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array(72) { ["id"]=> string(4) "2891" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6710s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6710S2TRPBF-ND" ["zzsbh"]=> string(14) "IRF6710S2TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 25V 12A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "12A（Ta），37A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.9 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.4V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "13nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1190pF @ 13V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），15W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6710S2TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 25V 12A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2891 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：12A（Ta），37A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），15W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10392891
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6710S2TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(4) "9616" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6706s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(20) "IRF6706S2TR1PBFTR-ND" ["zzsbh"]=> string(15) "IRF6706S2TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 25V 17A DIRECTFET-S1" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "17A（Ta），63A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.8 毫欧 @ 17A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "20nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1810pF @ 13V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），26W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6706S2TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 25V 17A DIRECTFET-S1
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9616 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：17A（Ta），63A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），26W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10399616
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6706S2TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "14137" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6710s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(20) "IRF6710S2TR1PBFTR-ND" ["zzsbh"]=> string(15) "IRF6710S2TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 25V 12A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "12A（Ta），37A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.9 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.4V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "13nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1190pF @ 13V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），15W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6710S2TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 25V 12A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14137 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：12A（Ta），37A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），15W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103914137
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6710S2TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "14308" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6720s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(20) "IRF6720S2TR1PBFTR-ND" ["zzsbh"]=> string(15) "IRF6720S2TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 11A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "11A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "8 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "12nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1140pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.7W（Ta），17W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6720S2TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 30V 11A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14308 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.7W（Ta），17W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103914308
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6720S2TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19780" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6709s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(20) "IRF6709S2TR1PBFTR-ND" ["zzsbh"]=> string(15) "IRF6709S2TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 25V 12A DIRECTFET-S1" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "12A（Ta），39A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.8 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "12nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1010pF @ 13V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），21W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6709S2TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 25V 12A DIRECTFET-S1
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19780 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：12A（Ta），39A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），21W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103919780
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6709S2TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19848" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6706s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6706S2TRPBF-ND" ["zzsbh"]=> string(14) "IRF6706S2TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 25V DIRECTFET S1" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "17A（Ta），63A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.8 毫欧 @ 17A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "20nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1810pF @ 13V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），26W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6706S2TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 25V DIRECTFET S1
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19848 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：17A（Ta），63A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），26W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103919848
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6706S2TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19868" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6709s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6709S2TRPBF-ND" ["zzsbh"]=> string(14) "IRF6709S2TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 25V 12A DIRECTFET-S1" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "12A（Ta），39A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.8 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "12nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1010pF @ 13V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），21W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6709S2TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 25V 12A DIRECTFET-S1
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19868 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：12A（Ta），39A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），21W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103919868
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6709S2TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19869" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6720s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6720S2TRPBF-ND" ["zzsbh"]=> string(14) "IRF6720S2TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 30V 11A DIRECTFET-S1" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "11A（Ta），35A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "8 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "12nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1140pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.7W（Ta），17W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6720S2TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 30V 11A DIRECTFET-S1
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19869 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.7W（Ta），17W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103919869
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6720S2TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "31876" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf6810spbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6810STRPBFTR-ND" ["zzsbh"]=> string(13) "IRF6810STRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(4) "4800" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(22) "MOSFET N CH 25V 16A S1" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "16A（Ta），50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.2 毫欧 @ 16A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.1V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "11nC @ 4.5V" ["vgs_zdz"]=> string(5) "±16V" ["bt_vds_srdr"]=> string(12) "1038pF @ 13V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），20W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6810STRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N CH 25V 16A S1
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31876 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：16A（Ta），50A（Tc）
Vgs(最大值)：±16V
功率-最大值：2.1W（Ta），20W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103931876
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6810STRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "40031" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6708s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6708S2TR1PBF-ND" ["zzsbh"]=> string(15) "IRF6708S2TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 30V 13A DIRECTFET-LV" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "13A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.9 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "10nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1010pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.5W（Ta），20W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6708S2TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 30V 13A DIRECTFET-LV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 40031 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），20W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103940031
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6708S2TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "40032" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irf6708s2pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6708S2TRPBF-ND" ["zzsbh"]=> string(14) "IRF6708S2TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 30V 13A DIRECTFET-LV" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "13A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.9 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "10nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1010pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.5W（Ta），20W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6708S2TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N-CH 30V 13A DIRECTFET-LV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 40032 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），20W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103940032
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6708S2TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "40392" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf6810spbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(19) "IRF6810STR1PBFTR-ND" ["zzsbh"]=> string(14) "IRF6810STR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(22) "MOSFET N CH 25V 16A S1" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "16A（Ta），50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.2 毫欧 @ 16A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.1V @ 25µA" ["bt_vgs_sjdh"]=> string(11) "11nC @ 4.5V" ["vgs_zdz"]=> string(5) "±16V" ["bt_vds_srdr"]=> string(12) "1038pF @ 13V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），20W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 S1" ["gysqjfz"]=> string(12) "DIRECTFET S1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6810STR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET S1
外壳：DirectFET™ 等容 S1
描述： MOSFET N CH 25V 16A S1
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 40392 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：16A（Ta），50A（Tc）
Vgs(最大值)：±16V
功率-最大值：2.1W（Ta），20W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103940392
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6810STR1PBF' ) LIMIT 1

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