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array(69) { ["id"]=> string(3) "162" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/69026/si7272dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7272DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7272DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(30) "MOSFET 2N-CH 30V 25A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(3) "25A" ["bt_id_vgs_rds"]=> string(22) "9.3 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "26nC @ 10V" ["bt_vds_srdr"]=> string(12) "1100pF @ 15V" ["gn_zdz"]=> string(3) "22W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7272DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 30V 25A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 162 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：25A
最大功率值：22W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041162
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7272DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "163" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/65366/si7288dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7288DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7288DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "96000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(30) "MOSFET 2N-CH 40V 20A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(3) "20A" ["bt_id_vgs_rds"]=> string(21) "19 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.8V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "15nC @ 10V" ["bt_vds_srdr"]=> string(11) "565pF @ 20V" ["gn_zdz"]=> string(5) "15.6W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "热销" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7288DP-T1-GE3复制
状态： 热销 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 40V 20A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 163 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：40V
电流-连续漏极(id)：20A
最大功率值：15.6W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041163
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7288DP-T1-GE3' ) LIMIT 1
供应商:
库存:16
array(69) { ["id"]=> string(3) "170" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/65365/si7938dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7938DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7938DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "24000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(30) "MOSFET 2N-CH 40V 60A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(3) "60A" ["bt_id_vgs_rds"]=> string(24) "5.8 毫欧 @ 18.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "65nC @ 10V" ["bt_vds_srdr"]=> string(12) "2300pF @ 20V" ["gn_zdz"]=> string(3) "46W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7938DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 40V 60A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 170 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：40V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041170
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7938DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "178" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/73130/73130.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(19) "SI7949DP-T1-E3TR-ND" ["zzsbh"]=> string(14) "SI7949DP-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(31) "MOSFET 2P-CH 60V 3.2A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "2 个 P 沟道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(4) "3.2A" ["bt_id_vgs_rds"]=> string(20) "64 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "40nC @ 10V" ["bt_vds_srdr"]=> string(1) "-" ["gn_zdz"]=> string(4) "1.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7949DP-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2P-CH 60V 3.2A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 178 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：60V
电流-连续漏极(id)：3.2A
最大功率值：1.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041178
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7949DP-T1-E3' ) LIMIT 1
array(69) { ["id"]=> string(3) "179" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/71911/si7540dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(19) "SI7540DP-T1-E3TR-ND" ["zzsbh"]=> string(14) "SI7540DP-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "18000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(32) "MOSFET N/P-CH 12V 7.6A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(11) "7.6A，5.7A" ["bt_id_vgs_rds"]=> string(24) "17 毫欧 @ 11.8A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "17nC @ 4.5V" ["bt_vds_srdr"]=> string(1) "-" ["gn_zdz"]=> string(4) "1.4W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7540DP-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET N/P-CH 12V 7.6A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 179 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：逻辑电平门
漏源极电压(vdss)：12V
电流-连续漏极(id)：7.6A，5.7A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041179
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7540DP-T1-E3' ) LIMIT 1
array(69) { ["id"]=> string(3) "180" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/71911/si7540dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7540DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7540DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(32) "MOSFET N/P-CH 12V 7.6A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(11) "7.6A，5.7A" ["bt_id_vgs_rds"]=> string(24) "17 毫欧 @ 11.8A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "17nC @ 4.5V" ["bt_vds_srdr"]=> string(1) "-" ["gn_zdz"]=> string(4) "1.4W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7540DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET N/P-CH 12V 7.6A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 180 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：逻辑电平门
漏源极电压(vdss)：12V
电流-连续漏极(id)：7.6A，5.7A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041180
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7540DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "187" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/66719/si7997dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7997DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7997DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992544" ["ms"]=> string(30) "MOSFET 2P-CH 30V 60A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "2 个 P 沟道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(3) "60A" ["bt_id_vgs_rds"]=> string(22) "5.5 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "160nC @ 10V" ["bt_vds_srdr"]=> string(12) "6200pF @ 15V" ["gn_zdz"]=> string(3) "46W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7997DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2P-CH 30V 60A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 187 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041187
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7997DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "193" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72960/72960.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7956DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7956DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992544" ["ms"]=> string(32) "MOSFET 2N-CH 150V 2.6A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(4) "2.6A" ["bt_id_vgs_rds"]=> string(23) "105 毫欧 @ 4.1A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "26nC @ 10V" ["bt_vds_srdr"]=> string(1) "-" ["gn_zdz"]=> string(4) "1.4W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7956DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 150V 2.6A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 193 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：150V
电流-连续漏极(id)：2.6A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041193
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7956DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "195" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/69974/si7994dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7994DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7994DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992544" ["ms"]=> string(30) "MOSFET 2N-CH 30V 60A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(3) "60A" ["bt_id_vgs_rds"]=> string(22) "5.6 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "80nC @ 10V" ["bt_vds_srdr"]=> string(12) "3500pF @ 15V" ["gn_zdz"]=> string(3) "46W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7994DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 30V 60A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 195 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041195
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7994DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "399" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72118/72118.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7942DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7942DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "9000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(32) "MOSFET 2N-CH 100V 3.8A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "3.8A" ["bt_id_vgs_rds"]=> string(22) "49 毫欧 @ 5.9A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "24nC @ 10V" ["bt_vds_srdr"]=> string(1) "-" ["gn_zdz"]=> string(4) "1.4W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7942DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 100V 3.8A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 399 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：100V
电流-连续漏极(id)：3.8A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041399
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7942DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "403" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/70359/si7236dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7236DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7236DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992520" ["ms"]=> string(30) "MOSFET 2N-CH 20V 60A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(3) "60A" ["bt_id_vgs_rds"]=> string(25) "5.2 毫欧 @ 20.7A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "105nC @ 10V" ["bt_vds_srdr"]=> string(12) "4000pF @ 10V" ["gn_zdz"]=> string(3) "46W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7236DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 20V 60A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 403 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：20V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041403
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7236DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "513" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/68970/si7998dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7998DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7998DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992544" ["ms"]=> string(30) "MOSFET 2N-CH 30V 25A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(9) "25A，30A" ["bt_id_vgs_rds"]=> string(22) "9.3 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "26nC @ 10V" ["bt_vds_srdr"]=> string(12) "1100pF @ 15V" ["gn_zdz"]=> string(9) "22W，40W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7998DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 30V 25A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 513 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：25A，30A
最大功率值：22W，40W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041513
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7998DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "517" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/73130/73130.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7949DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7949DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "12000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992544" ["ms"]=> string(31) "MOSFET 2P-CH 60V 3.2A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "2 个 P 沟道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(4) "3.2A" ["bt_id_vgs_rds"]=> string(20) "64 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "40nC @ 10V" ["bt_vds_srdr"]=> string(1) "-" ["gn_zdz"]=> string(4) "1.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7949DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2P-CH 60V 3.2A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 517 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：60V
电流-连续漏极(id)：3.2A
最大功率值：1.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041517
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7949DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "872" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/68391/si7980dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7980DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7980DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992544" ["ms"]=> string(29) "MOSFET 2N-CH 20V 8A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(2) "8A" ["bt_id_vgs_rds"]=> string(20) "22 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["bt_vds_srdr"]=> string(12) "1010pF @ 10V" ["gn_zdz"]=> string(13) "19.8W，21.9W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7980DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 20V 8A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 872 ) LIMIT 1
Fet类型：2 个 N 通道（半桥）
Fet功能：标准
漏源极电压(vdss)：20V
电流-连续漏极(id)：8A
最大功率值：19.8W，21.9W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041872
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7980DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "893" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/67017/sqj960ep.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SQJ960EP-T1_GE3TR-ND" ["zzsbh"]=> string(15) "SQJ960EP-T1_GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992602" ["ms"]=> string(19) "MOSFET 2N-CH 60V 8A" ["xl"]=> string(33) "Automotive, AEC-Q101, TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(2) "8A" ["bt_id_vgs_rds"]=> string(22) "36 毫欧 @ 5.3A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "20nC @ 10V" ["bt_vds_srdr"]=> string(11) "735pF @ 25V" ["gn_zdz"]=> string(3) "34W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SQJ960EP-T1_GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 60V 8A
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 893 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：60V
电流-连续漏极(id)：8A
最大功率值：34W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：1041893
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJ960EP-T1_GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "903" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/62634/si7252dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7252DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7252DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(32) "MOSFET 2N-CH 100V 36.7A PPAK 8SO" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(5) "36.7A" ["bt_id_vgs_rds"]=> string(21) "18 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["bt_vds_srdr"]=> string(12) "1170pF @ 50V" ["gn_zdz"]=> string(3) "46W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7252DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 100V 36.7A PPAK 8SO
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 903 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：100V
电流-连续漏极(id)：36.7A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041903
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7252DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(3) "921" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/68700/si7234dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(20) "SI7234DP-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI7234DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992520" ["ms"]=> string(30) "MOSFET 2N-CH 12V 60A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(3) "60A" ["bt_id_vgs_rds"]=> string(23) "3.4 毫欧 @ 20A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "120nC @ 10V" ["bt_vds_srdr"]=> string(11) "5000pF @ 6V" ["gn_zdz"]=> string(3) "46W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7234DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 12V 60A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 921 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：12V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041921
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7234DP-T1-GE3' ) LIMIT 1
array(69) { ["id"]=> string(4) "1140" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72118/72118.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(19) "SI7942DP-T1-E3TR-ND" ["zzsbh"]=> string(14) "SI7942DP-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(32) "MOSFET 2N-CH 100V 3.8A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "3.8A" ["bt_id_vgs_rds"]=> string(22) "49 毫欧 @ 5.9A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "24nC @ 10V" ["bt_vds_srdr"]=> string(1) "-" ["gn_zdz"]=> string(4) "1.4W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7942DP-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 100V 3.8A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1140 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：100V
电流-连续漏极(id)：3.8A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10411140
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7942DP-T1-E3' ) LIMIT 1
array(69) { ["id"]=> string(4) "1538" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/62832/sqj844aep.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(19) "SQJ844AEP-T1_GE3-ND" ["zzsbh"]=> string(16) "SQJ844AEP-T1_GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992589" ["ms"]=> string(29) "MOSFET 2N-CH 30V 8A PPAK SO-8" ["xl"]=> string(33) "Automotive, AEC-Q101, TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(2) "8A" ["bt_id_vgs_rds"]=> string(24) "16.6 毫欧 @ 7.6A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "26nC @ 10V" ["bt_vds_srdr"]=> string(12) "1161pF @ 15V" ["gn_zdz"]=> string(3) "48W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SQJ844AEP-T1_GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 30V 8A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1538 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：8A
最大功率值：48W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10411538
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJ844AEP-T1_GE3' ) LIMIT 1
array(69) { ["id"]=> string(4) "1567" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/66817/si7270dp.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg" ["images"]=> string(92) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/SO-8_Dual_Pad.jpg" ["ljbh"]=> string(18) "SI7270DP-T1-GE3-ND" ["zzsbh"]=> string(15) "SI7270DP-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705992532" ["ms"]=> string(29) "MOSFET 2N-CH 30V 8A PPAK SO-8" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(2) "8A" ["bt_id_vgs_rds"]=> string(20) "21 毫欧 @ 8A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.8V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "21nC @ 10V" ["bt_vds_srdr"]=> string(11) "900pF @ 15V" ["gn_zdz"]=> string(5) "17.8W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "POWERPAK® SO-8 双" ["gysqjfz"]=> string(20) "POWERPAK® SO-8 DUAL" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： SI7270DP-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述： MOSFET 2N-CH 30V 8A PPAK SO-8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1567 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：8A
最大功率值：17.8W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10411567
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7270DP-T1-GE3' ) LIMIT 1

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