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array(72) { ["id"]=> string(4) "6879" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/group3/5e/ac/d2/a0/5d/48/4e/a3/DM00170798/files/DM00170798.pdf/jcr:content/transla" ["images_sw"]=> string(1) " " ["images_mk"]=> string(61) "//media.digikey.com/Renders/STMicro%20Renders/STW54NM65ND.jpg" ["images"]=> string(81) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/STW54NM65ND.jpg" ["ljbh"]=> string(14) "497-16597-5-ND" ["zzsbh"]=> string(9) "SCT10N120" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "5" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 1.2KV TO247-3" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(21) "690 毫欧 @ 6A，20V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "22nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(12) "290pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "150W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCT10N120复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： MOSFET N-CH 1.2KV TO247-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6879 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：150W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：10396879
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCT10N120' ) LIMIT 1
array(72) { ["id"]=> string(4) "6893" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/d6/55/ae/e7/3a/4b/4b/a9/DM00207082.pdf/files/DM00207082.pdf/jcr:content/translatio" ["images_sw"]=> string(1) " " ["images_mk"]=> string(61) "//media.digikey.com/Renders/STMicro%20Renders/STW54NM65ND.jpg" ["images"]=> string(81) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/STW54NM65ND.jpg" ["ljbh"]=> string(14) "497-16598-5-ND" ["zzsbh"]=> string(9) "SCT50N120" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 1.2KV TO247-3" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "65A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(21) "69 毫欧 @ 40A，20V" ["bt_id_vgs_zdz"]=> string(8) "3V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "122nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(13) "1900pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "318W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCT50N120复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： MOSFET N-CH 1.2KV TO247-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6893 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：65A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：318W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：10396893
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCT50N120' ) LIMIT 1
array(72) { ["id"]=> string(5) "28696" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00053079.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(61) "//media.digikey.com/Renders/STMicro%20Renders/STW54NM65ND.jpg" ["images"]=> string(81) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/STW54NM65ND.jpg" ["ljbh"]=> string(12) "497-14960-ND" ["zzsbh"]=> string(9) "SCT30N120" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "209" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 1200V 45A HIP247" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "40A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(22) "100 毫欧 @ 20A，20V" ["bt_id_vgs_zdz"]=> string(22) "2.6V @ 1mA（标准）" ["bt_vgs_sjdh"]=> string(11) "105nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(13) "1700pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "270W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCT30N120复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： MOSFET N-CH 1200V 45A HIP247
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 28696 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：270W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103928696
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCT30N120' ) LIMIT 1
array(72) { ["id"]=> string(5) "33208" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00118513.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(61) "//media.digikey.com/Renders/STMicro%20Renders/STW54NM65ND.jpg" ["images"]=> string(81) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/STW54NM65ND.jpg" ["ljbh"]=> string(12) "497-15170-ND" ["zzsbh"]=> string(9) "SCT20N120" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "654" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 1200V 20A HIP247" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "20A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(22) "290 毫欧 @ 10A，20V" ["bt_id_vgs_zdz"]=> string(10) "3.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(12) "650pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "175W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCT20N120复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： MOSFET N-CH 1200V 20A HIP247
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33208 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：20A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：175W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103933208
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCT20N120' ) LIMIT 1
array(72) { ["id"]=> string(5) "46400" ["pdf_add"]=> string(56) "https://www.st.com/resource/en/datasheet/sct10n120ag.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "SCT10N120AG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(21) "690 毫欧 @ 6A，20V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "22nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(12) "290pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "150W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607595819" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCT10N120AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： AUTOMOTIVE-GRADE SILICON CARBIDE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46400 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：150W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103946400
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCT10N120AG' ) LIMIT 1
array(72) { ["id"]=> string(5) "46418" ["pdf_add"]=> string(57) "https://www.st.com/resource/en/datasheet/sctw35n65g2v.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "SCTW35N65G2V" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "SILICON CARBIDE POWER MOSFET 650" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "45A（Tc）" ["qddy"]=> string(9) "18V，20V" ["bt_id_vgs_rds"]=> string(20) "67毫欧 @ 20A，20V" ["bt_id_vgs_zdz"]=> string(8) "5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "73nC @ 20V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "1370pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "240W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607595840" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTW35N65G2V复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： SILICON CARBIDE POWER MOSFET 650
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46418 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：240W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103946418
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTW35N65G2V' ) LIMIT 1
array(72) { ["id"]=> string(5) "46425" ["pdf_add"]=> string(56) "https://www.st.com/resource/en/datasheet/sct20n120ag.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "SCT20N120AG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "20A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(21) "239毫欧 @ 10A，20V" ["bt_id_vgs_zdz"]=> string(10) "3.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(12) "650pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "153W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607595841" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCT20N120AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： AUTOMOTIVE-GRADE SILICON CARBIDE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46425 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：20A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：153W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103946425
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCT20N120AG' ) LIMIT 1
array(72) { ["id"]=> string(5) "46428" ["pdf_add"]=> string(60) "https://www.st.com/resource/en/datasheet/sctw40n120g2vag.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SCTW40N120G2VAG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "33A（Tc）" ["qddy"]=> string(3) "18V" ["bt_id_vgs_rds"]=> string(21) "105毫欧 @ 20A，18V" ["bt_id_vgs_zdz"]=> string(8) "5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "63nC @ 18V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "1230pF @ 800V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "290W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607595850" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTW40N120G2VAG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： AUTOMOTIVE-GRADE SILICON CARBIDE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46428 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：33A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：290W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103946428
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTW40N120G2VAG' ) LIMIT 1
array(72) { ["id"]=> string(5) "46437" ["pdf_add"]=> string(173) "http://www.st.com/content/ccc/resource/technical/document/datasheet/group3/ed/c3/36/02/67/0f/46/f4/DM00301829/files/DM00301829.pdf/jcr:content/translations/en.DM00301829.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "SCTWA50N120" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 1200V 65A HIP247" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "65A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(21) "69 毫欧 @ 40A，20V" ["bt_id_vgs_zdz"]=> string(8) "3V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "122nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(13) "1900pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "318W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607595861" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTWA50N120复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： MOSFET N-CH 1200V 65A HIP247
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46437 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：65A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：318W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103946437
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTWA50N120' ) LIMIT 1
array(72) { ["id"]=> string(5) "48627" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "SCT20N120H" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(18) "PTD WBG & POWER RF" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "20A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(22) "290 毫欧 @ 10A，20V" ["bt_id_vgs_zdz"]=> string(10) "3.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(12) "650pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "175W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607931249" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCT20N120H复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： PTD WBG & POWER RF
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48627 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：20A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：175W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103948627
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCT20N120H' ) LIMIT 1
array(72) { ["id"]=> string(5) "50902" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "SCT30N120H" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(18) "PTD WBG & POWER RF" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "40A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(22) "100 毫欧 @ 20A，20V" ["bt_id_vgs_zdz"]=> string(10) "3.5V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "105nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(13) "1700pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "270W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935889" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCT30N120H复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： PTD WBG & POWER RF
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50902 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：270W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103950902
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCT30N120H' ) LIMIT 1
array(72) { ["id"]=> string(5) "50904" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "SCT30N120D2" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(18) "PTD WBG & POWER RF" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "40A（Tc）" ["qddy"]=> string(3) "20V" ["bt_id_vgs_rds"]=> string(22) "100 毫欧 @ 20A，20V" ["bt_id_vgs_zdz"]=> string(10) "3.5V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "105nC @ 20V" ["vgs_zdz"]=> string(11) "+25V，-10V" ["bt_vds_srdr"]=> string(13) "1700pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "270W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935889" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCT30N120D2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： PTD WBG & POWER RF
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50904 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：+25V，-10V
功率-最大值：270W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103950904
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCT30N120D2' ) LIMIT 1
array(72) { ["id"]=> string(5) "50907" ["pdf_add"]=> string(59) "https://www.st.com/resource/en/datasheet/sctw35n65g2vag.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "SCTW35N65G2VAG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "45A（Tc）" ["qddy"]=> string(9) "18V，20V" ["bt_id_vgs_rds"]=> string(20) "67毫欧 @ 20A，20V" ["bt_id_vgs_zdz"]=> string(8) "5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "73nC @ 20V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "1370pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "240W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935899" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTW35N65G2VAG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： AUTOMOTIVE-GRADE SILICON CARBIDE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50907 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：240W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103950907
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTW35N65G2VAG' ) LIMIT 1
array(72) { ["id"]=> string(5) "50916" ["pdf_add"]=> string(57) "https://www.st.com/resource/en/datasheet/sctw90n65g2v.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "SCTW90N65G2V" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "SILICON CARBIDE POWER MOSFET 650" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "90A（Tc）" ["qddy"]=> string(3) "18V" ["bt_id_vgs_rds"]=> string(21) "25 毫欧 @ 50A，18V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "157nC @ 18V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "3300pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "390W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935901" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTW90N65G2V复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： SILICON CARBIDE POWER MOSFET 650
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50916 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：90A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：390W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103950916
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTW90N65G2V' ) LIMIT 1
array(72) { ["id"]=> string(5) "50917" ["pdf_add"]=> string(59) "https://www.st.com/resource/en/datasheet/sctw100n65g2ag.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "//media.digikey.com/Renders/STMicro%20Renders/TO-247-3-HiP.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "SCTW100N65G2AG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(12) "100A（Tc）" ["qddy"]=> string(3) "18V" ["bt_id_vgs_rds"]=> string(21) "26 毫欧 @ 50A，18V" ["bt_id_vgs_zdz"]=> string(8) "5V @ 5mA" ["bt_vgs_sjdh"]=> string(11) "162nC @ 18V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "3315pF @ 520V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "420W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935901" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTW100N65G2AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： AUTOMOTIVE-GRADE SILICON CARBIDE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50917 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：420W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103950917
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTW100N65G2AG' ) LIMIT 1
array(72) { ["id"]=> string(5) "50921" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(13) "SCTW70N120G2V" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "SILICON CARBIDE POWER MOSFET 120" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(30) "SiC（碳化硅结晶体管）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "91A（Tc）" ["qddy"]=> string(3) "18V" ["bt_id_vgs_rds"]=> string(21) "30 毫欧 @ 50A，18V" ["bt_id_vgs_zdz"]=> string(10) "4.9V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "150nC @ 18V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "3540pF @ 800V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "547W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 200°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(8) "TO-247-3" ["gysqjfz"]=> string(9) "HiP247™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935911" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTW70N120G2V复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：HiP247™
外壳：TO-247-3
描述： SILICON CARBIDE POWER MOSFET 120
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50921 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：91A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：547W（Tc）
工作温度：-55°C ~ 200°C（TJ）
丝印：(请登录)
料号：103950921
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTW70N120G2V' ) LIMIT 1

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