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array(72) { ["id"]=> string(5) "46568" ["pdf_add"]=> string(67) "https://www.taiwansemi.com/products/datasheet/TSM085P03CV_A1605.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_8-PowerWDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "TSM085P03CV RGG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 30V 64A 8PDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "64A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.5 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "55nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3234pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "50W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(15) "8-PDFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607650067" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TSM085P03CV RGG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：8-PDFN（3x3）
外壳：8-PowerWDFN
描述： MOSFET P-CH 30V 64A 8PDFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46568 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：64A（Tc）
Vgs(最大值)：±20V
功率-最大值：50W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946568
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM085P03CV RGG' ) LIMIT 1
array(72) { ["id"]=> string(5) "46880" ["pdf_add"]=> string(69) "https://www.taiwansemi.com/products/datasheet/TSM085N03PQ33_D1608.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_8-PowerWDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "TSM085N03PQ33 RGG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 52A 8PDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "52A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.5 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "14.3nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "817pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "37W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(15) "8-PDFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607651585" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TSM085N03PQ33 RGG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：8-PDFN（3x3）
外壳：8-PowerWDFN
描述： MOSFET N-CH 30V 52A 8PDFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46880 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：52A（Tc）
Vgs(最大值)：±20V
功率-最大值：37W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946880
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM085N03PQ33 RGG' ) LIMIT 1
array(72) { ["id"]=> string(5) "46923" ["pdf_add"]=> string(69) "https://www.taiwansemi.com/products/datasheet/TSM038N03PQ33_B1610.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_8-PowerWDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "TSM038N03PQ33 RGG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 78A 8PDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "78A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.8 毫欧 @ 19A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "25nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2557pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "39W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(15) "8-PDFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607651752" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TSM038N03PQ33 RGG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：8-PDFN（3x3）
外壳：8-PowerWDFN
描述： MOSFET N-CH 30V 78A 8PDFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46923 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：78A（Tc）
Vgs(最大值)：±20V
功率-最大值：39W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946923
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM038N03PQ33 RGG' ) LIMIT 1
array(72) { ["id"]=> string(5) "46961" ["pdf_add"]=> string(69) "https://www.taiwansemi.com/products/datasheet/TSM060N03PQ33_C1608.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_8-PowerWDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "TSM060N03PQ33 RGG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 62A 8PDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "62A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "6 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "25.4nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1342pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "40W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(15) "8-PDFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607651930" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TSM060N03PQ33 RGG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：8-PDFN（3x3）
外壳：8-PowerWDFN
描述： MOSFET N-CH 30V 62A 8PDFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46961 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：62A（Tc）
Vgs(最大值)：±20V
功率-最大值：40W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946961
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM060N03PQ33 RGG' ) LIMIT 1
array(72) { ["id"]=> string(5) "46985" ["pdf_add"]=> string(69) "https://www.taiwansemi.com/products/datasheet/TSM150P03PQ33_D1710.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_8-PowerWDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "TSM150P03PQ33 RGG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 30V 36A 8PDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "36A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "15 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "29.3nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1829pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "27.8W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(15) "8-PDFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607652001" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TSM150P03PQ33 RGG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：8-PDFN（3x3）
外壳：8-PowerWDFN
描述： MOSFET P-CH 30V 36A 8PDFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46985 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：36A（Tc）
Vgs(最大值)：±20V
功率-最大值：27.8W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946985
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM150P03PQ33 RGG' ) LIMIT 1
array(72) { ["id"]=> string(5) "48308" ["pdf_add"]=> string(69) "https://www.taiwansemi.com/products/datasheet/TSM180N03PQ33_B1710.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_8-PowerWDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "TSM180N03PQ33 RGG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 25A 8PDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "25A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(21) "18 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "4.1nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "345pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "21W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(15) "8-PDFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607929235" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TSM180N03PQ33 RGG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：8-PDFN（3x3）
外壳：8-PowerWDFN
描述： MOSFET N-CH 30V 25A 8PDFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48308 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：25A（Tc）
Vgs(最大值)：±20V
功率-最大值：21W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103948308
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM180N03PQ33 RGG' ) LIMIT 1
array(72) { ["id"]=> string(5) "51051" ["pdf_add"]=> string(68) "https://www.taiwansemi.com/products/datasheet/TSM061NA03CV_B1610.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_8-PowerWDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "TSM061NA03CV RGG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 66A 8PDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "66A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "6.1 毫欧 @ 16A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "19.3nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1136pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "44.6W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(15) "8-PDFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607936249" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TSM061NA03CV RGG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：8-PDFN（3x3）
外壳：8-PowerWDFN
描述： MOSFET N-CH 30V 66A 8PDFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51051 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：66A（Tc）
Vgs(最大值)：±20V
功率-最大值：44.6W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103951051
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM061NA03CV RGG' ) LIMIT 1
array(69) { ["id"]=> string(4) "3144" ["pdf_add"]=> string(63) "http://www.taiwansemi.com/products/datasheet/TSM200N03D_A15.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(69) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_8-PowerWDFN.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Photos/Taiwan_Semi_Photos/MFG_8-PowerWDFN.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(18) "TSM200N03DPQ33 RGG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 2 N-CH 30V 20A 8PDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "20A（Tc）" ["bt_id_vgs_rds"]=> string(21) "20 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "4nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "345pF @ 25V" ["gn_zdz"]=> string(3) "20W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERWDFN" ["gysqjfz"]=> string(15) "8-PDFN（3X3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398113" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： TSM200N03DPQ33 RGG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：8-PDFN（3X3）
外壳：8-POWERWDFN
描述： MOSFET 2 N-CH 30V 20A 8PDFN
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3144 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Tc）
最大功率值：20W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413144
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM200N03DPQ33 RGG' ) LIMIT 1

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