封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(72) { ["id"]=> string(3) "813" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSO110N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d7412447e2b" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(22) "BSO110N03MSGXUMA1TR-ND" ["zzsbh"]=> string(17) "BSO110N03MSGXUMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 10A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "10A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(23) "11 毫欧 @ 12.1A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "20nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1500pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO110N03MSGXUMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 10A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 813 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):10A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039813
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO110N03MSGXUMA1' ) LIMIT 1
array(72) { ["id"]=> string(3) "845" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSO080P03NS3E_G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043284aacd801286d7c81ec296e" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(24) "BSO080P03NS3EGXUMA1TR-ND" ["zzsbh"]=> string(19) "BSO080P03NS3EGXUMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET P-CH 30V 12A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "12A(Ta)" ["qddy"]=> string(8) "6V,10V" ["bt_id_vgs_rds"]=> string(22) "8 毫欧 @ 14.8A,10V" ["bt_id_vgs_zdz"]=> string(13) "3.1V @ 150µA" ["bt_vgs_sjdh"]=> string(10) "81nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "6750pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO080P03NS3EGXUMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET P-CH 30V 12A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 845 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):12A(Ta)
Vgs(最大值):±25V
功率-最大值:1.6W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039845
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO080P03NS3EGXUMA1' ) LIMIT 1
array(72) { ["id"]=> string(3) "849" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSO080P03NS3_G_2.2.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043284aacd801286d7aee12296a" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(23) "BSO080P03NS3GXUMA1TR-ND" ["zzsbh"]=> string(18) "BSO080P03NS3GXUMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET P-CH 30V 12A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "12A(Ta)" ["qddy"]=> string(8) "6V,10V" ["bt_id_vgs_rds"]=> string(22) "8 毫欧 @ 14.8A,10V" ["bt_id_vgs_zdz"]=> string(13) "3.1V @ 150µA" ["bt_vgs_sjdh"]=> string(10) "81nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "6750pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO080P03NS3GXUMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET P-CH 30V 12A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 849 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):12A(Ta)
Vgs(最大值):±25V
功率-最大值:1.6W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039849
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO080P03NS3GXUMA1' ) LIMIT 1
array(72) { ["id"]=> string(3) "852" ["pdf_add"]=> string(132) "http://www.infineon.com/dgdl/BSO200P03S_Rev1.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b42b596d0a5a" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(21) "BSO200P03SHXUMA1TR-ND" ["zzsbh"]=> string(16) "BSO200P03SHXUMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 30V 7.4A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "7.4A(Ta)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "20 毫欧 @ 9.1A,10V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "54nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "2330pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO200P03SHXUMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET P-CH 30V 7.4A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 852 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):7.4A(Ta)
Vgs(最大值):±25V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039852
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO200P03SHXUMA1' ) LIMIT 1
array(72) { ["id"]=> string(3) "883" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSO040N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d4dfc657dd7" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(22) "BSO040N03MSGXUMA1TR-ND" ["zzsbh"]=> string(17) "BSO040N03MSGXUMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 16A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "16A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(20) "4 毫欧 @ 20A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "73nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5700pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO040N03MSGXUMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 16A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 883 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):16A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039883
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO040N03MSGXUMA1' ) LIMIT 1
array(72) { ["id"]=> string(3) "904" ["pdf_add"]=> string(130) "http://www.infineon.com/dgdl/BSO303SP_Rev1+1.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304326c2768b0126d1e691ec6884" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(19) "BSO303SPHXUMA1TR-ND" ["zzsbh"]=> string(14) "BSO303SPHXUMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 30V 7.2A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "7.2A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "21 毫欧 @ 9.1A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "54nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2330pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO303SPHXUMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET P-CH 30V 7.2A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 904 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):7.2A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039904
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO303SPHXUMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "11437" ["pdf_add"]=> string(73) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO301SP_170702.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "BSO301SPNTMA1TR-ND" ["zzsbh"]=> string(13) "BSO301SPNTMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 30V 12.6A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(13) "12.6A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "8 毫欧 @ 14.9A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "136nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5890pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.5W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO301SPNTMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET P-CH 30V 12.6A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11437 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):12.6A(Ta)
Vgs(最大值):±20V
功率-最大值:2.5W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103911437
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO301SPNTMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "13230" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO052N03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(17) "BSO052N03SINTR-ND" ["zzsbh"]=> string(10) "BSO052N03S" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 14A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "14A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "5.2 毫欧 @ 17A,10V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 70µA" ["bt_vgs_sjdh"]=> string(9) "43nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5530pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO052N03S复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 14A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13230 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):14A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913230
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO052N03S' ) LIMIT 1
array(72) { ["id"]=> string(5) "13233" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO072N03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(17) "BSO072N03SINTR-ND" ["zzsbh"]=> string(10) "BSO072N03S" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 12A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "12A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "6.8 毫欧 @ 15A,10V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 45µA" ["bt_vgs_sjdh"]=> string(9) "25nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3230pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO072N03S复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 12A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13233 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):12A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913233
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO072N03S' ) LIMIT 1
array(72) { ["id"]=> string(5) "13236" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO119N03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(17) "BSO119N03SINTR-ND" ["zzsbh"]=> string(10) "BSO119N03S" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(23) "MOSFET N-CH 30V 9A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "9A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(23) "11.9 毫欧 @ 11A,10V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 25µA" ["bt_vgs_sjdh"]=> string(9) "13nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1730pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO119N03S复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 9A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13236 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):9A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913236
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO119N03S' ) LIMIT 1
array(72) { ["id"]=> string(5) "13239" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO200N03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(17) "BSO200N03SINTR-ND" ["zzsbh"]=> string(10) "BSO200N03S" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(23) "MOSFET N-CH 30V 7A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "7A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "20 毫欧 @ 8.8A,10V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 10µA" ["bt_vgs_sjdh"]=> string(10) "6.5nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "840pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO200N03S复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 7A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13239 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):7A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913239
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO200N03S' ) LIMIT 1
array(72) { ["id"]=> string(5) "13242" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO300N03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(17) "BSO300N03SINTR-ND" ["zzsbh"]=> string(10) "BSO300N03S" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 5.7A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "5.7A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "30 毫欧 @ 7.2A,10V" ["bt_id_vgs_zdz"]=> string(9) "2V @ 8µA" ["bt_vgs_sjdh"]=> string(10) "4.6nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "600pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO300N03S复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 5.7A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13242 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):5.7A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913242
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO300N03S' ) LIMIT 1
array(72) { ["id"]=> string(5) "13839" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO064N03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(13) "BSO064N03S-ND" ["zzsbh"]=> string(10) "BSO064N03S" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 12A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "12A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "6.4 毫欧 @ 16A,10V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 50µA" ["bt_vgs_sjdh"]=> string(9) "28nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3620pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO064N03S复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 12A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13839 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):12A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913839
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO064N03S' ) LIMIT 1
array(72) { ["id"]=> string(5) "13840" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO094N03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(13) "BSO094N03S-ND" ["zzsbh"]=> string(10) "BSO094N03S" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 10A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "10A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "9.1 毫欧 @ 13A,10V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 30µA" ["bt_vgs_sjdh"]=> string(9) "18nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2300pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO094N03S复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 10A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13840 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):10A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913840
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO094N03S' ) LIMIT 1
array(72) { ["id"]=> string(5) "13841" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO104N03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(13) "BSO104N03S-ND" ["zzsbh"]=> string(10) "BSO104N03S" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 10A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "10A(Tc)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "9.7 毫欧 @ 13A,10V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 30µA" ["bt_vgs_sjdh"]=> string(9) "16nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2130pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO104N03S复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 10A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13841 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):10A(Tc)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913841
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO104N03S' ) LIMIT 1
array(72) { ["id"]=> string(5) "13843" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO200P03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(20) "BSO200P03SNTMA1TR-ND" ["zzsbh"]=> string(15) "BSO200P03SNTMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 30V 7.4A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "7.4A(Ta)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "20 毫欧 @ 9.1A,10V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "54nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "2330pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO200P03SNTMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET P-CH 30V 7.4A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13843 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):7.4A(Ta)
Vgs(最大值):±25V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913843
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO200P03SNTMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "13844" ["pdf_add"]=> string(131) "http://www.infineon.com/dgdl/BSO613SPV_Rev1.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ae038440c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(12) "BSO613SPV-ND" ["zzsbh"]=> string(9) "BSO613SPV" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 60V 3.44A 8DSO" ["xl"]=> string(8) "SIPMOS®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(13) "3.44A(Ta)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "130 毫欧 @ 3.44A,10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "30nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "875pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.5W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO613SPV复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET P-CH 60V 3.44A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13844 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):60V
电流-连续漏极(id):3.44A(Ta)
Vgs(最大值):±20V
功率-最大值:2.5W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103913844
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO613SPV' ) LIMIT 1
array(72) { ["id"]=> string(5) "19633" ["pdf_add"]=> string(71) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO130N03MS_G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(22) "BSO130N03MSGXUMA1TR-ND" ["zzsbh"]=> string(17) "BSO130N03MSGXUMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(23) "MOSFET N-CH 30V 9A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "9A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(23) "13 毫欧 @ 11.1A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "17nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1300pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO130N03MSGXUMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 9A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19633 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):9A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103919633
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO130N03MSGXUMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "19666" ["pdf_add"]=> string(68) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO080P03S.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(20) "BSO080P03SNTMA1TR-ND" ["zzsbh"]=> string(15) "BSO080P03SNTMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 30V 12.6A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(13) "12.6A(Ta)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "8 毫欧 @ 14.9A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "136nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "5890pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.79W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO080P03SNTMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET P-CH 30V 12.6A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19666 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):12.6A(Ta)
Vgs(最大值):±25V
功率-最大值:1.79W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103919666
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO080P03SNTMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "19669" ["pdf_add"]=> string(71) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/BSO220N03MS_G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(22) "BSO220N03MSGXUMA1TR-ND" ["zzsbh"]=> string(17) "BSO220N03MSGXUMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(23) "MOSFET N-CH 30V 7A 8DSO" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "7A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "22 毫欧 @ 8.6A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.1V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "10.4nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "800pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "1.56W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSO220N03MSGXUMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:PG-DSO-8
外壳:8-SOIC(宽3.9mm p1.27mm)
描述: MOSFET N-CH 30V 7A 8DSO
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19669 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):7A(Ta)
Vgs(最大值):±20V
功率-最大值:1.56W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103919669
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO220N03MSGXUMA1' ) LIMIT 1

辰科物联

https://www.chenkeiot.com/

已成功加入购物车!
复制成功
销售在线 销售在线 工程师在线 工程师在线 电话咨询

销售在线

刘s:2355289363

手机: 15074164838

销售在线

陈s:2355289368

手机: 13510573285

工程师在线

吴工:2355289360

手机: 13824329149

工程师在线

陈工:2355289365

手机: 15818753382

电话咨询

0755-28435922