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array(72) { ["id"]=> string(4) "3960" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6608.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(12) "IRF6608TR-ND" ["zzsbh"]=> string(7) "IRF6608" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 13A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "13A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "9 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "24nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "2120pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6608复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 13A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3960 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta），55A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.1W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：10393960
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6608' ) LIMIT 1
array(72) { ["id"]=> string(5) "12595" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6617.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(12) "64-9144TR-ND" ["zzsbh"]=> string(7) "64-9144" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 14A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "14A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.1 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "17nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1300pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： 64-9144复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 14A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12595 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：14A（Ta），55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912595
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '64-9144' ) LIMIT 1
array(72) { ["id"]=> string(5) "12600" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6608.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(13) "IRF6608TR1-ND" ["zzsbh"]=> string(10) "IRF6608TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 13A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "13A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "9 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "24nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "2120pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6608TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 13A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12600 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta），55A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.1W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912600
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6608TR1' ) LIMIT 1
array(72) { ["id"]=> string(5) "12690" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6617.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(13) "IRF6617TR1-ND" ["zzsbh"]=> string(10) "IRF6617TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 14A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "14A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.1 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "17nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1300pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6617TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 14A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12690 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：14A（Ta），55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912690
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6617TR1' ) LIMIT 1
array(72) { ["id"]=> string(5) "12692" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6623.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(13) "IRF6623TR1-ND" ["zzsbh"]=> string(10) "IRF6623TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 16A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "16A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.7 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "17nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1360pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.4W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6623TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 20V 16A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12692 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：16A（Ta），55A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.4W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912692
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6623TR1' ) LIMIT 1
array(72) { ["id"]=> string(5) "12753" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6636.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(12) "IRF6636TR-ND" ["zzsbh"]=> string(7) "IRF6636" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 18A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "18A（Ta），81A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 18A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.45V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "27nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2420pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6636复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 20V 18A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12753 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：18A（Ta），81A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912753
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6636' ) LIMIT 1
array(72) { ["id"]=> string(5) "12765" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6626.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(15) "IRF6626TR1TR-ND" ["zzsbh"]=> string(10) "IRF6626TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 16A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "16A（Ta），72A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.4 毫欧 @ 16A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "29nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2380pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6626TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 16A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12765 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta），72A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912765
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6626TR1' ) LIMIT 1
array(72) { ["id"]=> string(5) "12767" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6636.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(15) "IRF6636TR1TR-ND" ["zzsbh"]=> string(10) "IRF6636TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 18A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "18A（Ta），81A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 18A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.45V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "27nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2420pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6636TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 20V 18A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12767 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：18A（Ta），81A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912767
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6636TR1' ) LIMIT 1
array(72) { ["id"]=> string(5) "13415" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6623pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6623TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6623TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 16A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "16A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.7 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "17nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1360pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.4W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6623TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 20V 16A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13415 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：16A（Ta），55A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.4W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913415
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6623TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "13754" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6617pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6617TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6617TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 14A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "14A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.1 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "17nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1300pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6617TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 14A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13754 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：14A（Ta），55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913754
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6617TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "13769" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6626pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6626TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6626TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 16A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "16A（Ta），72A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.4 毫欧 @ 16A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "29nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2380pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6626TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 16A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13769 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta），72A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913769
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6626TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "13772" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6626pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6626TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6626TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 16A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "16A（Ta），72A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.4 毫欧 @ 16A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "29nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2380pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6626TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 16A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13772 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta），72A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913772
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6626TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "13790" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6636pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6636TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6636TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 18A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "18A（Ta），81A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 18A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.45V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "27nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2420pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6636TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 20V 18A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13790 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：18A（Ta），81A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913790
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6636TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "14158" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf6722spbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(19) "IRF6722STR1PBFTR-ND" ["zzsbh"]=> string(14) "IRF6722STR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 13A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "13A（Ta），58A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.3 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.4V @ 50µA" ["bt_vgs_sjdh"]=> string(11) "17nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1320pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6722STR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 13A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14158 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta），58A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103914158
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6722STR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "14277" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf6722spbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(16) "IRF6722STRPBF-ND" ["zzsbh"]=> string(13) "IRF6722STRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 13A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "13A（Ta），58A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.3 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.4V @ 50µA" ["bt_vgs_sjdh"]=> string(11) "17nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1320pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6722STRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 30V 13A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14277 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta），58A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103914277
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6722STRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19857" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6614.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(10) "IRF6614-ND" ["zzsbh"]=> string(7) "IRF6614" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 40V DIRECTFET-ST" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(27) "12.7A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "8.3 毫欧 @ 12.7A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.25V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "29nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2560pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6614复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 40V DIRECTFET-ST
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19857 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：12.7A（Ta），55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103919857
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6614' ) LIMIT 1
array(72) { ["id"]=> string(5) "19858" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6614.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(13) "IRF6614TR1-ND" ["zzsbh"]=> string(10) "IRF6614TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 40V DIRECTFET-ST" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(27) "12.7A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "8.3 毫欧 @ 12.7A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.25V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "29nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2560pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6614TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 40V DIRECTFET-ST
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19858 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：12.7A（Ta），55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103919858
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6614TR1' ) LIMIT 1
array(72) { ["id"]=> string(5) "19896" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6614pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6614TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6614TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 40V 12.7A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(27) "12.7A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "8.3 毫欧 @ 12.7A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.25V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "29nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2560pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6614TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 40V 12.7A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19896 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：12.7A（Ta），55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103919896
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6614TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "22023" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6636pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6636TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6636TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(4) "9600" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 20V 18A DIRECTFET ST" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "18A（Ta），81A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 18A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.45V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "27nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2420pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6636TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 20V 18A DIRECTFET ST
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22023 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：18A（Ta），81A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922023
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6636TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "22885" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6614pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6614TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6614TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(5) "24000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 40V 12.7A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(27) "12.7A（Ta），55A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "8.3 毫欧 @ 12.7A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.25V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "29nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2560pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.1W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 ST" ["gysqjfz"]=> string(15) "DIRECTFET™ ST" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6614TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ ST
外壳：DirectFET™ 等容 ST
描述： MOSFET N-CH 40V 12.7A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22885 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：12.7A（Ta），55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922885
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6614TRPBF' ) LIMIT 1

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