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array(68) { ["id"]=> string(3) "833" ["pdf_add"]=> string(87) "//media.digikey.com/pdf/Data%20Sheets/Vishay%20Semiconductors/VS-20UT04,VS-20WT04FN.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(77) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/TO-251-3_StubLeads.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Renders/Fairchild_Semi_Renders/TO-251-3_StubLeads.jpg" ["ljbh"]=> string(12) "VS-20UT04-ND" ["zzsbh"]=> string(9) "VS-20UT04" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "DIODE SCHOTTKY 45V 20A IPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ejglx"]=> string(9) "肖特基" ["dy_dc"]=> string(84) "" ["dl_pjzl"]=> string(3) "20A" ["bt_if"]=> string(11) "610mV @ 20A" ["sd"]=> string(39) "快速恢复 =< 500ns，> 200mA（Io）" ["fxhfsj"]=> string(39) "快速恢复 =< 500ns，> 200mA（Io）" ["bt_vr_dl_fx"]=> string(12) "100µA @ 45V" ["bt_vr_dr"]=> string(18) "1900pF @ 5V，1MHz" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(28) "TO-251-3 短截引线，IPAK" ["gysqjfz"]=> string(16) "IPAK（TO-251）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gzwd"]=> string(11) "-55°C ~ 15" ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "3" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "115" ["wl_num"]=> string(4) "1026" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(15) "golon_ejg_zlq_d" ["ch_bm"]=> string(26) "二极管-整流器-单路" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ejg_zlq_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1026" ["parent_id"]=> string(3) "112" ["lb"]=> string(37) "二极管 二极管-整流器-单路" ["action_name"]=> string(2) "e3" ["rate"]=> string(4) "1.18" ["rate_hot"]=> string(2) "45" ["moq_rate"]=> string(6) "1.6300" } }
型号： VS-20UT04复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：IPAK（TO-251）
外壳：TO-251-3 短截引线，IPAK
描述： DIODE SCHOTTKY 45V 20A IPAK
SELECT * FROM `golon_ejg_zlq_d` WHERE ( `id` = 833 ) LIMIT 1
二极管类型：肖特基
DC最大反向电压(Vr)：
平均整流电流(io)：20A
不同if时电压-正向(vf)：610mV @ 20A
速度：快速恢复 =< 500ns，> 200mA（Io）
反向恢复时间(trr)：快速恢复 =< 500ns，> 200mA（Io）
不同vr的电流-反向漏电流：100µA @ 45V
工作温度-结：-55°C ~ 15
丝印：(请登录)
料号：1026833
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'VS-20UT04' ) LIMIT 1
array(72) { ["id"]=> string(4) "5815" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/91548/sihu6n62e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(73) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;5968;U;3.jpg" ["images"]=> string(91) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/742;5968;U;3.jpg" ["ljbh"]=> string(16) "SIHU6N62E-GE3-ND" ["zzsbh"]=> string(13) "SIHU6N62E-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 620V 6A TO-251" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "620V" ["dl_lxlj"]=> string(10) "6A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "900 毫欧 @ 3A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "34nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "578pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "78W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(36) "TO-251-3 短引线，IPak，TO-251AA" ["gysqjfz"]=> string(16) "IPAK（TO-251）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHU6N62E-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：IPAK（TO-251）
外壳：TO-251-3 短引线，IPak，TO-251AA
描述： MOSFET N-CH 620V 6A TO-251
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5815 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：620V
电流-连续漏极(id)：6A（Tc）
Vgs(最大值)：±30V
功率-最大值：78W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395815
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHU6N62E-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "25370" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/91545/sihu6n65e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;IPAK(TO-251-3);;3.jpg" ["images"]=> string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/742;IPAK(TO-251-3);;3.jpg" ["ljbh"]=> string(16) "SIHU6N65E-GE3-ND" ["zzsbh"]=> string(13) "SIHU6N65E-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 650V 6A IPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(10) "7A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "600 毫欧 @ 3A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "48nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "820pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "78W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(36) "TO-251-3 长引线，IPak，TO-251AB" ["gysqjfz"]=> string(16) "IPAK（TO-251）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHU6N65E-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：IPAK（TO-251）
外壳：TO-251-3 长引线，IPak，TO-251AB
描述： MOSFET N-CH 650V 6A IPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25370 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±30V
功率-最大值：78W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103925370
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHU6N65E-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46077" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/91986/sihu2n80e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(73) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;5968;U;3.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(13) "SIHU2N80E-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 800V 2.8A IPAK" ["xl"]=> string(1) "E" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(12) "2.8A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.75 欧姆 @ 1A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "19.6nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "315pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "62.5W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(36) "TO-251-3 长引线，IPak，TO-251AB" ["gysqjfz"]=> string(16) "IPAK（TO-251）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593987" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHU2N80E-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：IPAK（TO-251）
外壳：TO-251-3 长引线，IPak，TO-251AB
描述： MOSFET N-CH 800V 2.8A IPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46077 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：2.8A（Tc）
Vgs(最大值)：±30V
功率-最大值：62.5W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946077
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHU2N80E-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46078" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/92018/sihu4n80e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;IPAK(TO-251-3);;3.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "SIHU4N80AE-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 800V 4.3A IPAK" ["xl"]=> string(1) "E" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(12) "4.3A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "1.27 欧姆 @ 2A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "32nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "622pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "69W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(36) "TO-251-3 长引线，IPak，TO-251AB" ["gysqjfz"]=> string(16) "IPAK（TO-251）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593988" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHU4N80AE-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：IPAK（TO-251）
外壳：TO-251-3 长引线，IPak，TO-251AB
描述： MOSFET N-CH 800V 4.3A IPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46078 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：4.3A（Tc）
Vgs(最大值)：±30V
功率-最大值：69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946078
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHU4N80AE-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "46104" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/92011/sihu6n80e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;IPAK(TO-251-3);;3.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(13) "SIHU6N80E-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CHAN 800V TO-251" ["xl"]=> string(1) "E" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(12) "5.4A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "940 毫欧 @ 3A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "44nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "827pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "78W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(36) "TO-251-3 长引线，IPak，TO-251AB" ["gysqjfz"]=> string(16) "IPAK（TO-251）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607594078" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHU6N80E-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：IPAK（TO-251）
外壳：TO-251-3 长引线，IPak，TO-251AB
描述： MOSFET N-CHAN 800V TO-251
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46104 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：5.4A（Tc）
Vgs(最大值)：±30V
功率-最大值：78W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946104
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHU6N80E-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "49698" ["pdf_add"]=> string(48) "https://www.vishay.com/docs/91615/sihu3n50da.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "SIHU3N50DA-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CHANNEL 500V 3A IPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "500V" ["dl_lxlj"]=> string(10) "3A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "3.2 欧姆 @ 1.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "12nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "177pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "69W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(36) "TO-251-3 长引线，IPak，TO-251AB" ["gysqjfz"]=> string(16) "IPAK（TO-251）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607934113" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHU3N50DA-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：IPAK（TO-251）
外壳：TO-251-3 长引线，IPak，TO-251AB
描述： MOSFET N-CHANNEL 500V 3A IPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49698 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：500V
电流-连续漏极(id)：3A（Tc）
Vgs(最大值)：±30V
功率-最大值：69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103949698
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHU3N50DA-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "49965" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/92018/sihu4n80e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;IPAK(TO-251-3);;3.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(13) "SIHU4N80E-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CHAN 800V TO-251" ["xl"]=> string(1) "E" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(12) "4.3A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "1.27 欧姆 @ 2A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "32nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "622pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "69W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(36) "TO-251-3 长引线，IPak，TO-251AB" ["gysqjfz"]=> string(16) "IPAK（TO-251）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607934484" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHU4N80E-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：IPAK（TO-251）
外壳：TO-251-3 长引线，IPak，TO-251AB
描述： MOSFET N-CHAN 800V TO-251
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49965 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：4.3A（Tc）
Vgs(最大值)：±30V
功率-最大值：69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103949965
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHU4N80E-GE3' ) LIMIT 1

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