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array(68) { ["id"]=> string(4) "9539" ["pdf_add"]=> string(170) "http://www.st.com/content/ccc/resource/technical/document/datasheet/04/f4/5f/f5/06/c6/4a/6c/DM00035034.pdf/files/DM00035034.pdf/jcr:content/translations/en.DM00035034.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(61) "//media.digikey.com/Renders/STMicro%20Renders/3-PowerUDFN.jpg" ["images"]=> string(81) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/3-PowerUDFN.jpg" ["ljbh"]=> string(14) "497-13093-2-ND" ["zzsbh"]=> string(8) "3STL2540" ["zddgs"]=> string(5) "10000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "TRANS PNP 40V 5A POWERFLAT3" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(3) "PNP" ["dl_jdj_ic"]=> string(2) "5A" ["dy_jsjj"]=> string(3) "40V" ["bt_ib"]=> string(17) "200mV @ 10mA，1A" ["dl_jdjjz_zdz"]=> string(15) "100nA（ICBO）" ["bt_ic"]=> string(13) "210 @ 2A，2V" ["gl_zdz"]=> string(4) "1.2W" ["pl_yq"]=> string(6) "130MHz" ["azlx"]=> string(15) "表面贴装型" ["gzwd"]=> string(14) "150°C（TJ）" ["spq"]=> NULL ["moq"]=> string(2) "50" ["fz_wk"]=> string(11) "3-POWERUDFN" ["gysqjfz"]=> string(21) "POWERFLAT™（2X2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(0) "" ["gl_gnd"]=> string(0) "" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(0) "" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "122" ["wl_num"]=> string(4) "1032" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(18) "golon_jtg_sj_bjt_d" ["ch_bm"]=> string(27) "单路晶体管-双极(BJT)" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["bz"]=> string(0) "" ["is_rohs"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_sj_bjt_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1032" ["parent_id"]=> string(3) "121" ["lb"]=> string(38) "晶体管 单路晶体管-双极(BJT)" ["action_name"]=> string(4) "jtg1" ["rate"]=> string(5) "1.158" ["rate_hot"]=> string(2) "50" ["moq_rate"]=> string(6) "1.6580" } }
型号： 3STL2540复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：POWERFLAT™（2X2）
外壳：3-POWERUDFN
描述： TRANS PNP 40V 5A POWERFLAT3
SELECT * FROM `golon_jtg_sj_bjt_d` WHERE ( `id` = 9539 ) LIMIT 1
晶体管类型：PNP
电流-集电极(ic)(最大值)：5A
电压-集射极击穿(最大值)：40V
电流-集电极截止(最大值)：100nA（ICBO）
不同?ic，vce时的dc电流增益（hfe）（最小值）：210 @ 2A，2V
功率-最大值：1.2W
频率-跃迁：130MHz
丝印：(请登录)
料号：10329539
量大可议价
起订量:50 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '3STL2540' ) LIMIT 1
array(72) { ["id"]=> string(5) "26031" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00084061.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/STMicro%20Renders/6-WDFN%20Exposed%20Pad.jpg" ["images"]=> string(88) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/6-WDFN_Exposed_Pad.jpg" ["ljbh"]=> string(14) "497-15510-2-ND" ["zzsbh"]=> string(10) "STL4P3LLH6" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 30V 4A POWERFLAT" ["xl"]=> string(27) "DeepGATE™, STripFET™ H6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "4A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "56 毫欧 @ 2A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "6nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "639pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.4W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "6-PowerWDFN" ["gysqjfz"]=> string(21) "PowerFlat™（2x2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(4) "4K3L" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL4P3LLH6复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（2x2）
外壳：6-PowerWDFN
描述： MOSFET P-CH 30V 4A POWERFLAT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26031 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：4A（Ta）
Vgs(最大值)：±20V
功率-最大值：2.4W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103926031
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL4P3LLH6' ) LIMIT 1
array(72) { ["id"]=> string(5) "26083" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00091043.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/STMicro%20Renders/6-WDFN%20Exposed%20Pad.jpg" ["images"]=> string(88) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/6-WDFN_Exposed_Pad.jpg" ["ljbh"]=> string(14) "497-14996-2-ND" ["zzsbh"]=> string(9) "STL4P2UH7" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET P-CH 20V 4A PWRFLAT2X2" ["xl"]=> string(28) "DeepGATE™, STripFET™ VII" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(10) "4A（Tc）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(22) "100 毫欧 @ 2A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "4.8nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "510pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.4W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "6-PowerWDFN" ["gysqjfz"]=> string(21) "PowerFlat™（2x2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL4P2UH7复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（2x2）
外壳：6-PowerWDFN
描述： MOSFET P-CH 20V 4A PWRFLAT2X2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26083 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：4A（Tc）
Vgs(最大值)：±8V
功率-最大值：2.4W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103926083
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL4P2UH7' ) LIMIT 1
array(72) { ["id"]=> string(5) "26408" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00093147.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/STMicro%20Renders/6-WDFN%20Exposed%20Pad.jpg" ["images"]=> string(88) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/6-WDFN_Exposed_Pad.jpg" ["ljbh"]=> string(14) "497-14997-2-ND" ["zzsbh"]=> string(9) "STL8P2UH7" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET P-CH 20V 8A POWERFLAT22" ["xl"]=> string(28) "DeepGATE™, STripFET™ VII" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(10) "8A（Tc）" ["qddy"]=> string(11) "1.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "22.5 毫欧 @ 4A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "22nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(12) "2390pF @ 16V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.4W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "6-PowerWDFN" ["gysqjfz"]=> string(21) "PowerFlat™（2x2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL8P2UH7复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（2x2）
外壳：6-PowerWDFN
描述： MOSFET P-CH 20V 8A POWERFLAT22
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26408 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：8A（Tc）
Vgs(最大值)：±8V
功率-最大值：2.4W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103926408
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL8P2UH7' ) LIMIT 1
array(72) { ["id"]=> string(5) "35034" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00055974.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/STMicro%20Renders/6-WDFN%20Exposed%20Pad.jpg" ["images"]=> string(88) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/6-WDFN_Exposed_Pad.jpg" ["ljbh"]=> string(14) "497-13651-2-ND" ["zzsbh"]=> string(10) "STL6N3LLH6" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V PWRFLT2X2" ["xl"]=> string(27) "DeepGATE™, STripFET™ VI" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(1) "-" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "25 毫欧 @ 3A，10V" ["bt_id_vgs_zdz"]=> string(23) "1V @ 250µA（最小）" ["bt_vgs_sjdh"]=> string(12) "3.6nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "283pF @ 24V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.4W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "6-PowerWDFN" ["gysqjfz"]=> string(21) "PowerFlat™（2x2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL6N3LLH6复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（2x2）
外壳：6-PowerWDFN
描述： MOSFET N-CH 30V PWRFLT2X2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35034 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：-
Vgs(最大值)：±20V
功率-最大值：2.4W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103935034
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL6N3LLH6' ) LIMIT 1
array(72) { ["id"]=> string(5) "36432" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00108370.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/STMicro%20Renders/6-WDFN%20Exposed%20Pad.jpg" ["images"]=> string(88) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/6-WDFN_Exposed_Pad.jpg" ["ljbh"]=> string(14) "497-14993-2-ND" ["zzsbh"]=> string(9) "STL3N10F7" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 100V 4A POWERFLAT22" ["xl"]=> string(28) "DeepGATE™, STripFET™ VII" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(10) "4A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "70 毫欧 @ 2A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "7.8nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "408pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.4W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "6-PowerWDFN" ["gysqjfz"]=> string(21) "PowerFlat™（2x2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL3N10F7复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（2x2）
外壳：6-PowerWDFN
描述： MOSFET N-CH 100V 4A POWERFLAT22
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36432 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：4A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.4W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103936432
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL3N10F7' ) LIMIT 1
array(72) { ["id"]=> string(5) "39694" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00053721.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/STMicro%20Renders/6-WDFN%20Exposed%20Pad.jpg" ["images"]=> string(88) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/6-WDFN_Exposed_Pad.jpg" ["ljbh"]=> string(14) "497-13777-2-ND" ["zzsbh"]=> string(9) "STL6N2VH5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 20V 6A 6PWRFLAT" ["xl"]=> string(13) "STripFET™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(1) "-" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(21) "30 毫欧 @ 3A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "700mV @ 250µA" ["bt_vgs_sjdh"]=> string(10) "6nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "550pF @ 16V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.4W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "6-PowerWDFN" ["gysqjfz"]=> string(21) "PowerFlat™（2x2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL6N2VH5复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（2x2）
外壳：6-PowerWDFN
描述： MOSFET N-CH 20V 6A 6PWRFLAT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 39694 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：-
Vgs(最大值)：±8V
功率-最大值：2.4W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103939694
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL6N2VH5' ) LIMIT 1
array(72) { ["id"]=> string(5) "46864" ["pdf_add"]=> string(173) "http://www.st.com/content/ccc/resource/technical/document/datasheet/group0/1b/d9/b1/3e/80/d3/47/e9/DM00223993/files/DM00223993.pdf/jcr:content/translations/en.DM00223993.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(64) "//media.digikey.com/Renders/STMicro%20Renders/497;8368575;;6.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(8) "STL7N6F7" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "N-CHANNEL 60 V, 0.019 OHM TYP.," ["xl"]=> string(11) "STripFET™" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(10) "7A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "25 毫欧 @ 3.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "8nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "450pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.4W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "6-PowerWDFN" ["gysqjfz"]=> string(21) "PowerFlat™（2x2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607651477" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STL7N6F7复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：PowerFlat™（2x2）
外壳：6-PowerWDFN
描述： N-CHANNEL 60 V, 0.019 OHM TYP.,
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46864 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.4W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946864
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL7N6F7' ) LIMIT 1

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