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array(72) { ["id"]=> string(5) "46530" ["pdf_add"]=> string(107) "https://www.infineon.com/dgdl/Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(58) "//media.digikey.com/Renders/Infineon%20Renders/TO252-3.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "IPD60R1K5CEAUMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 650V 5A TO252" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(10) "5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "1.5 欧姆 @ 1.1A，10V" ["bt_id_vgs_zdz"]=> string(12) "3.5V @ 90µA" ["bt_vgs_sjdh"]=> string(11) "9.4nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "200pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "49W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "PG-TO252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607649889" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R1K5CEAUMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 650V 5A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46530 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：5A（Tc）
Vgs(最大值)：±20V
功率-最大值：49W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946530
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R1K5CEAUMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "46634" ["pdf_add"]=> string(69) "https://www.infineon.com/dgdl?fileId=db3a3043382e83730138514ff7881004" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(58) "//media.digikey.com/Renders/Infineon%20Renders/TO252-3.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "IPD50R500CEAUMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 550V 7.6A TO252" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "550V" ["dl_lxlj"]=> string(12) "7.6A（Tc）" ["qddy"]=> string(3) "13V" ["bt_id_vgs_rds"]=> string(23) "500 毫欧 @ 2.3A，13V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 200µA" ["bt_vgs_sjdh"]=> string(12) "18.7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "433pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "57W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "PG-TO252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607650317" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD50R500CEAUMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 550V 7.6A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46634 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：550V
电流-连续漏极(id)：7.6A（Tc）
Vgs(最大值)：±20V
功率-最大值：57W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946634
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD50R500CEAUMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "46741" ["pdf_add"]=> string(107) "https://www.infineon.com/dgdl/Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(75) "https://media.digikey.com/renders/Infineon%20Renders/448;PPG-TO252-2;;2.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "IPD60R400CEAUMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 600V 14.7A TO252" ["xl"]=> string(13) "CoolMOS™ CE" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(13) "14.7A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "400 毫欧 @ 3.8A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 300µA" ["bt_vgs_sjdh"]=> string(10) "32nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "700pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "112W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "PG-TO252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607650910" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R400CEAUMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 600V 14.7A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46741 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：14.7A（Tc）
Vgs(最大值)：±20V
功率-最大值：112W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946741
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R400CEAUMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "46882" ["pdf_add"]=> string(107) "https://www.infineon.com/dgdl/Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(58) "//media.digikey.com/Renders/Infineon%20Renders/TO252-3.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "IPD50R280CEAUMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 550V 18.1A TO252" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "550V" ["dl_lxlj"]=> string(11) "13A（Ta）" ["qddy"]=> string(3) "13V" ["bt_id_vgs_rds"]=> string(23) "280 毫欧 @ 4.2A，13V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 350µA" ["bt_vgs_sjdh"]=> string(12) "32.6nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "773pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "119W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "PG-TO252" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607651592" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD50R280CEAUMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO252
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 550V 18.1A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46882 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：550V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：119W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946882
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD50R280CEAUMA1' ) LIMIT 1

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