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array(72) { ["id"]=> string(4) "2169" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/71449/71449.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(17) "SI4864DY-T1-E3-ND" ["zzsbh"]=> string(14) "SI4864DY-T1-E3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 20V 17A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "17A（Ta）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "3.5 毫欧 @ 25A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "70nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(4) "±8V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4864DY-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 20V 17A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2169 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：17A（Ta）
Vgs(最大值)：±8V
功率-最大值：1.6W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10392169
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4864DY-T1-E3' ) LIMIT 1
array(72) { ["id"]=> string(4) "2170" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/71449/71449.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4864DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4864DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 20V 17A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "17A（Ta）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "3.5 毫欧 @ 25A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "70nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(4) "±8V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4864DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 20V 17A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2170 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：17A（Ta）
Vgs(最大值)：±8V
功率-最大值：1.6W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10392170
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4864DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "2183" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/72212/si4320dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(17) "SI4320DY-T1-E3-ND" ["zzsbh"]=> string(14) "SI4320DY-T1-E3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 17A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "17A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "3 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "70nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6500pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4320DY-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 30V 17A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2183 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：17A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.6W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10392183
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4320DY-T1-E3' ) LIMIT 1
array(72) { ["id"]=> string(4) "2184" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/72212/si4320dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4320DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4320DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 17A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "17A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "3 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "70nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6500pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4320DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 30V 17A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2184 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：17A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.6W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10392184
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4320DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5052" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73786/si4632dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(19) "SI4632DY-T1-E3TR-ND" ["zzsbh"]=> string(14) "SI4632DY-T1-E3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 25V 40A 8-SOIC" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(11) "40A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.7 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.6V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "161nC @ 10V" ["vgs_zdz"]=> string(5) "±16V" ["bt_vds_srdr"]=> string(13) "11175pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.5W（Ta），7.8W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4632DY-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 25V 40A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5052 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±16V
功率-最大值：3.5W（Ta），7.8W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395052
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4632DY-T1-E3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5053" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73792/si4413ad.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(19) "SI4413ADY-T1-GE3-ND" ["zzsbh"]=> string(16) "SI4413ADY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 30V 10.5A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(13) "10.5A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.5 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "95nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4413ADY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET P-CH 30V 10.5A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5053 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395053
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4413ADY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5054" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/72085/si4423dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4423DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4423DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 20V 10A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "10A（Ta）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(23) "7.5 毫欧 @ 14A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "900mV @ 600µA" ["bt_vgs_sjdh"]=> string(10) "175nC @ 5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(4) "±8V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4423DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET P-CH 20V 10A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5054 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±8V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395054
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4423DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5055" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73786/si4632dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4632DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4632DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 25V 40A 8-SOIC" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(11) "40A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.7 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.6V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "161nC @ 10V" ["vgs_zdz"]=> string(5) "±16V" ["bt_vds_srdr"]=> string(13) "11175pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.5W（Ta），7.8W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4632DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 25V 40A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5055 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±16V
功率-最大值：3.5W（Ta），7.8W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395055
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4632DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5107" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/73852/73852.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4456DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4456DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 40V 33A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "33A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "122nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5670pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.5W（Ta），7.8W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4456DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 40V 33A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5107 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：33A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.5W（Ta），7.8W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395107
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4456DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5130" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72115/72115.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(17) "SI4451DY-T1-E3-ND" ["zzsbh"]=> string(14) "SI4451DY-T1-E3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 12V 10A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(11) "10A（Ta）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(24) "8.25 毫欧 @ 14A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "800mV @ 850µA" ["bt_vgs_sjdh"]=> string(12) "120nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(4) "±8V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4451DY-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET P-CH 12V 10A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5130 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：12V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±8V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395130
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4451DY-T1-E3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5131" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72115/72115.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4451DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4451DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 12V 10A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(11) "10A（Ta）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(24) "8.25 毫欧 @ 14A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "800mV @ 850µA" ["bt_vgs_sjdh"]=> string(12) "120nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(4) "±8V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4451DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET P-CH 12V 10A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5131 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：12V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±8V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395131
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4451DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5147" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/72150/si4390dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(17) "SI4390DY-T1-E3-ND" ["zzsbh"]=> string(14) "SI4390DY-T1-E3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 8.5A 8SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "8.5A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "9.5 毫欧 @ 12.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "15nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.4W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4390DY-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 30V 8.5A 8SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5147 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：8.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.4W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395147
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4390DY-T1-E3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5148" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/72150/si4390dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4390DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4390DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 8.5A 8SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "8.5A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "9.5 毫欧 @ 12.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "15nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.4W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4390DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 30V 8.5A 8SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5148 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：8.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.4W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395148
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4390DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5174" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/70855/70855.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4890DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4890DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 11A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(1) "-" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "12 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(26) "800mV @ 250µA（最小）" ["bt_vgs_sjdh"]=> string(9) "20nC @ 5V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(5) "±25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.5W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4890DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 30V 11A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5174 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：-
Vgs(最大值)：±25V
功率-最大值：2.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395174
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4890DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5237" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/65673/sq4470ey.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SQ4470EY-T1_GE3-ND" ["zzsbh"]=> string(15) "SQ4470EY-T1_GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 60V 16A 8SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "16A（Tc）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(20) "12 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "68nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3165pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "7.1W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SQ4470EY-T1_GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 60V 16A 8SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5237 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：16A（Tc）
Vgs(最大值)：±20V
功率-最大值：7.1W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10395237
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQ4470EY-T1_GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5367" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/71359/71359.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4838DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4838DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 12V 17A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(11) "17A（Ta）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(21) "3 毫欧 @ 25A，4.5V" ["bt_id_vgs_zdz"]=> string(26) "600mV @ 250µA（最小）" ["bt_vgs_sjdh"]=> string(11) "60nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(4) "±8V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4838DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 12V 17A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5367 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：12V
电流-连续漏极(id)：17A（Ta）
Vgs(最大值)：±8V
功率-最大值：1.6W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395367
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4838DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5380" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/71358/si4442dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4442DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4442DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 15A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "15A（Ta）" ["qddy"]=> string(10) "2.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 22A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "50nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(5) "±12V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4442DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 30V 15A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5380 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±12V
功率-最大值：1.6W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395380
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4442DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5390" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/69653/si4448dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4448DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4448DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 12V 50A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(23) "1.7 毫欧 @ 20A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "150nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(12) "12350pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.5W（Ta），7.8W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4448DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 12V 50A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5390 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：12V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±8V
功率-最大值：3.5W（Ta），7.8W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395390
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4448DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5393" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74961/si4636dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(20) "SI4636DY-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI4636DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 17A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "17A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.5 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "60nC @ 10V" ["vgs_zdz"]=> string(5) "±16V" ["bt_vds_srdr"]=> string(12) "2635pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.5W（Ta），4.4W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4636DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 30V 17A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5393 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：17A（Tc）
Vgs(最大值)：±16V
功率-最大值：2.5W（Ta），4.4W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395393
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4636DY-T1-GE3' ) LIMIT 1
array(72) { ["id"]=> string(4) "5413" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/72704/si4368dy.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(18) "SI4368DY-T1-GE3-ND" ["zzsbh"]=> string(15) "SI4368DY-T1-GE3" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 17A 8-SOIC" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "17A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.2 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "80nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "8340pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SI4368DY-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N-CH 30V 17A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5413 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：17A（Ta）
Vgs(最大值)：±12V
功率-最大值：1.6W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395413
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI4368DY-T1-GE3' ) LIMIT 1

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