD" ["gysqjfz"]=> string(20) "PowerPAK® 1212-8SCD" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597905271" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SISF04DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SCD
外壳：PowerPAK® 1212-8SCD
描述： MOSFET DUAL N-CH 30V PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3570 ) LIMIT 1
Fet类型：2 N 沟道（双）共漏
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：30A（Ta），108A（Tc）
最大功率值：5.2W（Ta），69.4W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413570
10+: ￥6.50
3000+: ￥5.00 array(5) { ["count"]=> string(1) "0" ["gys_id"]=> NULL ["zzsbh"]=> NULL ["price"]=> NULL ["show_price"]=> NULL }
起订量:10 修改
包装量: 3000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISF04DN-T1-GE3' ) LIMIT 1
array(71) { ["id"]=> string(4) "3682" ["pdf_add"]=> string(75) "https://www.waldom.com/upload/parts/datasheets/mf-tf/tf-sisf20dn-t1-ge3.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(107) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/766/MFG_742%3B-PowerPAK-1212-8SCD-Dual%3B-%3B-8.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SISF20DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "6.567740" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992565" ["ms"]=> string(32) "MOSFET DL N-CH 60V PPK 1212-8SCD" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(25) "14A（Ta），52A（Tc）" ["bt_id_vgs_rds"]=> string(20) "13 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "33nC @ 10V" ["bt_vds_srdr"]=> string(12) "1290pF @ 30V" ["gn_zdz"]=> string(28) "5.2W（Ta），69.4W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "PowerPAK® 1212-8SCD" ["gysqjfz"]=> string(20) "PowerPAK® 1212-8SCD" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597906402" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SISF20DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SCD
外壳：PowerPAK® 1212-8SCD
描述： MOSFET DL N-CH 60V PPK 1212-8SCD
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3682 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：60V
电流-连续漏极(id)：14A（Ta），52A（Tc）
最大功率值：5.2W（Ta），69.4W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413682
10+: ￥9.97
3000+: ￥7.67 array(5) { ["count"]=> string(1) "0" ["gys_id"]=> NULL ["zzsbh"]=> NULL ["price"]=> NULL ["show_price"]=> NULL }
起订量:10 修改
包装量: 3000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISF20DN-T1-GE3' ) LIMIT 1
array(71) { ["id"]=> string(4) "3888" ["pdf_add"]=> string(46) "https://www.vishay.com/docs/77407/sisf06dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2131/742%3B5882-Dual%3BDN%3B8.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SISF06DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.522790" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992565" ["ms"]=> string(32) "COMMON-DRAIN DUAL N-CH 30V (S1-S" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共漏" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "28A（Ta），101A（Tc）" ["bt_id_vgs_rds"]=> string(21) "4.5 欧姆 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["bt_vds_srdr"]=> string(12) "2050pF @ 15V" ["gn_zdz"]=> string(28) "5.2W（Ta），69.4W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "PowerPAK® 1212-8SCD" ["gysqjfz"]=> string(20) "PowerPAK® 1212-8SCD" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597906764" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SISF06DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SCD
外壳：PowerPAK® 1212-8SCD
描述： COMMON-DRAIN DUAL N-CH 30V (S1-S
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3888 ) LIMIT 1
Fet类型：2 N 沟道（双）共漏
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：28A（Ta），101A（Tc）
最大功率值：5.2W（Ta），69.4W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413888
10+: ￥5.35
3000+: ￥4.11 array(5) { ["count"]=> string(1) "0" ["gys_id"]=> NULL ["zzsbh"]=> NULL ["price"]=> NULL ["show_price"]=> NULL }
起订量:10 修改
包装量: 3000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISF06DN-T1-GE3' ) LIMIT 1
array(71) { ["id"]=> string(4) "3909" ["pdf_add"]=> string(75) "https://www.waldom.com/upload/parts/datasheets/mf-tf/tf-sisf02dn-t1-ge3.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2131/742%3B5882-Dual%3BDN%3B8.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SISF02DN-T1-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "4.866380" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992565" ["ms"]=> string(27) "MOSFET DUAL N-CH 25V 1212-8" ["xl"]=> string(18) "TrenchFET® Gen IV" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共漏" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(27) "30.5A（Ta），60A（Tc）" ["bt_id_vgs_rds"]=> string(21) "3.5 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "56nC @ 10V" ["bt_vds_srdr"]=> string(12) "2650pF @ 10V" ["gn_zdz"]=> string(28) "5.2W（Ta），69.4W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "PowerPAK® 1212-8SCD" ["gysqjfz"]=> string(20) "PowerPAK® 1212-8SCD" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597906787" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SISF02DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8SCD
外壳：PowerPAK® 1212-8SCD
描述： MOSFET DUAL N-CH 25V 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3909 ) LIMIT 1
Fet类型：2 N 沟道（双）共漏
Fet功能：标准
漏源极电压(vdss)：25V
电流-连续漏极(id)：30.5A（Ta），60A（Tc）
最大功率值：5.2W（Ta），69.4W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413909
10+: ￥7.39
3000+: ￥5.68 array(5) { ["count"]=> string(1) "0" ["gys_id"]=> NULL ["zzsbh"]=> NULL ["price"]=> NULL ["show_price"]=> NULL }
起订量:10 修改
包装量: 3000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISF02DN-T1-GE3' ) LIMIT 1

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