首页 >> 所有制造商 >> ROHM/罗姆

类目:
更多
封装:
清除条件
封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(72) { ["id"]=> string(5) "21256" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3g100gntb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3G100GNTBTR-ND" ["zzsbh"]=> string(11) "RQ3G100GNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 40V 10A TSMT" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "10A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "14.3 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "8.4nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "615pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3G100GNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 40V 10A TSMT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 21256 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103921256
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3G100GNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "24981" ["pdf_add"]=> string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e130mn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(17) "RQ3E130MNTB1TR-ND" ["zzsbh"]=> string(12) "RQ3E130MNTB1" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 13A HSMT8" ["xl"]=> string(1) "*" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "13A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.1 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "14nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "840pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E130MNTB1复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 13A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24981 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103924981
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E130MNTB1' ) LIMIT 1
array(72) { ["id"]=> string(5) "24984" ["pdf_add"]=> string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e100mn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(17) "RQ3E100MNTB1TR-ND" ["zzsbh"]=> string(12) "RQ3E100MNTB1" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 10A HSMT8" ["xl"]=> string(1) "*" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "10A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "12.3 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "9.9nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "520pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E100MNTB1复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 10A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24984 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103924984
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E100MNTB1' ) LIMIT 1
array(72) { ["id"]=> string(5) "31374" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e100bntb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E100BNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E100BNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 10A HSMT8" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "10A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "10.4 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "22nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1100pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E100BNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 10A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31374 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103931374
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E100BNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "36578" ["pdf_add"]=> string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e150gn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E150GNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E150GNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 15A 8-HSMT" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "15A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "6.1 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(12) "15.3nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "850pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2W（Ta），17.2W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E150GNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 15A 8-HSMT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36578 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），17.2W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103936578
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E150GNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "36581" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e130bntb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E130BNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E130BNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 13A HSMT8" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "13A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "6 毫欧 @ 13A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1900pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E130BNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 13A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36581 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103936581
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E130BNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "36753" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e180bntb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Renders/Toshiba%20Renders/8-PowerVDFN%20PKG.jpg" ["images"]=> string(85) "https://www.chenkeiot.com/Public/imagesmk/Renders/Toshiba_Renders/8-PowerVDFN_PKG.jpg" ["ljbh"]=> string(16) "RQ3E180BNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E180BNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CHANNEL 30V 39A 8HSMT" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "39A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.9 毫欧 @ 18A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "37nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3500pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "2W（Ta），20W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E180BNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CHANNEL 30V 39A 8HSMT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36753 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：39A（Tc）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），20W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103936753
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E180BNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "36934" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e180gntb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E180GNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E180GNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 18A 8-HSMT" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "18A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.3 毫欧 @ 18A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(12) "22.4nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1520pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E180GNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 18A 8-HSMT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36934 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103936934
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E180GNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "36978" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e120attb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E120ATTBTR-ND" ["zzsbh"]=> string(11) "RQ3E120ATTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 30V 12A HSMT8" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "12A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "8 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "62nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3200pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E120ATTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET P-CH 30V 12A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36978 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103936978
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E120ATTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "37111" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e120bntb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E120BNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E120BNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 12A HSMT8" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "12A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "9.3 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "29nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1500pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E120BNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 12A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37111 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937111
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E120BNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "37170" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e150bntb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E150BNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E150BNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 15A HSMT8" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "15A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.3 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3000pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E150BNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 15A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37170 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937170
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E150BNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "37176" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e160adtb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E160ADTBTR-ND" ["zzsbh"]=> string(11) "RQ3E160ADTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 16A 8HSMT" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "16A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 16A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "51nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2550pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E160ADTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 16A 8HSMT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37176 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937176
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E160ADTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "37182" ["pdf_add"]=> string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e120gn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E120GNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E120GNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 12A 8-HSMT" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "12A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "8.8 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "10nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "590pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "2W（Ta），16W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "热销" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E120GNTB复制
状态： 热销 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 12A 8-HSMT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37182 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），16W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937182
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E120GNTB' ) LIMIT 1
供应商:
库存:15K+
array(72) { ["id"]=> string(5) "37197" ["pdf_add"]=> string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e080gn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E080GNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E080GNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 8A 8-HSMT" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "8A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "16.7 毫欧 @ 8A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "5.8nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "295pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "2W（Ta），15W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E080GNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 8A 8-HSMT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37197 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：8A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），15W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937197
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E080GNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "37260" ["pdf_add"]=> string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e070bn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E070BNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E070BNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 7A HSMT8" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "7A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "27 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "8.9nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "410pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E070BNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 7A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37260 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：7A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937260
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E070BNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "37388" ["pdf_add"]=> string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e080bn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E080BNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E080BNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 8A HSMT8" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "8A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "15.2 毫欧 @ 8A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(12) "14.5nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "660pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E080BNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 8A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37388 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：8A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937388
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E080BNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "37478" ["pdf_add"]=> string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e100gn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E100GNTBTR-ND" ["zzsbh"]=> string(11) "RQ3E100GNTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 10A 8-HSMT" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "10A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "11.7 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "7.9nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "420pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "2W（Ta），15W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E100GNTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 10A 8-HSMT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37478 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），15W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103937478
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E100GNTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "38656" ["pdf_add"]=> string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e180ajtb-e.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(16) "RQ3E180AJTBTR-ND" ["zzsbh"]=> string(11) "RQ3E180AJTB" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 18A HSMR8" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "18A（Ta），30A（Tc）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "4.5 毫欧 @ 18A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1.5V @ 11mA" ["bt_vgs_sjdh"]=> string(11) "39nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "4290pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "2W（Ta），30W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E180AJTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 18A HSMR8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 38656 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta），30A（Tc）
Vgs(最大值)：±12V
功率-最大值：2W（Ta），30W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103938656
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E180AJTB' ) LIMIT 1
array(72) { ["id"]=> string(5) "39596" ["pdf_add"]=> string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e150mn.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(17) "RQ3E150MNTB1TR-ND" ["zzsbh"]=> string(12) "RQ3E150MNTB1" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 15A HSMT8" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "15A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "6.7 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "20nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1100pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W（Ta）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3E150MNTB1复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET N-CH 30V 15A HSMT8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 39596 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103939596
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E150MNTB1' ) LIMIT 1
array(72) { ["id"]=> string(5) "45488" ["pdf_add"]=> string(40) "https://www.rohm.com/datasheet/RQ3C150BC" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "RQ3C150BCTB" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET P-CHANNEL 20V 30A 8HSMT" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ROHM/罗姆" ["zzs_new"]=> string(11) "ROHM/罗姆" ["zzs_old"]=> string(18) "Rohm Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "30A（Tc）" ["qddy"]=> string(4) "4.5V" ["bt_id_vgs_rds"]=> string(23) "6.7 毫欧 @ 15A，4.5V" ["bt_id_vgs_zdz"]=> string(10) "1.2V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "60nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(12) "4800pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "20W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(17) "8-HSMT（3.2x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607591639" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： RQ3C150BCTB复制
状态： 在售 修改
品牌： ROHM/罗姆复制
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述： MOSFET P-CHANNEL 20V 30A 8HSMT
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45488 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：30A（Tc）
Vgs(最大值)：±8V
功率-最大值：20W（Tc）
工作温度：150°C（TJ）
丝印：(请登录)
料号：103945488
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3C150BCTB' ) LIMIT 1

辰科物联

https://www.chenkeiot.com/

已成功加入购物车！
去购物车结算 继续采购
复制成功

业务介绍

芯片采购
芯片丝印
商品选型
芯片烧录
开发工具
Bom采购
SMT贴片

购物指南

注册登录
找回密码
购物流程
常见问题
支付方式
配送方式

联系我们

直线：0755-28435922
总部地址：广东省深圳市龙岗区坂田上雪村金鹏工业区新一栋5楼
联系我们
公司简介

关注我们

微信扫码
辰科物联介绍

粤公网安备 号

粤ICP备2023141824号-1

Copyright © 2002-2025 深圳市辰科物联有限公司 版权所有

销售在线 销售在线 工程师在线 工程师在线 电话咨询

销售在线

刘s:2355289363

手机: 15074164838

销售在线

陈s:2355289368

手机: 13510573285

工程师在线

吴工:2355289360

手机: 13824329149

工程师在线

陈工:2355289365

手机: 15818753382

电话咨询

0755-28435922