array(74) {
["id"]=>
string(2) "88"
["pdf_add"]=>
string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/ee/c8/b0/29/66/7c/4e/fe/CD00149569.pdf/files/CD00149569.pdf/jcr:content/translatio"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG"
["images"]=>
string(78) "https://www.chenkeiot.com/Public/imagesmk/Photos/STMicro_Photos/H%C2%B2PAK.JPG"
["images_dir"]=>
string(31) "./images/1039/STH310N10F7-2.JPG"
["ljbh"]=>
string(14) "497-13876-2-ND"
["zzsbh"]=>
string(10) "STH3N150-2"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(4) "2000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CH 1500V 2.5A H2PAK-2"
["xl"]=>
string(12) "PowerMESH™"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(5) "1500V"
["dl_lxlj"]=>
string(12) "2.5A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "9 欧姆 @ 1.3A，10V"
["bt_id_vgs_zdz"]=>
string(11) "5V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "29.3nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(11) "939pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "140W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(46) "TO-263-3，D²Pak（2 引线 + 凸片）变型"
["gysqjfz"]=>
string(6) "H²PAK"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H²PAK
外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型
描述：
MOSFET N-CH 1500V 2.5A H2PAK-2
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 88 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1500V
电流-连续漏极(id)：2.5A（Tc）
Vgs(最大值)：±30V
功率-最大值：140W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH3N150-2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32521"
["pdf_add"]=>
string(174) "https://www.st.com/content/ccc/resource/technical/document/datasheet/group3/4b/2e/7d/2b/71/62/47/48/DM00033653/files/DM00033653.pdf/jcr:content/translations/en.DM00033653.pdf"
["pdf_dir"]=>
string(34) "./datasheet/1039/en.DM00033653.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(65) "//media.digikey.com/Renders/STMicro%20Renders/STRIPFET-TO2637.jpg"
["images"]=>
string(79) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/406/STRIPFET-TO2637.jpg"
["images_dir"]=>
string(30) "./images/1039/STH260N6F6-6.jpg"
["ljbh"]=>
string(14) "497-12255-2-ND"
["zzsbh"]=>
string(13) "STH300NH02L-6"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "15.475030"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 24V 180A H2PAK-6"
["xl"]=>
string(37) "Automotive, AEC-Q101, STripFET™ III"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "24V"
["dl_lxlj"]=>
string(12) "180A（Tc）"
["qddy"]=>
string(8) "5V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.2 毫欧 @ 80A，10V"
["bt_id_vgs_zdz"]=>
string(11) "1V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "109nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "7050pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "300W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(40) "TO-263-7，D²Pak（6 引线 + 接片）"
["gysqjfz"]=>
string(6) "H²PAK"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "7"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H²PAK
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述：
MOSFET N-CH 24V 180A H2PAK-6
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32521 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：24V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥23.14
1000+:
￥17.72
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH300NH02L-6' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32649"
["pdf_add"]=>
string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/f7/7d/73/08/fd/08/4b/b2/DM00076403.pdf/files/DM00076403.pdf/jcr:content/translations/en.DM00076403.pdf"
["pdf_dir"]=>
string(34) "./datasheet/1039/en.DM00076403.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Photos/STMicro%20Photos/STH320N4F6-2.JPG"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/1261/STH320N4F6-2.JPG"
["images_dir"]=>
string(30) "./images/1039/STH320N4F6-2.JPG"
["ljbh"]=>
string(14) "497-13875-2-ND"
["zzsbh"]=>
string(12) "STH320N4F6-2"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "18.605960"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 40V 200A H2PAK-2"
["xl"]=>
string(49) "Automotive, AEC-Q101, DeepGATE™, STripFET™ VI"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "200A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "1.3 毫欧 @ 80A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "240nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "13800pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "300W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(46) "TO-263-3，D²Pak（2 引线 + 凸片）变型"
["gysqjfz"]=>
string(6) "H²PAK"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H²PAK
外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型
描述：
MOSFET N-CH 40V 200A H2PAK-2
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32649 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：200A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥27.82
1000+:
￥21.30
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH320N4F6-2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32661"
["pdf_add"]=>
string(0) ""
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2435/D%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(29) "./images/1039/APT80SM120S.jpg"
["ljbh"]=>
string(14) "497-13773-2-ND"
["zzsbh"]=>
string(12) "STH270N4F3-2"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "13.016560"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 40V 180A H2PAK-2"
["xl"]=>
string(37) "Automotive, AEC-Q101, STripFET™ III"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "180A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "1.7 毫欧 @ 80A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "150nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "7400pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "300W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(46) "TO-263-3，D²Pak（2 引线 + 凸片）变型"
["gysqjfz"]=>
string(6) "H²PAK"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H²PAK
外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型
描述：
MOSFET N-CH 40V 180A H2PAK-2
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32661 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥19.46
1000+:
￥14.90
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH270N4F3-2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32727"
["pdf_add"]=>
string(76) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/5338/STH270N4F3-6.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(65) "//media.digikey.com/Renders/STMicro%20Renders/STRIPFET-TO2637.jpg"
["images"]=>
string(79) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/406/STRIPFET-TO2637.jpg"
["images_dir"]=>
string(30) "./images/1039/STH260N6F6-6.jpg"
["ljbh"]=>
string(14) "497-11218-2-ND"
["zzsbh"]=>
string(12) "STH270N4F3-6"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "13.098930"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 40V 180A H2PAK-6"
["xl"]=>
string(37) "Automotive, AEC-Q101, STripFET™ III"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "180A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "1.7 毫欧 @ 80A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "150nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "7400pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "300W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(40) "TO-263-7，D²Pak（6 引线 + 接片）"
["gysqjfz"]=>
string(6) "H²PAK"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "7"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H²PAK
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述：
MOSFET N-CH 40V 180A H2PAK-6
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32727 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥19.58
1000+:
￥15.00
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH270N4F3-6' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32791"
["pdf_add"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/4819/STH250N55F3-6.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(65) "//media.digikey.com/Renders/STMicro%20Renders/STRIPFET-TO2637.jpg"
["images"]=>
string(79) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/406/STRIPFET-TO2637.jpg"
["images_dir"]=>
string(30) "./images/1039/STH260N6F6-6.jpg"
["ljbh"]=>
string(14) "497-11309-2-ND"
["zzsbh"]=>
string(13) "STH250N55F3-6"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 55V 180A H2PAK-6"
["xl"]=>
string(15) "STripFET™ III"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "55V"
["dl_lxlj"]=>
string(12) "180A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "2.6 毫欧 @ 60A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "100nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "6800pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "300W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(40) "TO-263-7，D²Pak（6 引线 + 接片）"
["gysqjfz"]=>
string(6) "H²PAK"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "7"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H²PAK
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述：
MOSFET N-CH 55V 180A H2PAK-6
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32791 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：55V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH250N55F3-6' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32906"
["pdf_add"]=>
string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/06/a6/78/0d/8b/67/4b/74/DM00071594.pdf/files/DM00071594.pdf/jcr:content/translations/en.DM00071594.pdf"
["pdf_dir"]=>
string(34) "./datasheet/1039/en.DM00071594.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Photos/STMicro%20Photos/STH270N8F7-6.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/1092/STH270N8F7-6.jpg"
["images_dir"]=>
string(30) "./images/1039/STH270N8F7-6.jpg"
["ljbh"]=>
string(14) "497-13874-2-ND"
["zzsbh"]=>
string(12) "STH270N8F7-6"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "17.003780"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 80V 180A H2PAK-6"
["xl"]=>
string(28) "DeepGATE™, STripFET™ VII"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(12) "180A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "2.1 毫欧 @ 90A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "193nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "13600pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "315W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(40) "TO-263-7，D²Pak（6 引线 + 接片）"
["gysqjfz"]=>
string(6) "H²PAK"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "7"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H²PAK
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述：
MOSFET N-CH 80V 180A H2PAK-6
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32906 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：315W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥25.42
1000+:
￥19.47
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH270N8F7-6' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32909"
["pdf_add"]=>
string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/06/a6/78/0d/8b/67/4b/74/DM00071594.pdf/files/DM00071594.pdf/jcr:content/translations/en.DM00071594.pdf"
["pdf_dir"]=>
string(34) "./datasheet/1039/en.DM00071594.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Photos/STMicro%20Photos/STH270N8F7-2.JPG"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/1105/STH270N8F7-2.JPG"
["images_dir"]=>
string(30) "./images/1039/STH270N8F7-2.JPG"
["ljbh"]=>
string(14) "497-13873-2-ND"
["zzsbh"]=>
string(12) "STH270N8F7-2"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "15.286820"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 80V 180A H2PAK-2"
["xl"]=>
string(28) "DeepGATE™, STripFET™ VII"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(12) "180A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "2.1 毫欧 @ 90A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "193nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "13600pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "315W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(46) "TO-263-3，D²Pak（2 引线 + 凸片）变型"
["gysqjfz"]=>
string(6) "H²PAK"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H²PAK
外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型
描述：
MOSFET N-CH 80V 180A H2PAK-2
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32909 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：315W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥22.85
1000+:
￥17.50
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH270N8F7-2' ) LIMIT 1
|
