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array(74) { ["id"]=> string(4) "5160" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/73306/73306.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "SI7302DN-T1-E3-ND" ["zzsbh"]=> string(14) "SI7302DN-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 220V 8.4A 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "220V" ["dl_lxlj"]=> string(12) "8.4A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "320 毫欧 @ 2.3A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "21nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "645pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7302DN-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 220V 8.4A 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5160 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：220V
电流-连续漏极(id)：8.4A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395160
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7302DN-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5602" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73039/si7114dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SI7114DN-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7114DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 11.7A 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(13) "11.7A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "7.5 毫欧 @ 18.3A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "19nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7114DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 30V 11.7A 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5602 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11.7A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395602
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7114DN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5609" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/71429/si7703edn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SI7703EDN-T1-E3TR-ND" ["zzsbh"]=> string(15) "SI7703EDN-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 20V 4.3A 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "4.3A（Ta）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(23) "48 毫欧 @ 6.3A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 800µA" ["bt_vgs_sjdh"]=> string(11) "18nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(5) "±12V" ["fetgn"]=> string(33) "肖特基二极管（隔离式）" ["gn_zdz"]=> string(12) "1.3W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7703EDN-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET P-CH 20V 4.3A 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5609 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：4.3A（Ta）
Vgs(最大值)：±12V
功率-最大值：1.3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395609
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7703EDN-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5613" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74396/si7230dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "SI7230DN-T1-E3-ND" ["zzsbh"]=> string(14) "SI7230DN-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 9A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "9A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "12 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "20nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7230DN-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 30V 9A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5613 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：9A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395613
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7230DN-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5614" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74396/si7230dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI7230DN-T1-GE3-ND" ["zzsbh"]=> string(15) "SI7230DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 9A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "9A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "12 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "20nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7230DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 30V 9A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5614 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：9A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395614
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7230DN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5615" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72416/72416.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI7421DN-T1-GE3-ND" ["zzsbh"]=> string(15) "SI7421DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET P-CH 30V 6.4A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "6.4A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "25 毫欧 @ 9.8A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "40nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7421DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET P-CH 30V 6.4A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5615 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：6.4A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395615
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7421DN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5616" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72995/72995.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SI7806ADN-T1-GE3-ND" ["zzsbh"]=> string(16) "SI7806ADN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 9A 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "9A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "11 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "20nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7806ADN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 30V 9A 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5616 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：9A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395616
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7806ADN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5768" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72582/72582.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI7423DN-T1-GE3-ND" ["zzsbh"]=> string(15) "SI7423DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET P-CH 30V 7.4A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "7.4A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "18 毫欧 @ 11.7A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "56nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7423DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET P-CH 30V 7.4A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5768 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：7.4A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395768
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7423DN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5891" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/69638/si7322dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "SI7322DN-T1-E3-ND" ["zzsbh"]=> string(14) "SI7322DN-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 100V 18A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "18A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "58 毫欧 @ 5.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "20nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "750pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7322DN-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 100V 18A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5891 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：18A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395891
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7322DN-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5983" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73785/si7100dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SI7100DN-T1-E3TR-ND" ["zzsbh"]=> string(14) "SI7100DN-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 8V 35A 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(2) "8V" ["dl_lxlj"]=> string(11) "35A（Tc）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "3.5 毫欧 @ 15A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "105nC @ 8V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "3810pF @ 4V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-50°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7100DN-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 8V 35A 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5983 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：8V
电流-连续漏极(id)：35A（Tc）
Vgs(最大值)：±8V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-50°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395983
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7100DN-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(4) "6757" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/63234/63234.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "SISA12ADN-T1-GE3TR-ND" ["zzsbh"]=> string(16) "SISA12ADN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 25A 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "25A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.3 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(11) "+20V，-16V" ["bt_vds_srdr"]=> string(12) "2070pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.5W（Ta），28W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SISA12ADN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 30V 25A 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6757 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：25A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：3.5W（Ta），28W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10396757
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISA12ADN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "6787" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/69025/sis430dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SIS430DN-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SIS430DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 25V 35A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(11) "35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.1 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "40nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(14) "1600pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIS430DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 25V 35A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6787 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10396787
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIS430DN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7033" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73785/si7100dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI7100DN-T1-GE3-ND" ["zzsbh"]=> string(15) "SI7100DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 8V 35A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(2) "8V" ["dl_lxlj"]=> string(11) "35A（Tc）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "3.5 毫欧 @ 15A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "105nC @ 8V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "3810pF @ 4V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-50°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7100DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 8V 35A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7033 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：8V
电流-连续漏极(id)：35A（Tc）
Vgs(最大值)：±8V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-50°C ~ 150°C（TJ）
丝印：(请登录)
料号：10397033
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7100DN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7101" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74250/si7102dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "SI7102DN-T1-E3-ND" ["zzsbh"]=> string(14) "SI7102DN-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 12V 35A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(11) "35A（Tc）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "3.8 毫欧 @ 15A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "110nC @ 8V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "3720pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-50°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7102DN-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 12V 35A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7101 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：12V
电流-连续漏极(id)：35A（Tc）
Vgs(最大值)：±8V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-50°C ~ 150°C（TJ）
丝印：(请登录)
料号：10397101
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7102DN-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7162" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/68787/si7720dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SI7720DN-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7720DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 12A 1212-8" ["xl"]=> string(21) "SkyFET®, TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "12.5 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1790pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-50°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7720DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 30V 12A 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7162 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-50°C ~ 150°C（TJ）
丝印：(请登录)
料号：10397162
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7720DN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7279" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73960/si7328dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SI7328DN-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7328DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 35A 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "6.6 毫欧 @ 18.9A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "31.5nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "2610pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.78W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-50°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7328DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 30V 35A 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7279 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：35A（Tc）
Vgs(最大值)：±12V
功率-最大值：3.78W（Ta），52W（Tc）
工作温度：-50°C ~ 150°C（TJ）
丝印：(请登录)
料号：10397279
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7328DN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7280" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73143/si7110dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SI7110DN-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7110DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 20V 13.5A 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(13) "13.5A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "5.3 毫欧 @ 21.1A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "21nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7110DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 20V 13.5A 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7280 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：13.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10397280
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7110DN-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7283" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73406/si7104dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "SI7104DN-T1-E3-ND" ["zzsbh"]=> string(14) "SI7104DN-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 12V 35A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(11) "35A（Tc）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(25) "3.7 毫欧 @ 26.1A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.8V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "70nC @ 10V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(11) "2800pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7104DN-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 12V 35A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7283 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：12V
电流-连续漏极(id)：35A（Tc）
Vgs(最大值)：±12V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10397283
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7104DN-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7284" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73960/si7328dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "SI7328DN-T1-E3-ND" ["zzsbh"]=> string(14) "SI7328DN-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 30V 35A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "6.6 毫欧 @ 18.9A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "31.5nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "2610pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.78W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-50°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7328DN-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 30V 35A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7284 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：35A（Tc）
Vgs(最大值)：±12V
功率-最大值：3.78W（Ta），52W（Tc）
工作温度：-50°C ~ 150°C（TJ）
丝印：(请登录)
料号：10397284
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7328DN-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7359" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73406/si7104dn.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205882.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5882.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI7104DN-T1-GE3-ND" ["zzsbh"]=> string(15) "SI7104DN-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 12V 35A PPAK 1212-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(11) "35A（Tc）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(25) "3.7 毫欧 @ 26.1A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.8V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "70nC @ 10V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(11) "2800pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(17) "PowerPAK® 1212-8" ["gysqjfz"]=> string(17) "PowerPAK® 1212-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI7104DN-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：PowerPAK® 1212-8
外壳：PowerPAK® 1212-8
描述： MOSFET N-CH 12V 35A PPAK 1212-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7359 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：12V
电流-连续漏极(id)：35A（Tc）
Vgs(最大值)：±12V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10397359
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7104DN-T1-GE3' ) LIMIT 1

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