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array(72) { ["id"]=> string(5) "21433" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSZ060NE2LSTR-ND" ["zzsbh"]=> string(11) "BSZ060NE2LS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 25V 12A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "12A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(20) "6 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "9.1nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "670pF @ 12V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.1W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ060NE2LS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 25V 12A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 21433 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：25V
电流-连续漏极(id)：12A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：2.1W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103921433
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ060NE2LS' ) LIMIT 1
array(72) { ["id"]=> string(5) "21457" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ065N03LS_Rev2.1_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed7fbc0b23834" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSZ065N03LSTR-ND" ["zzsbh"]=> string(11) "BSZ065N03LS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "30000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 12A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "12A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "6.5 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "10nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "670pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.1W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ065N03LS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 12A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 21457 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：2.1W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103921457
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ065N03LS' ) LIMIT 1
array(72) { ["id"]=> string(5) "24885" ["pdf_add"]=> string(132) "http://www.infineon.com/dgdl/BSZ0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f25d963971d2f" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(14) "BSZ0902NSTR-ND" ["zzsbh"]=> string(9) "BSZ0902NS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 40A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "19A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "2.6 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "26nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1700pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.1W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ0902NS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 40A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24885 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：19A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：2.1W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103924885
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ0902NS' ) LIMIT 1
array(72) { ["id"]=> string(5) "24915" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSZ0902NSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308e38cc9c33f9" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(15) "BSZ0902NSITR-ND" ["zzsbh"]=> string(10) "BSZ0902NSI" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 21A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "21A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "2.8 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "24nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1500pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ0902NSI复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 21A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24915 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：21A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：2.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103924915
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ0902NSI' ) LIMIT 1
array(72) { ["id"]=> string(5) "25713" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSZ019N03LSTR-ND" ["zzsbh"]=> string(11) "BSZ019N03LS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "55000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 22A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(24) "22A（Ta）. 40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.9 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "44nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2800pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.1W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ019N03LS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 22A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25713 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta）. 40A（Tc）
Vgs(最大值)：
功率-最大值：2.1W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925713
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ019N03LS' ) LIMIT 1
array(72) { ["id"]=> string(5) "25828" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSZ018NE2LSTR-ND" ["zzsbh"]=> string(11) "BSZ018NE2LS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "30000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 25V 23A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "23A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.8 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "39nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2800pF @ 12V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.1W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ018NE2LS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 25V 23A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25828 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：25V
电流-连续漏极(id)：23A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：2.1W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925828
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ018NE2LS' ) LIMIT 1
array(72) { ["id"]=> string(5) "25886" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/BSZ018NE2LSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093cc4a9471d2" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(17) "BSZ018NE2LSITR-ND" ["zzsbh"]=> string(12) "BSZ018NE2LSI" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 25V 22A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "22A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2500pF @ 12V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "69W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ018NE2LSI复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 25V 22A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25886 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：25V
电流-连续漏极(id)：22A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：69W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925886
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ018NE2LSI' ) LIMIT 1
array(72) { ["id"]=> string(5) "31761" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSZ042N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d4bf1862fd" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSZ042N06NSTR-ND" ["zzsbh"]=> string(11) "BSZ042N06NS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 19A 8TSDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(25) "17A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "4.2 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.8V @ 36µA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2000pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.1W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ042N06NS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 60V 19A 8TSDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31761 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：17A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：2.1W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103931761
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ042N06NS' ) LIMIT 1
array(72) { ["id"]=> string(5) "32304" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSZ0904NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2a1ec7d90032" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(15) "BSZ0904NSITR-ND" ["zzsbh"]=> string(10) "BSZ0904NSI" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 40A TSDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(46) "MOSFET N 通道，肖特基，金属氧化物!" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "40A（Ta），18A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(20) "4 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "17nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1100pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "37W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ0904NSI复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 40A TSDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32304 ) LIMIT 1
Fet类型：MOSFET N 通道，肖特基，金属氧化物!
漏源极电压(vdss)：30V
电流-连续漏极(id)：40A（Ta），18A（Tc）
Vgs(最大值)：
功率-最大值：37W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932304
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ0904NSI' ) LIMIT 1
array(72) { ["id"]=> string(5) "32312" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSZ036NE2LSTR-ND" ["zzsbh"]=> string(11) "BSZ036NE2LS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 25V 16A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "16A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "3.6 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "16nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1200pF @ 12V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.1W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "热销" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ036NE2LS复制
状态： 热销 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 25V 16A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32312 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：25V
电流-连续漏极(id)：16A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：2.1W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932312
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ036NE2LS' ) LIMIT 1
供应商:
库存:200
array(72) { ["id"]=> string(5) "32492" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSZ0901NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f2550ff441cf9" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(15) "BSZ0901NSITR-ND" ["zzsbh"]=> string(10) "BSZ0901NSI" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 40A TSDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(46) "MOSFET N 通道，肖特基，金属氧化物!" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "25A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "2.1 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "41nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2600pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "69W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(4) "5000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ0901NSI复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 40A TSDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32492 ) LIMIT 1
Fet类型：MOSFET N 通道，肖特基，金属氧化物!
漏源极电压(vdss)：30V
电流-连续漏极(id)：25A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：69W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932492
量大可议价
起订量:10 修改
包装量: 5000个/ 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ0901NSI' ) LIMIT 1
array(69) { ["id"]=> string(4) "1996" ["pdf_add"]=> string(91) "http://www.infineon.com/dgdl/BSZ15DC02KD_rev2+2.pdf?fileId=5546d4614815da88014820dc797b006d" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(20) "BSZ15DC02KDHXTMA1-ND" ["zzsbh"]=> string(17) "BSZ15DC02KDHXTMA1" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N/P-CH 20V 5.1/3.2A TDSON" ["xl"]=> string(30) "Automotive, AEC-Q101, HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "N 和 P 沟道互补型" ["fetgn"]=> string(32) "逻辑电平栅极，2.5V 驱动" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "5.1A，3.2A" ["bt_id_vgs_rds"]=> string(23) "55 毫欧 @ 5.1A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.4V @ 110µA" ["bt_vgs_sjdh"]=> string(12) "2.8nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "419pF @ 10V" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： BSZ15DC02KDHXTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N/P-CH 20V 5.1/3.2A TDSON
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1996 ) LIMIT 1
Fet类型：N 和 P 沟道互补型
Fet功能：逻辑电平栅极，2.5V 驱动
漏源极电压(vdss)：20V
电流-连续漏极(id)：5.1A，3.2A
最大功率值：2.5W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10411996
量大可议价
起订量:10 修改
包装量: 修改
个
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ15DC02KDHXTMA1' ) LIMIT 1
array(69) { ["id"]=> string(4) "2009" ["pdf_add"]=> string(104) "http://www.infineon.com/dgdl/Infineon-BSZ215C+H-DS-v02_01-EN.pdf?fileId=5546d46250cc1fdf015133809974350a" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSZ215CHXTMA1-ND" ["zzsbh"]=> string(13) "BSZ215CHXTMA1" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N/P-CH 20V 8TSDSON" ["xl"]=> string(32) "Automotive, AEC-Q101, OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "N 和 P 沟道互补型" ["fetgn"]=> string(32) "逻辑电平栅极，2.5V 驱动" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "5.1A，3.2A" ["bt_id_vgs_rds"]=> string(23) "55 毫欧 @ 5.1A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.4V @ 110µA" ["bt_vgs_sjdh"]=> string(12) "2.8nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "419pF @ 10V" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(27) "PG-TSDSON-8-FL（3.3X3.3）" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： BSZ215CHXTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8-FL（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N/P-CH 20V 8TSDSON
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 2009 ) LIMIT 1
Fet类型：N 和 P 沟道互补型
Fet功能：逻辑电平栅极，2.5V 驱动
漏源极电压(vdss)：20V
电流-连续漏极(id)：5.1A，3.2A
最大功率值：2.5W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10412009
量大可议价
起订量:10 修改
包装量: 修改
个
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ215CHXTMA1' ) LIMIT 1

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