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array(72) { ["id"]=> string(5) "46066" ["pdf_add"]=> string(48) "https://www.vishay.com/docs/92238/sihd2n80ae.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(75) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;5347;P,N;2.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "SIHD2N80AE-GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 800V 2.9A DPAK" ["xl"]=> string(1) "E" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(12) "2.9A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "2.9 欧姆 @ 500mA，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "10.5nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "180pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "62.5W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(17) "D-PAK（TO-252）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607593915" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIHD2N80AE-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：D-PAK（TO-252）
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 800V 2.9A DPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46066 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：2.9A（Tc）
Vgs(最大值)：±30V
功率-最大值：62.5W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946066
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHD2N80AE-GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "47364" ["pdf_add"]=> string(50) "https://www.vishay.com/docs/62783/sqr50n04-3m8.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SQR50N04-3M8_GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CHANNEL 40V 50A DPAK" ["xl"]=> string(33) "Automotive, AEC-Q101, TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "3.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "105nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6700pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "136W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(38) "TO-252-4，DPak（3 引线 + 接片）" ["gysqjfz"]=> string(17) "D-PAK（TO-252）" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607925875" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SQR50N04-3M8_GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：D-PAK（TO-252）
外壳：TO-252-4，DPak（3 引线 + 接片）
描述： MOSFET N-CHANNEL 40V 50A DPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47364 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±20V
功率-最大值：136W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947364
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQR50N04-3M8_GE3' ) LIMIT 1
array(72) { ["id"]=> string(5) "48412" ["pdf_add"]=> string(49) "https://www.vishay.com/docs/75462/sqr70090elr.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(82) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_SQR70090ELR_GE3_tmb.JPG" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SQR70090ELR_GE3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CHANNEL 100V 86A DPAK" ["xl"]=> string(33) "Automotive, AEC-Q101, TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "86A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.7 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "65nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3500pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "136W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(38) "TO-252-4，DPak（3 引线 + 接片）" ["gysqjfz"]=> string(17) "D-PAK（TO-252）" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607930028" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SQR70090ELR_GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：D-PAK（TO-252）
外壳：TO-252-4，DPak（3 引线 + 接片）
描述： MOSFET N-CHANNEL 100V 86A DPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48412 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：86A（Tc）
Vgs(最大值)：±20V
功率-最大值：136W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103948412
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQR70090ELR_GE3' ) LIMIT 1

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