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array(72) { ["id"]=> string(4) "3772" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6641pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6641TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6641TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 200V 4.6A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(26) "4.6A（Ta），26A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "59.9 毫欧 @ 5.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 150µA" ["bt_vgs_sjdh"]=> string(10) "48nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2290pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6641TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 200V 4.6A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3772 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：4.6A（Ta），26A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：10393772
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6641TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "13421" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6641pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6641TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6641TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 200V 4.6A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(26) "4.6A（Ta），26A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "59.9 毫欧 @ 5.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 150µA" ["bt_vgs_sjdh"]=> string(10) "48nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2290pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6641TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 200V 4.6A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13421 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：4.6A（Ta），26A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913421
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6641TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "13426" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6643pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6643TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6643TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 150V 6.2A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(26) "6.2A（Ta），35A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "34.5 毫欧 @ 7.6A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 150µA" ["bt_vgs_sjdh"]=> string(10) "55nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2340pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6643TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 150V 6.2A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13426 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：6.2A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913426
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6643TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "13811" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6662pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6662TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6662TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 100V 8.3A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "8.3A（Ta），47A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "22 毫欧 @ 8.2A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1360pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6662TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 100V 8.3A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13811 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：8.3A（Ta），47A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913811
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6662TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "13817" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6668pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6668TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6668TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 80V 55A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(11) "55A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "15 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1320pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6668TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 80V 55A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13817 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913817
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6668TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "14173" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf6775mpbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(19) "IRF6775MTR1PBFTR-ND" ["zzsbh"]=> string(14) "IRF6775MTR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 150V 4.9A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(26) "4.9A（Ta），28A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "56 毫欧 @ 5.6A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1411pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6775MTR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 150V 4.9A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14173 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：4.9A（Ta），28A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103914173
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6775MTR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "14176" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf6785mpbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(19) "IRF6785MTR1PBFTR-ND" ["zzsbh"]=> string(14) "IRF6785MTR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 200V 3.4A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(26) "3.4A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "100 毫欧 @ 4.2A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1500pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），57W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6785MTR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 200V 3.4A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14176 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：3.4A（Ta），19A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），57W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103914176
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6785MTR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19867" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6668.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(13) "IRF6668TR1-ND" ["zzsbh"]=> string(10) "IRF6668TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 80V 55A DIRECTFET-MZ" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(11) "55A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "15 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1320pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6668TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 80V 55A DIRECTFET-MZ
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19867 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103919867
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6668TR1' ) LIMIT 1
array(72) { ["id"]=> string(5) "20479" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6674pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6674TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6674TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 60V 13.4A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(27) "13.4A（Ta），67A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "11 毫欧 @ 13.4A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1350pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.6W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6674TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 60V 13.4A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20479 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：13.4A（Ta），67A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.6W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920479
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6674TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "22031" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6668pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6668TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6668TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(5) "14400" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 80V 55A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(11) "55A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "15 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1320pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6668TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 80V 55A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22031 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：55A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922031
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6668TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "22093" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6662pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6662TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6662TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(4) "4800" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 100V 8.3A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "8.3A（Ta），47A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "22 毫欧 @ 8.2A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1360pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6662TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 100V 8.3A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22093 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：8.3A（Ta），47A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922093
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6662TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "22979" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf6775mpbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6775MTRPBFTR-ND" ["zzsbh"]=> string(13) "IRF6775MTRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(4) "4800" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 150V 4.9A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(26) "4.9A（Ta），28A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "56 毫欧 @ 5.6A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1411pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6775MTRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 150V 4.9A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22979 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：4.9A（Ta），28A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922979
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6775MTRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "33005" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6674pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6674TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6674TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 60V 13.4A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(27) "13.4A（Ta），67A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "11 毫欧 @ 13.4A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1350pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.6W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6674TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 60V 13.4A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33005 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：13.4A（Ta），67A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.6W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103933005
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6674TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "33024" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf6785mpbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6785MTRPBFTR-ND" ["zzsbh"]=> string(13) "IRF6785MTRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 200V 3.4A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(26) "3.4A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "100 毫欧 @ 4.2A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1500pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），57W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6785MTRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 200V 3.4A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33024 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：3.4A（Ta），19A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），57W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103933024
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6785MTRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "33027" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6643pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6643TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6643TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 150V 6.2A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(26) "6.2A（Ta），35A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "34.5 毫欧 @ 7.6A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.9V @ 150µA" ["bt_vgs_sjdh"]=> string(10) "55nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2340pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MZ" ["gysqjfz"]=> string(15) "DIRECTFET™ MZ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6643TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MZ
外壳：DirectFET™ 等容 MZ
描述： MOSFET N-CH 150V 6.2A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33027 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：6.2A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103933027
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6643TRPBF' ) LIMIT 1

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