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array(72) { ["id"]=> string(4) "5606" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=14596&prodName=TPN1110ENH" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Renders/Toshiba%20Renders/8-PowerVDFN%20PKG.jpg" ["images"]=> string(85) "https://www.chenkeiot.com/Public/imagesmk/Renders/Toshiba_Renders/8-PowerVDFN_PKG.jpg" ["ljbh"]=> string(18) "TPN1110ENHL1QTR-ND" ["zzsbh"]=> string(14) "TPN1110ENH,L1Q" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(27) "MOSFET N-CH 200V 7.2A 8TSON" ["xl"]=> string(11) "U-MOSVIII-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(12) "7.2A（Ta）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "114 毫欧 @ 3.6A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 200µA" ["bt_vgs_sjdh"]=> string(9) "7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "600pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），39W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN1110ENH,L1Q复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 200V 7.2A 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5606 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：7.2A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），39W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：10395606
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN1110ENH,L1Q' ) LIMIT 1
array(72) { ["id"]=> string(4) "6628" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13938&prodName=TPN2R203NC" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Photos/Toshiba_Photos/8-PowerVDFN,-8-TSON.jpg" ["ljbh"]=> string(18) "TPN2R203NCL1QTR-ND" ["zzsbh"]=> string(14) "TPN2R203NC,L1Q" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(26) "MOSFET N-CH 30V 45A 8-TSON" ["xl"]=> string(9) "U-MOSVIII" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "45A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "2.2 毫欧 @ 22.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 500µA" ["bt_vgs_sjdh"]=> string(10) "34nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2230pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），42W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN2R203NC,L1Q复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 45A 8-TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6628 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），42W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：10396628
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN2R203NC,L1Q' ) LIMIT 1
array(72) { ["id"]=> string(4) "8108" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13721&prodName=TPN14006NH" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Photos/Toshiba_Photos/8-PowerVDFN,-8-TSON.jpg" ["ljbh"]=> string(18) "TPN14006NHL1QTR-ND" ["zzsbh"]=> string(14) "TPN14006NH,L1Q" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(29) "MOSFET N CH 60V 13A 8TSON-ADV" ["xl"]=> string(11) "U-MOSVIII-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "13A（Ta）" ["qddy"]=> string(10) "6.5V，10V" ["bt_id_vgs_rds"]=> string(22) "14 毫欧 @ 6.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "15nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1300pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），30W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN14006NH,L1Q复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N CH 60V 13A 8TSON-ADV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8108 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），30W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：10398108
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN14006NH,L1Q' ) LIMIT 1
array(72) { ["id"]=> string(4) "8151" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13640&prodName=TPN6R303NC" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(17) "TPN6R303NCLQTR-ND" ["zzsbh"]=> string(13) "TPN6R303NC,LQ" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(29) "MOSFET N CH 30V 20A 8TSON-ADV" ["xl"]=> string(9) "U-MOSVIII" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "20A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "6.3 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "24nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1370pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），19W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN6R303NC,LQ复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N CH 30V 20A 8TSON-ADV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8151 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），19W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：10398151
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN6R303NC,LQ' ) LIMIT 1
array(72) { ["id"]=> string(4) "8267" ["pdf_add"]=> string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=6792&prodName=TPCC8066-H" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(17) "TPCC8066-HLQ(S-ND" ["zzsbh"]=> string(15) "TPCC8066-H,LQ(S" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933785" ["ms"]=> string(29) "MOSFET N-CH 30V 11A 8TSON-ADV" ["xl"]=> string(10) "U-MOSVII-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "11A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "15 毫欧 @ 5.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "15nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1100pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），17W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPCC8066-H,LQ(S复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 11A 8TSON-ADV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8267 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），17W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：10398267
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8066-H,LQ(S' ) LIMIT 1
array(72) { ["id"]=> string(4) "8441" ["pdf_add"]=> string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=3500&prodName=TPCC8065-H" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(17) "TPCC8065-HLQ(S-ND" ["zzsbh"]=> string(15) "TPCC8065-H,LQ(S" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933785" ["ms"]=> string(29) "MOSFET N-CH 30V 13A 8TSON-ADV" ["xl"]=> string(10) "U-MOSVII-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "13A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "11.4 毫欧 @ 6.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "20nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1350pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），18W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPCC8065-H,LQ(S复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 13A 8TSON-ADV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8441 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），18W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：10398441
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8065-H,LQ(S' ) LIMIT 1
array(72) { ["id"]=> string(4) "8912" ["pdf_add"]=> string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=6789&prodName=TPCC8067-H" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(17) "TPCC8067-HLQ(S-ND" ["zzsbh"]=> string(15) "TPCC8067-H,LQ(S" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933785" ["ms"]=> string(28) "MOSFET N-CH 30V 9A 8TSON-ADV" ["xl"]=> string(10) "U-MOSVII-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "9A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "25 毫欧 @ 4.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 100µA" ["bt_vgs_sjdh"]=> string(11) "9.5nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "690pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），15W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPCC8067-H,LQ(S复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 9A 8TSON-ADV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8912 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：9A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），15W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：10398912
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8067-H,LQ(S' ) LIMIT 1
array(72) { ["id"]=> string(4) "9405" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13638&prodName=TPN2R503NC" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(18) "TPN2R503NCL1QTR-ND" ["zzsbh"]=> string(14) "TPN2R503NC,L1Q" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(29) "MOSFET N CH 30V 40A 8TSON-ADV" ["xl"]=> string(9) "U-MOSVIII" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "40A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.5 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 500µA" ["bt_vgs_sjdh"]=> string(10) "40nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2230pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），35W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN2R503NC,L1Q复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N CH 30V 40A 8TSON-ADV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9405 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：40A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），35W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：10399405
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN2R503NC,L1Q' ) LIMIT 1
array(72) { ["id"]=> string(5) "15081" ["pdf_add"]=> string(75) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/Mosfets_Prod_Guide.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(15) "TPCC8009LQ(O-ND" ["zzsbh"]=> string(13) "TPCC8009,LQ(O" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933785" ["ms"]=> string(29) "MOSFET N-CH 30V 24A 8TSON-ADV" ["xl"]=> string(7) "U-MOSIV" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "24A（Ta）" ["qddy"]=> string(11) "24A（Ta）" ["bt_id_vgs_rds"]=> string(20) "7 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "26nC @ 10V" ["vgs_zdz"]=> string(10) "26nC @ 10V" ["bt_vds_srdr"]=> string(12) "1270pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPCC8009,LQ(O复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 24A 8TSON-ADV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15081 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：24A（Ta）
Vgs(最大值)：26nC @ 10V
功率-最大值：-
工作温度：150°C（TJ）
丝印：(请登录)
料号：103915081
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8009,LQ(O' ) LIMIT 1
array(72) { ["id"]=> string(5) "15745" ["pdf_add"]=> string(67) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/TPCC8001-H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/8-VDFN.jpg" ["ljbh"]=> string(23) "TPCC8001-H(TE12LQMTR-ND" ["zzsbh"]=> string(18) "TPCC8001-H(TE12LQM" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933785" ["ms"]=> string(25) "MOSFET N-CH 30V 22A 8TSON" ["xl"]=> string(8) "U-MOSV-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "22A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.3 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2500pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），30W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPCC8001-H(TE12LQM复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 22A 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15745 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），30W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103915745
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8001-H(TE12LQM' ) LIMIT 1
array(72) { ["id"]=> string(5) "15748" ["pdf_add"]=> string(67) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/TPCC8002-H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/8-VDFN.jpg" ["ljbh"]=> string(23) "TPCC8002-H(TE12LQMTR-ND" ["zzsbh"]=> string(18) "TPCC8002-H(TE12LQM" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933785" ["ms"]=> string(25) "MOSFET N-CH 30V 22A 8TSON" ["xl"]=> string(8) "U-MOSV-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "22A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.3 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2500pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），30W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPCC8002-H(TE12LQM复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 22A 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15748 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），30W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103915748
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8002-H(TE12LQM' ) LIMIT 1
array(72) { ["id"]=> string(5) "15751" ["pdf_add"]=> string(67) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/TPCC8003-H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/8-VDFN.jpg" ["ljbh"]=> string(23) "TPCC8003-H(TE12LQMTR-ND" ["zzsbh"]=> string(18) "TPCC8003-H(TE12LQM" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933785" ["ms"]=> string(25) "MOSFET N-CH 30V 13A 8TSON" ["xl"]=> string(9) "U-MOSVI-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "13A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "16.9 毫欧 @ 6.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "17nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1300pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），22W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPCC8003-H(TE12LQM复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 13A 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15751 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），22W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103915751
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8003-H(TE12LQM' ) LIMIT 1
array(72) { ["id"]=> string(5) "15754" ["pdf_add"]=> string(67) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/TPCC8005-H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/8-VDFN.jpg" ["ljbh"]=> string(23) "TPCC8005-H(TE12LQMTR-ND" ["zzsbh"]=> string(18) "TPCC8005-H(TE12LQM" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933785" ["ms"]=> string(25) "MOSFET N-CH 30V 26A 8TSON" ["xl"]=> string(9) "U-MOSVI-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "26A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "6.4 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 500µA" ["bt_vgs_sjdh"]=> string(10) "35nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2900pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），30W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPCC8005-H(TE12LQM复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 26A 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15754 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：26A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），30W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103915754
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8005-H(TE12LQM' ) LIMIT 1
array(72) { ["id"]=> string(5) "15757" ["pdf_add"]=> string(67) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/TPCC8006-H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/8-VDFN.jpg" ["ljbh"]=> string(23) "TPCC8006-H(TE12LQMTR-ND" ["zzsbh"]=> string(18) "TPCC8006-H(TE12LQM" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933785" ["ms"]=> string(25) "MOSFET N-CH 30V 22A 8TSON" ["xl"]=> string(9) "U-MOSVI-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "22A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "8 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2200pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），27W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPCC8006-H(TE12LQM复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 22A 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15757 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），27W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103915757
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8006-H(TE12LQM' ) LIMIT 1
array(72) { ["id"]=> string(5) "23175" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=28741&prodName=TPN4R712MD" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Renders/Toshiba%20Renders/8-PowerVDFN%20PKG.jpg" ["images"]=> string(85) "https://www.chenkeiot.com/Public/imagesmk/Renders/Toshiba_Renders/8-PowerVDFN_PKG.jpg" ["ljbh"]=> string(18) "TPN4R712MDL1QTR-ND" ["zzsbh"]=> string(14) "TPN4R712MD,L1Q" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(29) "MOSFET P-CH 20V 36A 8TSON ADV" ["xl"]=> string(7) "U-MOSVI" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "36A（Tc）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "4.7 毫欧 @ 18A，4.5V" ["bt_id_vgs_zdz"]=> string(10) "1.2V @ 1mA" ["bt_vgs_sjdh"]=> string(9) "65nC @ 5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "4300pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "42W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN4R712MD,L1Q复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET P-CH 20V 36A 8TSON ADV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23175 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：36A（Tc）
Vgs(最大值)：±12V
功率-最大值：42W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103923175
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN4R712MD,L1Q' ) LIMIT 1
array(72) { ["id"]=> string(5) "23400" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13874&prodName=TPN7R506NH" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Photos/Toshiba_Photos/8-PowerVDFN.jpg" ["ljbh"]=> string(18) "TPN7R506NHL1QTR-ND" ["zzsbh"]=> string(14) "TPN7R506NH,L1Q" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(25) "MOSFET N-CH 60V 26A 8TSON" ["xl"]=> string(11) "U-MOSVIII-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "26A（Tc）" ["qddy"]=> string(10) "6.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.5 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "22nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1800pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），42W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN7R506NH,L1Q复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 60V 26A 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23400 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：26A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），42W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103923400
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN7R506NH,L1Q' ) LIMIT 1
array(72) { ["id"]=> string(5) "23436" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13537&prodName=TPN13008NH" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Photos/Toshiba_Photos/8-PowerVDFN,-8-TSON.jpg" ["ljbh"]=> string(18) "TPN13008NHL1QTR-ND" ["zzsbh"]=> string(14) "TPN13008NH,L1Q" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(25) "MOSFET N-CH 80V 40A 8TSON" ["xl"]=> string(11) "U-MOSVIII-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(11) "18A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "13.3 毫欧 @ 9A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "18nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1600pF @ 40V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），42W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN13008NH,L1Q复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 80V 40A 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23436 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：18A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），42W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103923436
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN13008NH,L1Q' ) LIMIT 1
array(72) { ["id"]=> string(5) "24071" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=14267&prodName=TPN2R703NL" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Photos/Toshiba_Photos/8-PowerVDFN,-8-TSON.jpg" ["ljbh"]=> string(18) "TPN2R703NLL1QTR-ND" ["zzsbh"]=> string(14) "TPN2R703NL,L1Q" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(26) "MOSFET N-CH 30V 45A 8-TSON" ["xl"]=> string(11) "U-MOSVIII-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "45A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "2.7 毫欧 @ 22.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 300µA" ["bt_vgs_sjdh"]=> string(10) "21nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2100pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），42W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN2R703NL,L1Q复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 45A 8-TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24071 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），42W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103924071
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN2R703NL,L1Q' ) LIMIT 1
array(72) { ["id"]=> string(5) "24855" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=14026&prodName=TPN8R903NL" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Photos/Toshiba_Photos/8-PowerVDFN,-8-TSON.jpg" ["ljbh"]=> string(17) "TPN8R903NLLQTR-ND" ["zzsbh"]=> string(13) "TPN8R903NL,LQ" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(24) "MOSFET N-CH 30V 20A TSON" ["xl"]=> string(11) "U-MOSVIII-H" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "20A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.9 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 100µA" ["bt_vgs_sjdh"]=> string(12) "9.8nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "820pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），22W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN8R903NL,LQ复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 20A TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24855 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），22W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103924855
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN8R903NL,LQ' ) LIMIT 1
array(72) { ["id"]=> string(5) "24972" ["pdf_add"]=> string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13633&prodName=TPN4R203NC" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Photos/Toshiba_Photos/8-PowerVDFN,-8-TSON.jpg" ["ljbh"]=> string(18) "TPN4R203NCL1QTR-ND" ["zzsbh"]=> string(14) "TPN4R203NC,L1Q" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933803" ["ms"]=> string(29) "MOSFET N CH 30V 23A 8TSON-ADV" ["xl"]=> string(9) "U-MOSVIII" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "23A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "4.2 毫欧 @ 11.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 200µA" ["bt_vgs_sjdh"]=> string(10) "24nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1370pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "700mW（Ta），22W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(27) "8-TSON Advance（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TPN4R203NC,L1Q复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N CH 30V 23A 8TSON-ADV
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24972 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：23A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），22W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103924972
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN4R203NC,L1Q' ) LIMIT 1

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