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array(72) { ["id"]=> string(4) "6107" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(14) "STL12HN65M2-ND" ["zzsbh"]=> string(11) "STL12HN65M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(12) "POWER MOSFET" ["xl"]=> string(1) "*" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(1) "-" ["js"]=> string(1) "-" ["ldjdy"]=> string(1) "-" ["dl_lxlj"]=> string(1) "-" ["qddy"]=> string(1) "-" ["bt_id_vgs_rds"]=> string(1) "-" ["bt_id_vgs_zdz"]=> string(1) "-" ["bt_vgs_sjdh"]=> string(1) "-" ["vgs_zdz"]=> string(1) "-" ["bt_vds_srdr"]=> string(1) "-" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL12HN65M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： POWER MOSFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6107 ) LIMIT 1
Fet类型：-
漏源极电压(vdss)：-
电流-连续漏极(id)：-
Vgs(最大值)：-
功率-最大值：-
工作温度：-
丝印：(请登录)
料号：10396107
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL12HN65M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "20019" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00148686.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["ljbh"]=> string(14) "497-16003-2-ND" ["zzsbh"]=> string(10) "STL16N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 600V 8A POWERFLAT" ["xl"]=> string(12) "MDmesh™ M2" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "8A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "355 毫欧 @ 4A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "19nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "704pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "52W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL16N60M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 600V 8A POWERFLAT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20019 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：8A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103920019
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL16N60M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "25240" ["pdf_add"]=> string(84) "//media.digikey.com/pdf/Data%20Sheets/ST%20Microelectronics%20PDFS/STL15N60M2-EP.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["ljbh"]=> string(14) "497-15912-2-ND" ["zzsbh"]=> string(13) "STL15N60M2-EP" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 600V 7A PWRFLAT HV" ["xl"]=> string(15) "MDmesh™ M2-EP" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "7A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "418 毫欧 @ 4.5A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "17nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "590pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "55W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL15N60M2-EP复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 600V 7A PWRFLAT HV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25240 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±25V
功率-最大值：55W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925240
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL15N60M2-EP' ) LIMIT 1
array(72) { ["id"]=> string(5) "47519" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "STL16N60M6" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "NCHANNEL 600V M6 POWER MOSFET" ["xl"]=> string(9) "MDmesh™" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(1) "-" ["js"]=> string(1) "-" ["ldjdy"]=> string(1) "-" ["dl_lxlj"]=> string(1) "-" ["qddy"]=> string(1) "-" ["bt_id_vgs_rds"]=> string(1) "-" ["bt_id_vgs_zdz"]=> string(1) "-" ["bt_vgs_sjdh"]=> string(1) "-" ["vgs_zdz"]=> string(1) "-" ["bt_vds_srdr"]=> string(1) "-" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "热销" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607926820" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL16N60M6复制
状态： 热销 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： NCHANNEL 600V M6 POWER MOSFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47519 ) LIMIT 1
Fet类型：-
漏源极电压(vdss)：-
电流-连续漏极(id)：-
Vgs(最大值)：-
功率-最大值：-
工作温度：-
丝印：(请登录)
料号：103947519
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL16N60M6' ) LIMIT 1
供应商:
库存:2K+
array(72) { ["id"]=> string(5) "30074" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00187264.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["ljbh"]=> string(14) "497-16039-2-ND" ["zzsbh"]=> string(10) "STL12N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 600V 6.5A POWERFLAT" ["xl"]=> string(12) "MDmesh™ M2" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "6.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "495 毫欧 @ 4.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "16nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "538pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL12N60M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 600V 6.5A POWERFLAT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30074 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：6.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103930074
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL12N60M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "30213" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/STL10N65M2.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/imagesmk/Photos/STMicro_Photos/STL10N65M2.jpg" ["ljbh"]=> string(14) "497-15052-2-ND" ["zzsbh"]=> string(10) "STL10N65M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 4.5A POWERFLAT" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(12) "4.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "1 欧姆 @ 2.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "10.3nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "315pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "48W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL10N65M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 650V 4.5A POWERFLAT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30213 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：4.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103930213
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL10N65M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "30216" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/64/c2/6a/e9/d0/1d/49/ad/DM00184556.pdf/files/DM00184556.pdf/jcr:content/translatio" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/3-PowerQFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/3-PowerQFN.jpg" ["ljbh"]=> string(14) "497-15054-2-ND" ["zzsbh"]=> string(10) "STL12N65M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 8.5A PWRFLAT56" ["xl"]=> string(9) "MDmesh™" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(10) "5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "750 毫欧 @ 3A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "12.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "410pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "48W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL12N65M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 650V 8.5A PWRFLAT56
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30216 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：5A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103930216
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL12N65M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "30368" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00098531.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["ljbh"]=> string(14) "497-14965-2-ND" ["zzsbh"]=> string(10) "STL10N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 600V 5.5A PWRFLAT56" ["xl"]=> string(17) "MDmesh™ II Plus" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "5.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "660 毫欧 @ 2.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "13.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "400pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "48W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL10N60M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 600V 5.5A PWRFLAT56
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30368 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：5.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103930368
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL10N60M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "30479" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00141948.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["ljbh"]=> string(14) "497-15259-2-ND" ["zzsbh"]=> string(10) "STL16N65M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 7.5A POWERFLAT" ["xl"]=> string(12) "MDmesh™ M2" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(12) "7.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "395 毫欧 @ 3.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "19.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "718pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "56W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL16N65M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 650V 7.5A POWERFLAT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30479 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：7.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：56W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103930479
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL16N65M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "32724" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00121840.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/STL120N8F7.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/STL120N8F7.jpg" ["ljbh"]=> string(14) "497-15146-2-ND" ["zzsbh"]=> string(10) "STL18N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 600V 9A POWERFLAT" ["xl"]=> string(17) "MDmesh™ II Plus" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "9A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "308 毫欧 @ 4.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "21.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "791pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "57W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL18N60M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 600V 9A POWERFLAT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32724 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：9A（Tc）
Vgs(最大值)：±25V
功率-最大值：57W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103932724
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL18N60M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "37519" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00152696.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["ljbh"]=> string(14) "497-15476-2-ND" ["zzsbh"]=> string(10) "STL13N65M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 6.5A POWERFLAT" ["xl"]=> string(12) "MDmesh™ M2" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(12) "6.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "475 毫欧 @ 3A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "17nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "590pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL13N65M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 650V 6.5A POWERFLAT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37519 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：6.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103937519
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL13N65M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "37779" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00110867.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["ljbh"]=> string(14) "497-15477-2-ND" ["zzsbh"]=> string(10) "STL18N65M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 650V 8A POWERFLAT" ["xl"]=> string(12) "MDmesh™ M2" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(10) "8A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "365 毫欧 @ 4A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "21.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "764pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "57W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL18N65M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 650V 8A POWERFLAT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37779 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：8A（Tc）
Vgs(最大值)：±25V
功率-最大值：57W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937779
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL18N65M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "37816" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00102384.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["ljbh"]=> string(14) "497-14970-2-ND" ["zzsbh"]=> string(9) "STL9N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 600V 4.8A PWRFLAT56" ["xl"]=> string(17) "MDmesh™ II Plus" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "4.8A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "860 毫欧 @ 2.4A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "10nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "320pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "48W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL9N60M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 600V 4.8A PWRFLAT56
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37816 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：4.8A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937816
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL9N60M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "37926" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00116759.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["ljbh"]=> string(14) "497-14966-2-ND" ["zzsbh"]=> string(10) "STL13N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 600V 7A PWRFLAT56" ["xl"]=> string(17) "MDmesh™ II Plus" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "7A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "420 毫欧 @ 4.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "17nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "580pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "55W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL13N60M2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 600V 7A PWRFLAT56
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37926 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±25V
功率-最大值：55W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937926
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL13N60M2' ) LIMIT 1
array(72) { ["id"]=> string(5) "47421" ["pdf_add"]=> string(173) "http://www.st.com/content/ccc/resource/technical/document/datasheet/group3/1c/c5/19/10/b3/72/4c/e5/DM00290959/files/DM00290959.pdf/jcr:content/translations/en.DM00290959.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "STL13N60DM2" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 8A POWERFLAT HV" ["xl"]=> string(13) "MDmesh™ DM2" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "8A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "370 毫欧 @ 4A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "19nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "730pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "52W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607926191" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL13N60DM2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： MOSFET N-CH 600V 8A POWERFLAT HV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47421 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：8A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103947421
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL13N60DM2' ) LIMIT 1
array(72) { ["id"]=> string(5) "47445" ["pdf_add"]=> string(55) "https://www.st.com/resource/en/datasheet/stl13n60m6.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "STL13N60M6" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "N-CHANNEL 600 V 0.175 OHM TYP. 1" ["xl"]=> string(12) "MDmesh™ M6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "7A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "415 毫欧 @ 3.5A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(14) "4.75V @ 250µA" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(5) "±25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "52W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607926485" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL13N60M6复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： N-CHANNEL 600 V 0.175 OHM TYP. 1
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47445 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103947445
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL13N60M6' ) LIMIT 1
array(72) { ["id"]=> string(5) "48432" ["pdf_add"]=> string(55) "https://www.st.com/resource/en/datasheet/stl10n60m6.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "STL10N60M6" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "N-CHANNEL 600 V 0.29 OHM TYP. 12" ["xl"]=> string(12) "MDmesh™ M6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "5.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "660 毫欧 @ 2.75A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(14) "4.75V @ 250µA" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(5) "±25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "48W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607930180" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL10N60M6复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： N-CHANNEL 600 V 0.29 OHM TYP. 12
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48432 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：5.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103948432
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL10N60M6' ) LIMIT 1
array(72) { ["id"]=> string(5) "50516" ["pdf_add"]=> string(55) "https://www.st.com/resource/en/datasheet/stl12n60m6.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "STL12N60M6" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "N-CHANNEL 600 V 0.175 OHM TYP. 1" ["xl"]=> string(12) "MDmesh™ M6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "6.4A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "490 毫欧 @ 3.2A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(14) "4.75V @ 250µA" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(5) "±25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "48W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935397" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL12N60M6复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： N-CHANNEL 600 V 0.175 OHM TYP. 1
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50516 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：6.4A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103950516
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL12N60M6' ) LIMIT 1
array(72) { ["id"]=> string(5) "50611" ["pdf_add"]=> string(55) "https://www.st.com/resource/en/datasheet/stl18n60m6.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "STL18N60M6" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "N-CHANNEL 600 V, 255 MOHM TYP.," ["xl"]=> string(12) "MDmesh™ M6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "9A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "308毫欧 @ 6.5A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "16.8nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "650pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "57W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935521" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL18N60M6复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： N-CHANNEL 600 V, 255 MOHM TYP.,
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50611 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：9A（Tc）
Vgs(最大值)：±25V
功率-最大值：57W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103950611
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL18N60M6' ) LIMIT 1
array(72) { ["id"]=> string(5) "50639" ["pdf_add"]=> string(55) "https://www.st.com/resource/en/datasheet/stl22n60m6.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "STL22N60M6" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "N-CHANNEL 600 V, 220 MOHM TYP.," ["xl"]=> string(12) "MDmesh™ M6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "10A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "250 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "20nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "800pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "57W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（5x6）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935556" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL22N60M6复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述： N-CHANNEL 600 V, 220 MOHM TYP.,
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50639 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：10A（Tc）
Vgs(最大值)：±25V
功率-最大值：57W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103950639
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL22N60M6' ) LIMIT 1

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