array(72) {
["id"]=>
string(5) "46946"
["pdf_add"]=>
string(1) "-"
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(11) "MCG20N04-TP"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "N-CHANNEL MOSFET, DFN3333"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "MCC/美微科"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(19) "Micro Commercial Co"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET(金属氧化物)"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "20A(Tc)"
["qddy"]=>
string(10) "4.5V,10V"
["bt_id_vgs_rds"]=>
string(21) "14 毫欧 @ 20A,10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "15nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "750pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "2.34W(Ta),21W(Tc)"
["gzwd"]=>
string(23) "-55°C ~ 150°C(TJ)"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(9) "DFN3333-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607651850"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装:DFN3333-8
外壳:8-PowerVDFN
描述:
N-CHANNEL MOSFET, DFN3333
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46946 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):40V
电流-连续漏极(id):20A(Tc)
Vgs(最大值):±20V
功率-最大值:2.34W(Ta),21W(Tc)
工作温度:-55°C ~ 150°C(TJ)
|
|
|
购买数量不能超过商品库存,已为您修正!
起订量:10
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包装量:
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'MCG20N04-TP' ) LIMIT 1
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