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array(72) { ["id"]=> string(5) "27855" ["pdf_add"]=> string(132) "http://www.infineon.com/dgdl/BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(14) "BSZ0901NSTR-ND" ["zzsbh"]=> string(9) "BSZ0901NS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.350000" ["gys_id"]=> string(3) "291" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(20) "MOSFET N-CH 30V S308" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "22A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(20) "2 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2850pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "50W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(4) "5000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ0901NS复制
状态： 爆款 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V S308
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27855 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：50W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103927855
10+: ￥0.52
5000+: ￥0.40 array(5) { ["count"]=> string(1) "0" ["gys_id"]=> NULL ["zzsbh"]=> NULL ["price"]=> NULL ["show_price"]=> NULL }
起订量:10 修改
包装量: 5000个/ 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ0901NS' ) LIMIT 1
array(72) { ["id"]=> string(5) "20380" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ097N04LSG_rev1.1.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643be1d53068c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ097N04LSGINTR-ND" ["zzsbh"]=> string(13) "BSZ097N04LS G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 40V 40A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(25) "12A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "9.7 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 14µA" ["bt_vgs_sjdh"]=> string(10) "24nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1900pF @ 20V" ["fetgn"]=> string(15) "逻辑电平门" ["gn_zdz"]=> string(3) "35W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ097N04LS G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 40V 40A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20380 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：40V
电流-连续漏极(id)：12A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：35W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920380
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ097N04LS G' ) LIMIT 1
array(72) { ["id"]=> string(5) "21283" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ105N04NSG_rev1.1.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c485c67f084e" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ105N04NSGINTR-ND" ["zzsbh"]=> string(13) "BSZ105N04NS G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 40V 40A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(25) "11A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "10.5 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 14µA" ["bt_vgs_sjdh"]=> string(10) "17nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1300pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "35W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ105N04NS G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 40V 40A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 21283 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：40V
电流-连续漏极(id)：11A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：35W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103921283
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ105N04NS G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22598" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15a835541a6b" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "BSZ16DN25NS3GTR-ND" ["zzsbh"]=> string(14) "BSZ16DN25NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 250V 10.9A 8TSDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "250V" ["dl_lxlj"]=> string(13) "10.9A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "165 毫欧 @ 5.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 32µA" ["bt_vgs_sjdh"]=> string(12) "11.4nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "920pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(5) "62.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ16DN25NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 250V 10.9A 8TSDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22598 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：250V
电流-连续漏极(id)：10.9A（Tc）
Vgs(最大值)：
功率-最大值：62.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922598
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ16DN25NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "24345" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ900N20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15f1be561a9b" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "BSZ900N20NS3GTR-ND" ["zzsbh"]=> string(14) "BSZ900N20NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 200V 15.2A 8TSDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(13) "15.2A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "90 毫欧 @ 7.6A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 30µA" ["bt_vgs_sjdh"]=> string(12) "11.6nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "920pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(5) "62.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ900N20NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 200V 15.2A 8TSDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24345 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：200V
电流-连续漏极(id)：15.2A（Tc）
Vgs(最大值)：
功率-最大值：62.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103924345
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ900N20NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "24849" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ058N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3fa0a7e03f2" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ058N03LSGINTR-ND" ["zzsbh"]=> string(13) "BSZ058N03LS G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 40A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "15A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "5.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "30nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2400pF @ 15V" ["fetgn"]=> string(15) "逻辑电平门" ["gn_zdz"]=> string(3) "45W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ058N03LS G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 40A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24849 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：45W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103924849
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ058N03LS G' ) LIMIT 1
array(72) { ["id"]=> string(5) "25532" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ067N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb0f41537ff6" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/8-TSDSON.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-TSDSON.jpg" ["ljbh"]=> string(20) "BSZ067N06LS3GINTR-ND" ["zzsbh"]=> string(14) "BSZ067N06LS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 60V 20A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(25) "14A（Ta），20A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "6.7 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.2V @ 35µA" ["bt_vgs_sjdh"]=> string(10) "67nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "5100pF @ 30V" ["fetgn"]=> string(15) "逻辑电平门" ["gn_zdz"]=> string(3) "69W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERVDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ067N06LS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERVDFN
描述： MOSFET N-CH 60V 20A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25532 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：14A（Ta），20A（Tc）
Vgs(最大值)：
功率-最大值：69W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925532
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ067N06LS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "25572" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15ceb1741a7c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "BSZ22DN20NS3GTR-ND" ["zzsbh"]=> string(14) "BSZ22DN20NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 200V 7A 8TSDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(10) "7A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "225 毫欧 @ 3.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 13µA" ["bt_vgs_sjdh"]=> string(11) "5.6nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "430pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "34W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ22DN20NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 200V 7A 8TSDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25572 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：200V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：
功率-最大值：34W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925572
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ22DN20NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "25575" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ42DN25NS3 GTR-ND" ["zzsbh"]=> string(14) "BSZ42DN25NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 250V 5A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "250V" ["dl_lxlj"]=> string(10) "5A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "425 毫欧 @ 2.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 13µA" ["bt_vgs_sjdh"]=> string(11) "5.5nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "430pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(5) "33.8W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ42DN25NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 250V 5A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25575 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：250V
电流-连续漏极(id)：5A（Tc）
Vgs(最大值)：
功率-最大值：33.8W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925575
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ42DN25NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "25578" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/BSZ123N08NS3G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e5ec96fdc0a00" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/8-TSDSON.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-TSDSON.jpg" ["ljbh"]=> string(20) "BSZ123N08NS3GINTR-ND" ["zzsbh"]=> string(14) "BSZ123N08NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(6) "105000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 80V 40A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(25) "10A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "12.3 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(12) "3.5V @ 33µA" ["bt_vgs_sjdh"]=> string(10) "25nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1700pF @ 40V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "66W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERVDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ123N08NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERVDFN
描述： MOSFET N-CH 80V 40A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25578 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：80V
电流-连续漏极(id)：10A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：66W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925578
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ123N08NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "25736" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ520N15NS3+Rev2.2.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0dd612226c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ520N15NS3 GTR-ND" ["zzsbh"]=> string(14) "BSZ520N15NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 150V 21A 8-TSDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(11) "21A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "52 毫欧 @ 18A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 35µA" ["bt_vgs_sjdh"]=> string(10) "12nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "890pF @ 75V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "57W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ520N15NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 150V 21A 8-TSDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25736 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：150V
电流-连续漏极(id)：21A（Tc）
Vgs(最大值)：
功率-最大值：57W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925736
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ520N15NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "26249" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSZ130N03LS_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4035f8203fc" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ130N03LSGINTR-ND" ["zzsbh"]=> string(13) "BSZ130N03LS G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 35A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "10A（Ta），35A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "13 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "13nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "970pF @ 15V" ["fetgn"]=> string(15) "逻辑电平门" ["gn_zdz"]=> string(3) "25W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ130N03LS G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 35A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26249 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta），35A（Tc）
Vgs(最大值)：
功率-最大值：25W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103926249
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ130N03LS G' ) LIMIT 1
array(72) { ["id"]=> string(5) "26426" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ440N10NS3+Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c32dbf312354" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(21) "BSZ440N10NS3 GINTR-ND" ["zzsbh"]=> string(14) "BSZ440N10NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "50000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 18A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "5.3A（Ta），18A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "44 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.7V @ 12µA" ["bt_vgs_sjdh"]=> string(11) "9.1nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "640pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "29W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ440N10NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 100V 18A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26426 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：100V
电流-连续漏极(id)：5.3A（Ta），18A（Tc）
Vgs(最大值)：
功率-最大值：29W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103926426
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ440N10NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "26434" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/8-TSDSON.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-TSDSON.jpg" ["ljbh"]=> string(20) "BSZ110N06NS3GINTR-ND" ["zzsbh"]=> string(14) "BSZ110N06NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 60V 20A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "20A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "11 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 23µA" ["bt_vgs_sjdh"]=> string(10) "33nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2700pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "50W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERVDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ110N06NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERVDFN
描述： MOSFET N-CH 60V 20A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26434 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：20A（Tc）
Vgs(最大值)：
功率-最大值：50W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103926434
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ110N06NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "27699" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSZ086P03NS3+G_2.0.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a30431ff9881501203d3a5e7d17a9" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ086P03NS3 GTR-ND" ["zzsbh"]=> string(14) "BSZ086P03NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 30V 40A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET P 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(27) "13.5A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "8.6 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.1V @ 105µA" ["bt_vgs_sjdh"]=> string(12) "57.5nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "4785pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "69W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ086P03NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET P-CH 30V 40A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27699 ) LIMIT 1
Fet类型：MOSFET P 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：13.5A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：69W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103927699
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ086P03NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "27702" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ086P03NS3E+G_2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431ff9881501203d5e6a1717c9" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(20) "BSZ086P03NS3E GTR-ND" ["zzsbh"]=> string(15) "BSZ086P03NS3E G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 30V 40A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET P 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(27) "13.5A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "8.6 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.1V @ 105µA" ["bt_vgs_sjdh"]=> string(12) "57.5nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "4785pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "69W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ086P03NS3E G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET P-CH 30V 40A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27702 ) LIMIT 1
Fet类型：MOSFET P 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：13.5A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：69W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103927702
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ086P03NS3E G' ) LIMIT 1
array(72) { ["id"]=> string(5) "27816" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ035N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddeb998f02e7" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ035N03MSGINTR-ND" ["zzsbh"]=> string(13) "BSZ035N03MS G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "25000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 40A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "18A（Ta），40A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "3.5 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "74nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "5700pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "69W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ035N03MS G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 40A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27816 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：69W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103927816
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ035N03MS G' ) LIMIT 1
array(72) { ["id"]=> string(5) "31504" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ900N15NS3 GTR-ND" ["zzsbh"]=> string(14) "BSZ900N15NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 150V 13A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(11) "13A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "90 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 20µA" ["bt_vgs_sjdh"]=> string(9) "7nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "510pF @ 75V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "38W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ900N15NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 150V 13A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31504 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：150V
电流-连续漏极(id)：13A（Tc）
Vgs(最大值)：
功率-最大值：38W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103931504
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ900N15NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "31625" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSZ240N12NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432a40a650012a42f3057a0038" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSZ240N12NS3 GTR-ND" ["zzsbh"]=> string(14) "BSZ240N12NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 120V 37A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "120V" ["dl_lxlj"]=> string(11) "37A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "24 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 35µA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1900pF @ 60V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "66W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ240N12NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 120V 37A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31625 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：120V
电流-连续漏极(id)：37A（Tc）
Vgs(最大值)：
功率-最大值：66W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103931625
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ240N12NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "32134" ["pdf_add"]=> string(108) "http://www.infineon.com/dgdl/Infineon-BSZ340N08NS3G-DS-v02_03-en.pdf?fileId=db3a30431ff9881501206626660b6c72" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(20) "BSZ340N08NS3GINTR-ND" ["zzsbh"]=> string(14) "BSZ340N08NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 80V 23A TSDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(24) "6A（Ta），23A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "34 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(12) "3.5V @ 12µA" ["bt_vgs_sjdh"]=> string(11) "9.1nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "630pF @ 40V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "32W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(24) "PG-TSDSON-8（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSZ340N08NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET N-CH 80V 23A TSDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32134 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：80V
电流-连续漏极(id)：6A（Ta），23A（Tc）
Vgs(最大值)：
功率-最大值：32W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932134
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ340N08NS3 G' ) LIMIT 1

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