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array(72) { ["id"]=> string(5) "45478" ["pdf_add"]=> string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18543q3a" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(76) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN(3.3x3.3).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD18543Q3A" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "1.528000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(15) "60V N CH MOSFET" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "60A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "9.9 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.7V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "14.5nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1150pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(11) "66W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(5) "18543" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607591596" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD18543Q3A复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述： 60V N CH MOSFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45478 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：60A（Tc）
Vgs(最大值)：±20V
功率-最大值：66W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945478
10+: ￥2.28
1000+: ￥1.75 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD18543Q3A" ["price"]=> string(5) "1.528" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD18543Q3A' ) LIMIT 1
供应商:
array(72) { ["id"]=> string(5) "26658" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd25402q3a.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN%20(3.3x3.3).jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-PowerTDFN_(3.3x3.3).jpg" ["ljbh"]=> string(14) "296-38916-2-ND" ["zzsbh"]=> string(11) "CSD25402Q3A" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(5) "42500" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "1.586000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET P-CH 20V 76A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "76A（Tc）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(23) "8.9 毫欧 @ 10A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "1.15V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "9.7nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "1790pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），69W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(5) "25402" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD25402Q3A复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET P-CH 20V 76A 8SON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26658 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：76A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103926658
10+: ￥2.37
1000+: ￥1.82 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD25402Q3A" ["price"]=> string(5) "1.586" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD25402Q3A' ) LIMIT 1
供应商:
array(72) { ["id"]=> string(5) "27729" ["pdf_add"]=> string(47) "http://www.ti.com/lit/ds/symlink/csd16411q3.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN%20(3.3x3.3).jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-PowerTDFN_(3.3x3.3).jpg" ["ljbh"]=> string(14) "296-24255-2-ND" ["zzsbh"]=> string(10) "CSD16411Q3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(5) "12500" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "1.747000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 25V 14A/56A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "14A（Ta），56A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "10 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "3.8nC @ 4.5V" ["vgs_zdz"]=> string(11) "+16V，-12V" ["bt_vds_srdr"]=> string(13) "570pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.7W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16411" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> NULL ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD16411Q3复制
状态： 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 25V 14A/56A 8VSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27729 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：14A（Ta），56A（Tc）
Vgs(最大值)：+16V，-12V
功率-最大值：2.7W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103927729
10+: ￥2.61
1000+: ￥2.00 array(5) { ["count"]=> string(1) "2" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(10) "CSD16411Q3" ["price"]=> string(5) "1.747" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD16411Q3' ) LIMIT 1
供应商:
库存:270
array(69) { ["id"]=> string(3) "848" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd87333q3d.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["images"]=> string(102) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["ljbh"]=> string(14) "296-37535-2-ND" ["zzsbh"]=> string(11) "CSD87333Q3D" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "2.069000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET 2N-CH 30V 15A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(31) "2 N 沟道（双）非对称型" ["fetgn"]=> string(30) "逻辑电平栅极，5V 驱动" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(3) "15A" ["bt_id_vgs_rds"]=> string(21) "14.3 毫欧 @ 4A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.2V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "4.6nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "662pF @ 15V" ["gn_zdz"]=> string(2) "6W" ["gzwd"]=> string(14) "125°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "87333D" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD87333Q3D复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET 2N-CH 30V 15A 8SON
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 848 ) LIMIT 1
Fet类型：2 N 沟道（双）非对称型
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A
最大功率值：6W
工作温度：125°C（TJ）
丝印：(请登录)
料号：1041848
10+: ￥3.14
1000+: ￥2.42 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD87333Q3D" ["price"]=> string(5) "2.069" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87333Q3D' ) LIMIT 1
供应商:
array(72) { ["id"]=> string(4) "9078" ["pdf_add"]=> string(47) "http://www.ti.com/lit/ds/symlink/csd25404q3.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN%20(3.3x3.3).jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-PowerTDFN_(3.3x3.3).jpg" ["ljbh"]=> string(13) "CSD25404Q3-ND" ["zzsbh"]=> string(10) "CSD25404Q3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "2.208000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 20V 104A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "104A（Tc）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(23) "6.5 毫欧 @ 10A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "1.15V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "14.1nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "2120pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），96W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD25404" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD25404Q3复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET P-CH 20V 104A 8VSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9078 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：104A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），96W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10399078
10+: ￥3.30
1000+: ￥2.53 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(10) "CSD25404Q3" ["price"]=> string(5) "2.208" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD25404Q3' ) LIMIT 1
供应商:
array(69) { ["id"]=> string(3) "489" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd85312q3e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(61) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-SON.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-SON.jpg" ["ljbh"]=> string(14) "296-37187-2-ND" ["zzsbh"]=> string(11) "CSD85312Q3E" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "2.266000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET 2N-CH 20V 39A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共源" ["fetgn"]=> string(30) "逻辑电平栅极，5V 驱动" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(3) "39A" ["bt_id_vgs_rds"]=> string(22) "12.4 毫欧 @ 10A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.4V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "15.2nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "2390pF @ 10V" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "85312E" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD85312Q3E复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3X3.3）
外壳：8-POWERVDFN
描述： MOSFET 2N-CH 20V 39A 8VSON
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 489 ) LIMIT 1
Fet类型：2 N 沟道（双）共源
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：20V
电流-连续漏极(id)：39A
最大功率值：2.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041489
10+: ￥3.44
1000+: ￥2.65 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD85312Q3E" ["price"]=> string(5) "2.266" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD85312Q3E' ) LIMIT 1
供应商:
array(69) { ["id"]=> string(4) "1614" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd87334q3d.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["images"]=> string(102) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["ljbh"]=> string(14) "CSD87334Q3D-ND" ["zzsbh"]=> string(11) "CSD87334Q3D" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "2.449000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET 2N-CH 30V 20A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(31) "2 N 沟道（双）非对称型" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(3) "20A" ["bt_id_vgs_rds"]=> string(19) "6 毫欧 @ 12A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.2V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "8.3nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "1260pF @ 15V" ["gn_zdz"]=> string(2) "6W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "87334D" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD87334Q3D复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET 2N-CH 30V 20A 8SON
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1614 ) LIMIT 1
Fet类型：2 N 沟道（双）非对称型
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A
最大功率值：6W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10411614
10+: ￥3.72
1000+: ￥2.86 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD87334Q3D" ["price"]=> string(5) "2.449" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87334Q3D' ) LIMIT 1
供应商:
array(72) { ["id"]=> string(5) "39697" ["pdf_add"]=> string(47) "http://www.ti.com/lit/ds/symlink/csd19537q3.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg" ["images"]=> string(101) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg" ["ljbh"]=> string(14) "296-44351-2-ND" ["zzsbh"]=> string(10) "CSD19537Q3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "2.558000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 100V 50A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(19) "9.7A (Ta), 50A (Tc)" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(23) "14.5 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.6V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "21nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1680pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），83W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD19537" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD19537Q3复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 100V 50A 8VSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 39697 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：9.7A (Ta), 50A (Tc)
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），83W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103939697
10+: ￥3.82
1000+: ￥2.93 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(10) "CSD19537Q3" ["price"]=> string(5) "2.558" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD19537Q3' ) LIMIT 1
供应商:
array(72) { ["id"]=> string(5) "23516" ["pdf_add"]=> string(47) "http://www.ti.com/lit/ds/symlink/csd25404q3.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(79) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN%20(3.3x3.3).jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-PowerTDFN_(3.3x3.3).jpg" ["ljbh"]=> string(14) "296-43210-2-ND" ["zzsbh"]=> string(11) "CSD25404Q3T" ["zddgs"]=> string(3) "250" ["xysl"]=> string(4) "1250" ["cfkc"]=> string(4) "1000" ["dj"]=> string(8) "2.909000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 20V 104A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "104A（Tc）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(23) "6.5 毫欧 @ 10A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "1.15V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "14.1nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "2120pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），96W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD25404" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD25404Q3T复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET P-CH 20V 104A 8VSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23516 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：104A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），96W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103923516
10+: ￥4.35
1000+: ￥3.33 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD25404Q3T" ["price"]=> string(5) "2.909" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 250个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD25404Q3T' ) LIMIT 1
供应商:
array(69) { ["id"]=> string(3) "360" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd87312q3e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["images"]=> string(102) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["ljbh"]=> string(14) "296-35526-2-ND" ["zzsbh"]=> string(11) "CSD87312Q3E" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.143000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET 2N-CH 30V 27A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共源" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(3) "27A" ["bt_id_vgs_rds"]=> string(19) "33 毫欧 @ 7A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.3V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "8.2nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "1250pF @ 15V" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "87312E" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD87312Q3E复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET 2N-CH 30V 27A 8VSON
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 360 ) LIMIT 1
Fet类型：2 N 沟道（双）共源
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：27A
最大功率值：2.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041360
10+: ￥4.77
1000+: ￥3.67 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD87312Q3E" ["price"]=> string(5) "3.143" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87312Q3E' ) LIMIT 1
供应商:
array(69) { ["id"]=> string(4) "3776" ["pdf_add"]=> string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86336q3d" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(60) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8SON.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD86336Q3D" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.158000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "25V POWERBLOCK N CH MOSFET" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(30) "逻辑电平栅极，5V 驱动" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(11) "20A（Ta）" ["bt_id_vgs_rds"]=> string(45) "9.1 毫欧 @ 20A，5V，3.4 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(29) "1.9V @ 250µA，1.6V @ 250µA" ["bt_vgs_sjdh"]=> string(25) "3.8nC @ 45V，7.4nC @ 45V" ["bt_vds_srdr"]=> string(29) "494pF @ 12.5V，970pF @ 12.5V" ["gn_zdz"]=> string(2) "6W" ["gzwd"]=> string(15) "-55°C ~ 125°C" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "86336D" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597906637" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD86336Q3D复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerTDFN
描述： 25V POWERBLOCK N CH MOSFET
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3776 ) LIMIT 1
Fet类型：2 个 N 通道（半桥）
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：25V
电流-连续漏极(id)：20A（Ta）
最大功率值：6W
工作温度：-55°C ~ 125°C
丝印：(请登录)
料号：10413776
10+: ￥4.79
1000+: ￥3.69 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD86336Q3D" ["price"]=> string(5) "3.158" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD86336Q3D' ) LIMIT 1
供应商:
array(72) { ["id"]=> string(5) "45516" ["pdf_add"]=> string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18543q3a" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(76) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN(3.3x3.3).jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "CSD18543Q3AT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.363000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "60V N-CHANNEL NEXFET POWER MOSF" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(25) "12A（Ta），60A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "15.6 毫欧 @ 12A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "2.7V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "14.5nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1150pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(11) "66W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(5) "18543" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607591723" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD18543Q3AT复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述： 60V N-CHANNEL NEXFET POWER MOSF
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45516 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：12A（Ta），60A（Tc）
Vgs(最大值)：±20V
功率-最大值：66W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103945516
10+: ￥5.03
1000+: ￥3.85 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(12) "CSD18543Q3AT" ["price"]=> string(5) "3.363" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 250个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD18543Q3AT' ) LIMIT 1
供应商:
array(72) { ["id"]=> string(5) "33229" ["pdf_add"]=> string(47) "http://www.ti.com/lit/ds/symlink/csd19537q3.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg" ["images"]=> string(101) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg" ["ljbh"]=> string(14) "296-42632-2-ND" ["zzsbh"]=> string(11) "CSD19537Q3T" ["zddgs"]=> string(3) "250" ["xysl"]=> string(3) "750" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.377000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 100V 50A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "50A（Ta）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(23) "14.5 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.6V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "21nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1680pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），83W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD19537" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD19537Q3T复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 100V 50A 8VSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33229 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：50A（Ta）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），83W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103933229
10+: ￥5.05
1000+: ￥3.87 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD19537Q3T" ["price"]=> string(5) "3.377" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 250个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD19537Q3T' ) LIMIT 1
供应商:
array(69) { ["id"]=> string(4) "1020" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd87333q3d.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["images"]=> string(102) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["ljbh"]=> string(14) "296-37794-2-ND" ["zzsbh"]=> string(12) "CSD87333Q3DT" ["zddgs"]=> string(3) "250" ["xysl"]=> string(3) "500" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "3.450000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET 2N-CH 30V 15A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(31) "2 N 沟道（双）非对称型" ["fetgn"]=> string(30) "逻辑电平栅极，5V 驱动" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(3) "15A" ["bt_id_vgs_rds"]=> string(21) "14.3 毫欧 @ 4A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.2V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "4.6nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "662pF @ 15V" ["gn_zdz"]=> string(2) "6W" ["gzwd"]=> string(14) "125°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "87333D" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD87333Q3DT复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET 2N-CH 30V 15A 8VSON
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1020 ) LIMIT 1
Fet类型：2 N 沟道（双）非对称型
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A
最大功率值：6W
工作温度：125°C（TJ）
丝印：(请登录)
料号：10411020
10+: ￥5.24
1000+: ￥4.03 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(12) "CSD87333Q3DT" ["price"]=> string(4) "3.45" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 250个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87333Q3DT' ) LIMIT 1
供应商:
array(69) { ["id"]=> string(4) "3193" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd87503q3e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "https://www.makuwang.com/Public/Mark/img/mk.png" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "CSD87503Q3ET" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "4.211000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "30-V DUAL N-CHANNEL MOSFET, COMM" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共源" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "10A（Ta）" ["bt_id_vgs_rds"]=> string(1) "-" ["bt_id_vgs_zdz"]=> string(13) "2.1V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "17.4nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "1020pF @ 15V" ["gn_zdz"]=> string(5) "15.6W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERVDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "87503E" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398495" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD87503Q3ET复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3X3.3）
外壳：8-POWERVDFN
描述： 30-V DUAL N-CHANNEL MOSFET, COMM
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3193 ) LIMIT 1
Fet类型：2 N 沟道（双）共源
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
最大功率值：15.6W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413193
10+: ￥6.39
1000+: ￥4.92 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(12) "CSD87503Q3ET" ["price"]=> string(5) "4.211" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 250个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87503Q3ET' ) LIMIT 1
供应商:
array(69) { ["id"]=> string(4) "1130" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd87334q3d.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["images"]=> string(102) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg" ["ljbh"]=> string(14) "296-42468-2-ND" ["zzsbh"]=> string(12) "CSD87334Q3DT" ["zddgs"]=> string(3) "250" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "4.313000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET 2N-CH 30V 20A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(31) "2 N 沟道（双）非对称型" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(1) "-" ["bt_id_vgs_rds"]=> string(19) "6 毫欧 @ 12A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.2V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "8.3nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "1260pF @ 15V" ["gn_zdz"]=> string(2) "6W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "87334D" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD87334Q3DT复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述： MOSFET 2N-CH 30V 20A 8SON
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1130 ) LIMIT 1
Fet类型：2 N 沟道（双）非对称型
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：-
最大功率值：6W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10411130
10+: ￥6.55
1000+: ￥5.04 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(12) "CSD87334Q3DT" ["price"]=> string(5) "4.313" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 250个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87334Q3DT' ) LIMIT 1
供应商:
array(69) { ["id"]=> string(4) "3669" ["pdf_add"]=> string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86336q3d" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(60) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8SON.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "CSD86336Q3DT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "4.678000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "SYNCHRONOUS BUCK NEXFET POWER BL" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(30) "逻辑电平栅极，5V 驱动" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(11) "20A（Ta）" ["bt_id_vgs_rds"]=> string(45) "9.1 毫欧 @ 20A，5V，3.4 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(29) "1.9V @ 250µA，1.6V @ 250µA" ["bt_vgs_sjdh"]=> string(25) "3.8nC @ 45V，7.4nC @ 45V" ["bt_vds_srdr"]=> string(29) "494pF @ 12.5V，970pF @ 12.5V" ["gn_zdz"]=> string(2) "6W" ["gzwd"]=> string(15) "-55°C ~ 125°C" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(19) "8-VSON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "86336D" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597906335" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD86336Q3DT复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-VSON（3.3x3.3）
外壳：8-PowerTDFN
描述： SYNCHRONOUS BUCK NEXFET POWER BL
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3669 ) LIMIT 1
Fet类型：2 个 N 通道（半桥）
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：25V
电流-连续漏极(id)：20A（Ta）
最大功率值：6W
工作温度：-55°C ~ 125°C
丝印：(请登录)
料号：10413669
10+: ￥7.10
1000+: ￥5.46 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(12) "CSD86336Q3DT" ["price"]=> string(5) "4.678" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 250个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD86336Q3DT' ) LIMIT 1
供应商:

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