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array(72) { ["id"]=> string(5) "22697" ["pdf_add"]=> string(131) "http://www.infineon.com/dgdl/IPA65R660CFD2.41.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a30432e0bea21012e14dccc656df9" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg" ["ljbh"]=> string(17) "IPB65R660CFDTR-ND" ["zzsbh"]=> string(12) "IPB65R660CFD" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(5) "17000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 650V 6A TO263" ["xl"]=> string(12) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(10) "6A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "660 毫欧 @ 2.1A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "22nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "615pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(5) "62.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-3，D²PAK（2 引线+接片），TO-263AB" ["gysqjfz"]=> string(8) "PG-TO263" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB65R660CFD复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263
外壳：TO-263-3，D²PAK（2 引线+接片），TO-263AB
描述： MOSFET N-CH 650V 6A TO263
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22697 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：650V
电流-连续漏极(id)：6A（Tc）
Vgs(最大值)：
功率-最大值：62.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922697
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB65R660CFD' ) LIMIT 1
array(72) { ["id"]=> string(5) "25219" ["pdf_add"]=> string(131) "http://www.infineon.com/dgdl/IPW65R420CFD_2_2.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432f91014f012f9c293f1a7399" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg" ["ljbh"]=> string(17) "IPB65R420CFDTR-ND" ["zzsbh"]=> string(12) "IPB65R420CFD" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "2000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 650V 8.7A TO263" ["xl"]=> string(12) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(12) "8.7A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "420 毫欧 @ 3.4A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 340µA" ["bt_vgs_sjdh"]=> string(10) "32nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "870pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(5) "83.3W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-3，D²PAK（2 引线+接片），TO-263AB" ["gysqjfz"]=> string(8) "PG-TO263" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB65R420CFD复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263
外壳：TO-263-3，D²PAK（2 引线+接片），TO-263AB
描述： MOSFET N-CH 650V 8.7A TO263
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25219 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：650V
电流-连续漏极(id)：8.7A（Tc）
Vgs(最大值)：
功率-最大值：83.3W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925219
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB65R420CFD' ) LIMIT 1
array(72) { ["id"]=> string(5) "31925" ["pdf_add"]=> string(131) "http://www.infineon.com/dgdl/IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg" ["ljbh"]=> string(17) "IPB65R310CFDTR-ND" ["zzsbh"]=> string(12) "IPB65R310CFD" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 650V 11.4A TO263" ["xl"]=> string(12) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(13) "11.4A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "310 毫欧 @ 4.4A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 400µA" ["bt_vgs_sjdh"]=> string(10) "41nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "1100pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(6) "104.2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-3，D²PAK（2 引线+接片），TO-263AB" ["gysqjfz"]=> string(8) "PG-TO263" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB65R310CFD复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263
外壳：TO-263-3，D²PAK（2 引线+接片），TO-263AB
描述： MOSFET N-CH 650V 11.4A TO263
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31925 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：650V
电流-连续漏极(id)：11.4A（Tc）
Vgs(最大值)：
功率-最大值：104.2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103931925
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB65R310CFD' ) LIMIT 1
array(72) { ["id"]=> string(5) "33055" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/DS_IPX65R190CFD__2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432fd0c54a012fded065a8309b" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg" ["ljbh"]=> string(17) "IPB65R190CFDTR-ND" ["zzsbh"]=> string(12) "IPB65R190CFD" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 650V 17.5A TO263" ["xl"]=> string(12) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(13) "17.5A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "190 毫欧 @ 7.3A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 730µA" ["bt_vgs_sjdh"]=> string(10) "68nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "1850pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "151W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-3，D²PAK（2 引线+接片），TO-263AB" ["gysqjfz"]=> string(8) "PG-TO263" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB65R190CFD复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263
外壳：TO-263-3，D²PAK（2 引线+接片），TO-263AB
描述： MOSFET N-CH 650V 17.5A TO263
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33055 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：650V
电流-连续漏极(id)：17.5A（Tc）
Vgs(最大值)：
功率-最大值：151W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103933055
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB65R190CFD' ) LIMIT 1
array(72) { ["id"]=> string(5) "33175" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/DS_IPX65R110CFD_2_61.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301306abd8e2041b1" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg" ["ljbh"]=> string(17) "IPB65R110CFDTR-ND" ["zzsbh"]=> string(12) "IPB65R110CFD" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 650V 31.2A TO263" ["xl"]=> string(12) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(13) "31.2A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(24) "110 毫欧 @ 12.7A，10V" ["bt_id_vgs_zdz"]=> string(12) "4.5V @ 1.3mA" ["bt_vgs_sjdh"]=> string(11) "118nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "3240pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(6) "277.8W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-3，D²PAK（2 引线+接片），TO-263AB" ["gysqjfz"]=> string(8) "PG-TO263" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB65R110CFD复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263
外壳：TO-263-3，D²PAK（2 引线+接片），TO-263AB
描述： MOSFET N-CH 650V 31.2A TO263
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33175 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：650V
电流-连续漏极(id)：31.2A（Tc）
Vgs(最大值)：
功率-最大值：277.8W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103933175
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB65R110CFD' ) LIMIT 1
array(72) { ["id"]=> string(3) "785" ["pdf_add"]=> string(133) "https://www.infineon.com/dgdl/IKB15N60T+Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4287d223e0a" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "IKB15N60TATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IGBT 600V 30A 130W TO263-3" ["xl"]=> string(12) "TrenchStop®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["igbtlx"]=> string(18) "沟槽型场截止" ["dy_jsjjc"]=> string(4) "600V" ["dl_jdj"]=> string(3) "30A" ["dl_jdjmc"]=> string(3) "45A" ["bt_vge_zdz"]=> string(17) "2.05V @ 15V，15A" ["gx_zdz"]=> string(4) "130W" ["kgnl"]=> string(6) "570µJ" ["sclx"]=> string(6) "标准" ["sjdh"]=> string(4) "87nC" ["td_kg_z"]=> string(10) "17ns/188ns" ["cstj"]=> string(28) "400V，15A，15 欧姆，15V" ["fxhfsj"]=> string(4) "34ns" ["gzwd"]=> string(23) "-40°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(8) "PG-TO263" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "135" ["wl_num"]=> string(4) "1045" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(16) "golon_jtg_ugbt_d" ["ch_bm"]=> string(24) "晶体管- IGBT/UGBT-单" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597909870" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["spq"]=> NULL ["moq"]=> string(2) "10" ["bz"]=> string(0) "" ["is_rohs"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_ugbt_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1045" ["parent_id"]=> string(3) "121" ["lb"]=> string(35) "晶体管 晶体管- IGBT/UGBT-单" ["action_name"]=> string(5) "jtg14" ["rate"]=> string(5) "1.186" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5360" } }
型号： IKB15N60TATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： IGBT 600V 30A 130W TO263-3
SELECT * FROM `golon_jtg_ugbt_d` WHERE ( `id` = 785 ) LIMIT 1
IGBT 类型：沟槽型场截止
电压-集射极击穿(最大值)：600V
电流-集电极(Ic)(最大值)：30A
最大功率值：130W
开关能量：570µJ
工作温度：-40°C ~ 175°C（TJ）
丝印：(请登录)
料号：1045785
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IKB15N60TATMA1' ) LIMIT 1
array(72) { ["id"]=> string(3) "808" ["pdf_add"]=> string(133) "https://www.infineon.com/dgdl/IKB06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4286b603df2" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "IKB06N60TATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "IGBT 600V 12A 88W TO263-3" ["xl"]=> string(12) "TrenchStop®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["igbtlx"]=> string(18) "沟槽型场截止" ["dy_jsjjc"]=> string(4) "600V" ["dl_jdj"]=> string(3) "12A" ["dl_jdjmc"]=> string(3) "18A" ["bt_vge_zdz"]=> string(16) "2.05V @ 15V，6A" ["gx_zdz"]=> string(3) "88W" ["kgnl"]=> string(6) "200µJ" ["sclx"]=> string(6) "标准" ["sjdh"]=> string(4) "42nC" ["td_kg_z"]=> string(9) "9ns/130ns" ["cstj"]=> string(27) "400V，6A，23 欧姆，15V" ["fxhfsj"]=> string(5) "123ns" ["gzwd"]=> string(23) "-40°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(8) "PG-TO263" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "135" ["wl_num"]=> string(4) "1045" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(16) "golon_jtg_ugbt_d" ["ch_bm"]=> string(24) "晶体管- IGBT/UGBT-单" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597909913" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["spq"]=> NULL ["moq"]=> string(2) "10" ["bz"]=> string(0) "" ["is_rohs"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_ugbt_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1045" ["parent_id"]=> string(3) "121" ["lb"]=> string(35) "晶体管 晶体管- IGBT/UGBT-单" ["action_name"]=> string(5) "jtg14" ["rate"]=> string(5) "1.186" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5360" } }
型号： IKB06N60TATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： IGBT 600V 12A 88W TO263-3
SELECT * FROM `golon_jtg_ugbt_d` WHERE ( `id` = 808 ) LIMIT 1
IGBT 类型：沟槽型场截止
电压-集射极击穿(最大值)：600V
电流-集电极(Ic)(最大值)：12A
最大功率值：88W
开关能量：200µJ
工作温度：-40°C ~ 175°C（TJ）
丝印：(请登录)
料号：1045808
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IKB06N60TATMA1' ) LIMIT 1
array(72) { ["id"]=> string(3) "822" ["pdf_add"]=> string(133) "https://www.infineon.com/dgdl/IKB10N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428742d3dfe" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "IKB10N60TATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IGBT 600V 20A 110W TO263-3" ["xl"]=> string(12) "TrenchStop®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["igbtlx"]=> string(24) "NPT，沟槽型场截止" ["dy_jsjjc"]=> string(4) "600V" ["dl_jdj"]=> string(3) "20A" ["dl_jdjmc"]=> string(3) "30A" ["bt_vge_zdz"]=> string(17) "2.05V @ 15V，10A" ["gx_zdz"]=> string(4) "110W" ["kgnl"]=> string(6) "430µJ" ["sclx"]=> string(6) "标准" ["sjdh"]=> string(4) "62nC" ["td_kg_z"]=> string(10) "12ns/215ns" ["cstj"]=> string(28) "400V，10A，23 欧姆，15V" ["fxhfsj"]=> string(5) "115ns" ["gzwd"]=> string(23) "-40°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(8) "PG-TO263" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "135" ["wl_num"]=> string(4) "1045" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(16) "golon_jtg_ugbt_d" ["ch_bm"]=> string(24) "晶体管- IGBT/UGBT-单" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597909940" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["spq"]=> NULL ["moq"]=> string(2) "10" ["bz"]=> string(0) "" ["is_rohs"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_ugbt_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1045" ["parent_id"]=> string(3) "121" ["lb"]=> string(35) "晶体管 晶体管- IGBT/UGBT-单" ["action_name"]=> string(5) "jtg14" ["rate"]=> string(5) "1.186" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5360" } }
型号： IKB10N60TATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： IGBT 600V 20A 110W TO263-3
SELECT * FROM `golon_jtg_ugbt_d` WHERE ( `id` = 822 ) LIMIT 1
IGBT 类型：NPT，沟槽型场截止
电压-集射极击穿(最大值)：600V
电流-集电极(Ic)(最大值)：20A
最大功率值：110W
开关能量：430µJ
工作温度：-40°C ~ 175°C（TJ）
丝印：(请登录)
料号：1045822
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IKB10N60TATMA1' ) LIMIT 1
array(72) { ["id"]=> string(4) "1743" ["pdf_add"]=> string(133) "https://www.infineon.com/dgdl/IKB20N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42883273e12" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "IKB20N60TATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IGBT 600V 40A 166W TO263-3" ["xl"]=> string(12) "TrenchStop®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["igbtlx"]=> string(18) "沟槽型场截止" ["dy_jsjjc"]=> string(4) "600V" ["dl_jdj"]=> string(3) "40A" ["dl_jdjmc"]=> string(3) "60A" ["bt_vge_zdz"]=> string(17) "2.05V @ 15V，20A" ["gx_zdz"]=> string(4) "166W" ["kgnl"]=> string(6) "770µJ" ["sclx"]=> string(6) "标准" ["sjdh"]=> string(5) "120nC" ["td_kg_z"]=> string(10) "18ns/199ns" ["cstj"]=> string(28) "400V，20A，12 欧姆，15V" ["fxhfsj"]=> string(4) "41ns" ["gzwd"]=> string(23) "-40°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(8) "PG-TO263" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "135" ["wl_num"]=> string(4) "1045" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(16) "golon_jtg_ugbt_d" ["ch_bm"]=> string(24) "晶体管- IGBT/UGBT-单" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597910493" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["spq"]=> NULL ["moq"]=> string(2) "10" ["bz"]=> string(0) "" ["is_rohs"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_ugbt_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1045" ["parent_id"]=> string(3) "121" ["lb"]=> string(35) "晶体管 晶体管- IGBT/UGBT-单" ["action_name"]=> string(5) "jtg14" ["rate"]=> string(5) "1.186" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5360" } }
型号： IKB20N60TATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： IGBT 600V 40A 166W TO263-3
SELECT * FROM `golon_jtg_ugbt_d` WHERE ( `id` = 1743 ) LIMIT 1
IGBT 类型：沟槽型场截止
电压-集射极击穿(最大值)：600V
电流-集电极(Ic)(最大值)：40A
最大功率值：166W
开关能量：770µJ
工作温度：-40°C ~ 175°C（TJ）
丝印：(请登录)
料号：10451743
量大可议价
起订量:10 修改
包装量: 修改
个
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IKB20N60TATMA1' ) LIMIT 1

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