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array(74) { ["id"]=> string(5) "11357" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6601.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(12) "IRF6601TR-ND" ["zzsbh"]=> string(7) "IRF6601" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 26A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "26A（Ta），85A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.8 毫欧 @ 26A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "45nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3440pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.6W（Ta），42W（Tc）" ["gzwd"]=> string(26) "3.6W（Ta），42W（Tc）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6601复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 20V 26A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11357 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：26A（Ta），85A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.6W（Ta），42W（Tc）
工作温度：3.6W（Ta），42W（Tc）
丝印：(请登录)
料号：103911357
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6601' ) LIMIT 1
array(74) { ["id"]=> string(5) "11361" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6603.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(12) "IRF6603TR-ND" ["zzsbh"]=> string(7) "IRF6603" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 27A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "27A（Ta），92A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.4 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "72nC @ 4.5V" ["vgs_zdz"]=> string(11) "+20V，-12V" ["bt_vds_srdr"]=> string(12) "6590pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.6W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6603复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 30V 27A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11361 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：27A（Ta），92A（Tc）
Vgs(最大值)：+20V，-12V
功率-最大值：3.6W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103911361
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6603' ) LIMIT 1
array(74) { ["id"]=> string(5) "11365" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6607.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(12) "IRF6607TR-ND" ["zzsbh"]=> string(7) "IRF6607" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 27A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "27A（Ta），94A（Tc）" ["qddy"]=> string(9) "4.5V，7V" ["bt_id_vgs_rds"]=> string(22) "3.3 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "75nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "6930pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.6W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6607复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 30V 27A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11365 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：27A（Ta），94A（Tc）
Vgs(最大值)：±12V
功率-最大值：3.6W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103911365
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6607' ) LIMIT 1
array(74) { ["id"]=> string(5) "12527" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6618.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(12) "IRF6618TR-ND" ["zzsbh"]=> string(7) "IRF6618" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 30A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "30A（Ta），170A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.2 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "65nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5640pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6618复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 30V 30A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12527 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：30A（Ta），170A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912527
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6618' ) LIMIT 1
array(74) { ["id"]=> string(5) "12545" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6618.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "IRF6618TR1-ND" ["zzsbh"]=> string(10) "IRF6618TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 30A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "30A（Ta），170A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.2 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "65nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5640pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6618TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 30V 30A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12545 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：30A（Ta），170A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912545
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6618TR1' ) LIMIT 1
array(74) { ["id"]=> string(5) "12585" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6609.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(12) "IRF6609TR-ND" ["zzsbh"]=> string(7) "IRF6609" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 31A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(26) "31A（Ta），150A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "2 毫欧 @ 31A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.45V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "69nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6290pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6609复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 20V 31A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12585 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：31A（Ta），150A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912585
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6609' ) LIMIT 1
array(74) { ["id"]=> string(5) "12688" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6609.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "IRF6609TR1-ND" ["zzsbh"]=> string(10) "IRF6609TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 31A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(26) "31A（Ta），150A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "2 毫欧 @ 31A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.45V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "69nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6290pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6609TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 20V 31A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12688 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：31A（Ta），150A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912688
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6609TR1' ) LIMIT 1
array(74) { ["id"]=> string(5) "12693" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6691.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "IRF6691TR1-ND" ["zzsbh"]=> string(10) "IRF6691TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 32A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(26) "32A（Ta），180A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.8 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "71nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "6580pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6691TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 20V 32A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12693 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：32A（Ta），180A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912693
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6691TR1' ) LIMIT 1
array(74) { ["id"]=> string(5) "12710" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6691.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(12) "64-9146TR-ND" ["zzsbh"]=> string(7) "64-9146" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 32A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(26) "32A（Ta），180A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.8 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "71nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "6580pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： 64-9146复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 20V 32A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12710 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：32A（Ta），180A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912710
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '64-9146' ) LIMIT 1
array(74) { ["id"]=> string(5) "12743" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6613.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF6613TR1TR-ND" ["zzsbh"]=> string(10) "IRF6613TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 40V 23A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(26) "23A（Ta），150A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.4 毫欧 @ 23A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.25V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "63nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5950pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6613TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 40V 23A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12743 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：23A（Ta），150A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103912743
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6613TR1' ) LIMIT 1
array(74) { ["id"]=> string(5) "13730" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6609pbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "IRF6609TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6609TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 31A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(26) "31A（Ta），150A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "2 毫欧 @ 31A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.45V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "69nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6290pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6609TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 20V 31A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13730 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：31A（Ta），150A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913730
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6609TR1PBF' ) LIMIT 1
array(74) { ["id"]=> string(5) "13733" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6609pbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF6609TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6609TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 31A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(26) "31A（Ta），150A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "2 毫欧 @ 31A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.45V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "69nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6290pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "1.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6609TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 20V 31A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13733 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：31A（Ta），150A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913733
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6609TRPBF' ) LIMIT 1
array(74) { ["id"]=> string(5) "13751" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6613pbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "IRF6613TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6613TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 40V 23A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(26) "23A（Ta），150A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.4 毫欧 @ 23A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.25V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "63nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5950pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6613TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 40V 23A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13751 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：23A（Ta），150A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913751
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6613TR1PBF' ) LIMIT 1
array(74) { ["id"]=> string(5) "13757" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6618pbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "IRF6618TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6618TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 30A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "30A（Ta），170A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.2 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "65nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5640pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6618TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 30V 30A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13757 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：30A（Ta），170A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913757
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6618TR1PBF' ) LIMIT 1
array(74) { ["id"]=> string(5) "13823" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6691pbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "IRF6691TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6691TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 32A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(26) "32A（Ta），180A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.8 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "71nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "6580pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6691TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 20V 32A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13823 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：32A（Ta），180A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913823
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6691TR1PBF' ) LIMIT 1
array(74) { ["id"]=> string(5) "13826" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6691pbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF6691TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6691TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 32A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(26) "32A（Ta），180A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.8 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "71nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "6580pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6691TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 20V 32A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13826 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：32A（Ta），180A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913826
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6691TRPBF' ) LIMIT 1
array(74) { ["id"]=> string(5) "14167" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf6726mpbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "IRF6726MTR1PBFTR-ND" ["zzsbh"]=> string(14) "IRF6726MTR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(4) "6883" ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1547541165" ["ms"]=> string(29) "MOSFET N-CH 30V 32A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "32A（Ta），180A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.7 毫欧 @ 32A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.35V @ 150µA" ["bt_vgs_sjdh"]=> string(11) "77nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6140pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6726MTR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 30V 32A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14167 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：32A（Ta），180A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103914167
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6726MTR1PBF' ) LIMIT 1
array(74) { ["id"]=> string(5) "14269" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6603.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "IRF6603TR1-ND" ["zzsbh"]=> string(10) "IRF6603TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 27A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "27A（Ta），92A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.4 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "72nC @ 4.5V" ["vgs_zdz"]=> string(11) "+20V，-12V" ["bt_vds_srdr"]=> string(12) "6590pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.6W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6603TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 30V 27A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14269 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：27A（Ta），92A（Tc）
Vgs(最大值)：+20V，-12V
功率-最大值：3.6W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103914269
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6603TR1' ) LIMIT 1
array(74) { ["id"]=> string(5) "14270" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6607.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "IRF6607TR1-ND" ["zzsbh"]=> string(10) "IRF6607TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 27A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "27A（Ta），94A（Tc）" ["qddy"]=> string(9) "4.5V，7V" ["bt_id_vgs_rds"]=> string(22) "3.3 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "75nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "6930pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.6W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6607TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 30V 27A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14270 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：27A（Ta），94A（Tc）
Vgs(最大值)：±12V
功率-最大值：3.6W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103914270
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6607TR1' ) LIMIT 1
array(74) { ["id"]=> string(5) "22202" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6613pbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg" ["images"]=> string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF6613TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6613TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(4) "4800" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 40V 23A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(26) "23A（Ta），150A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.4 毫欧 @ 23A，10V" ["bt_id_vgs_zdz"]=> string(14) "2.25V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "63nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5950pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），89W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 MT" ["gysqjfz"]=> string(15) "DIRECTFET™ MT" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6613TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ MT
外壳：DirectFET™ 等容 MT
描述： MOSFET N-CH 40V 23A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22202 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：23A（Ta），150A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922202
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6613TRPBF' ) LIMIT 1

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