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array(72) { ["id"]=> string(5) "27515" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd17551q3a.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg" ["images"]=> string(101) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg" ["ljbh"]=> string(14) "296-35025-2-ND" ["zzsbh"]=> string(11) "CSD17551Q3A" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "1.389000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 12A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "9 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.1V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "7.8nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1370pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.6W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(18) "8-SON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(5) "17551" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD17551Q3A复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-SON（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 12A 8SON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27515 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.6W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103927515
10+: ￥2.08
1000+: ￥1.59 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD17551Q3A" ["price"]=> string(5) "1.389" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD17551Q3A' ) LIMIT 1
供应商:
array(72) { ["id"]=> string(5) "26599" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd17552q3a.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/8-VDFN.jpg" ["ljbh"]=> string(14) "296-34990-2-ND" ["zzsbh"]=> string(11) "CSD17552Q3A" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "2.039000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 15A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "15A（Ta），60A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "6 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.9V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "12nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2050pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.6W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(18) "8-SON（3.3x3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(5) "17552" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD17552Q3A复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-SON（3.3x3.3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 15A 8SON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26599 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta），60A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.6W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103926599
10+: ￥3.05
1000+: ￥2.33 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD17552Q3A" ["price"]=> string(5) "2.039" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD17552Q3A' ) LIMIT 1
供应商:
array(69) { ["id"]=> string(4) "3340" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd87503q3e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "https://www.makuwang.com/Public/Mark/img/mk.png" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD87503Q3E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.107000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET 2 N-CHANNEL 30V 10A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共源" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "10A（Ta）" ["bt_id_vgs_rds"]=> string(22) "13.5 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.1V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "17.4nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "1020pF @ 15V" ["gn_zdz"]=> string(5) "15.6W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERVDFN" ["gysqjfz"]=> string(18) "8-SON（3.3X3.3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "87503E" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398905" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： CSD87503Q3E复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：8-SON（3.3X3.3）
外壳：8-POWERVDFN
描述： MOSFET 2 N-CHANNEL 30V 10A 8SON
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3340 ) LIMIT 1
Fet类型：2 N 沟道（双）共源
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
最大功率值：15.6W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413340
10+: ￥4.72
1000+: ￥3.63 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD87503Q3E" ["price"]=> string(5) "3.107" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 2500个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87503Q3E' ) LIMIT 1
供应商:

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