首页 >> 所有制造商 >> ISSI/芯成

类目:
更多
封装:
清除条件
封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(76) { ["id"]=> string(4) "3122" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400D-16320D.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(103) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;-60TWBGA-1.1-10x8;-;-60_tmb.jpg" ["images"]=> string(115) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;-60TWBGA-1.1-10x8;-;-60.jpg" ["ljbh"]=> string(20) "IS43DR86400D-3DBI-ND" ["zzsbh"]=> string(17) "IS43DR86400D-3DBI" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400D-3DBI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3122 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633122
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400D-3DBI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3137" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR81280B-16640B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(22) "IS43DR81280B-25DBLI-ND" ["zzsbh"]=> string(19) "IS43DR81280B-25DBLI" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC DRAM 1G PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(17) "1Gb（128M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "400ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "400MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "242" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(3) "1Gb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR81280B-25DBLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 1G PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3137 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：1Gb（128M x 8）
存储器接口：400ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633137
量大可议价
起订量:10 修改
包装量: 242个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR81280B-25DBLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3142" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR81280B-16640B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(0) "" ["images"]=> string(1) " " ["ljbh"]=> string(21) "IS43DR81280B-3DBLI-ND" ["zzsbh"]=> string(18) "IS43DR81280B-3DBLI" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC DRAM 1G PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(17) "1Gb（128M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(3) "1Gb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR81280B-3DBLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 1G PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3142 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：1Gb（128M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633142
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR81280B-3DBLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3178" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400C-16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(20) "IS43DR86400C-3DBI-ND" ["zzsbh"]=> string(17) "IS43DR86400C-3DBI" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400C-3DBI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3178 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633178
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400C-3DBI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3242" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400C-16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(21) "IS43DR86400C-25DBL-ND" ["zzsbh"]=> string(18) "IS43DR86400C-25DBL" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "400ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "400MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400C-25DBL复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3242 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：400ps
电压-电源：1.7V ~ 1.9V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633242
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400C-25DBL' ) LIMIT 1
array(76) { ["id"]=> string(4) "3269" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR81280B-16640B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(24) "IS43DR81280B-3DBLI-TR-ND" ["zzsbh"]=> string(21) "IS43DR81280B-3DBLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC DRAM 1G PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(17) "1Gb（128M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(3) "1Gb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR81280B-3DBLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 1G PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3269 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：1Gb（128M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633269
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR81280B-3DBLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3277" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR81280B-16640B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(25) "IS43DR81280B-25DBLI-TR-ND" ["zzsbh"]=> string(22) "IS43DR81280B-25DBLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC DRAM 1G PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(17) "1Gb（128M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "400ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "400MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(3) "1Gb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR81280B-25DBLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 1G PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3277 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：1Gb（128M x 8）
存储器接口：400ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633277
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR81280B-25DBLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3283" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400D-16320D.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(21) "IS43DR86400D-3DBLI-ND" ["zzsbh"]=> string(18) "IS43DR86400D-3DBLI" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400D-3DBLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3283 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633283
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400D-3DBLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3300" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400C-16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(23) "IS43DR86400C-3DBI-TR-ND" ["zzsbh"]=> string(20) "IS43DR86400C-3DBI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400C-3DBI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3300 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633300
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400C-3DBI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3352" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400D-16320D.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(24) "IS43DR86400D-3DBLI-TR-ND" ["zzsbh"]=> string(21) "IS43DR86400D-3DBLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400D-3DBLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3352 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633352
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400D-3DBLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3364" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400D-16320D.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(0) "" ["images"]=> string(1) " " ["ljbh"]=> string(22) "IS43DR86400D-25DBLI-ND" ["zzsbh"]=> string(19) "IS43DR86400D-25DBLI" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "400ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "400MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400D-25DBLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3364 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：400ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633364
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400D-25DBLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3382" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400C-16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(0) "" ["images"]=> string(1) " " ["ljbh"]=> string(22) "IS43DR86400C-25DBLI-ND" ["zzsbh"]=> string(19) "IS43DR86400C-25DBLI" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "400ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "400MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400C-25DBLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3382 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：400ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633382
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400C-25DBLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3680" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400C-16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(21) "IS43DR86400C-3DBLI-ND" ["zzsbh"]=> string(18) "IS43DR86400C-3DBLI" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400C-3DBLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3680 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633680
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400C-3DBLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3807" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400D-16320D.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(103) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;-60TWBGA-1.1-10x8;-;-60_tmb.jpg" ["images"]=> string(115) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;-60TWBGA-1.1-10x8;-;-60.jpg" ["ljbh"]=> string(23) "IS43DR86400D-3DBI-TR-ND" ["zzsbh"]=> string(20) "IS43DR86400D-3DBI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400D-3DBI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3807 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633807
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400D-3DBI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "4103" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR81280B-16640B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(21) "IS43DR81280B-25DBL-ND" ["zzsbh"]=> string(18) "IS43DR81280B-25DBL" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC DRAM 1G PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(17) "1Gb（128M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "400ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "400MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(3) "1Gb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR81280B-25DBL复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 1G PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 4103 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：1Gb（128M x 8）
存储器接口：400ps
电压-电源：1.7V ~ 1.9V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10634103
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR81280B-25DBL' ) LIMIT 1
array(76) { ["id"]=> string(4) "4144" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR81280B-16640B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(20) "IS43DR81280B-3DBL-ND" ["zzsbh"]=> string(17) "IS43DR81280B-3DBL" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC DRAM 1G PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(17) "1Gb（128M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(3) "1Gb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR81280B-3DBL复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 1G PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 4144 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：1Gb（128M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10634144
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR81280B-3DBL' ) LIMIT 1
array(76) { ["id"]=> string(4) "4145" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400C-16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(20) "IS43DR86400C-3DBL-ND" ["zzsbh"]=> string(17) "IS43DR86400C-3DBL" ["zddgs"]=> string(3) "242" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400C-3DBL复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 4145 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10634145
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400C-3DBL' ) LIMIT 1
array(76) { ["id"]=> string(4) "4161" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400C-16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(25) "IS43DR86400C-25DBLI-TR-ND" ["zzsbh"]=> string(22) "IS43DR86400C-25DBLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "400ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "400MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400C-25DBLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 4161 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：400ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10634161
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400C-25DBLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "4284" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400C-16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "https://www.makuwang.com/Public/Mark/img/wu_fz.jpg" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(24) "IS43DR86400C-25DBL-TR-ND" ["zzsbh"]=> string(21) "IS43DR86400C-25DBL-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "400ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "400MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400C-25DBL-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 4284 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：400ps
电压-电源：1.7V ~ 1.9V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10634284
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400C-25DBL-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "4322" ["pdf_add"]=> string(51) "http://www.issi.com/WW/pdf/43-46DR86400C-16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(0) "" ["images"]=> string(1) " " ["ljbh"]=> string(24) "IS43DR86400C-3DBLI-TR-ND" ["zzsbh"]=> string(21) "IS43DR86400C-3DBLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TWBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(12) "SDRAM - DDR2" ["ccrl"]=> string(19) "512Mb （64M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "450ps" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "333MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(11) "1.7V ~ 1.9V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(20) "60-TWBGA（8x10.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43DR86400C-3DBLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TWBGA（8x10.5）
外壳：60-TFBGA
描述： IC DRAM 512M PARALLEL 60TWBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 4322 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （64M x 8）
存储器接口：450ps
电压-电源：1.7V ~ 1.9V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10634322
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43DR86400C-3DBLI-TR' ) LIMIT 1

辰科物联

https://www.chenkeiot.com/

已成功加入购物车！
去购物车结算 继续采购
复制成功

业务介绍

芯片采购
芯片丝印
商品选型
芯片烧录
开发工具
Bom采购
SMT贴片

购物指南

注册登录
找回密码
购物流程
常见问题
支付方式
配送方式

联系我们

直线：0755-28435922
总部地址：广东省深圳市龙岗区坂田上雪村金鹏工业区新一栋5楼
联系我们
公司简介

关注我们

微信扫码
辰科物联介绍

粤公网安备 号

粤ICP备2023141824号-1

Copyright © 2002-2025 深圳市辰科物联有限公司 版权所有

销售在线 销售在线 工程师在线 工程师在线 电话咨询

销售在线

刘s:2355289363

手机: 15074164838

销售在线

陈s:2355289368

手机: 13510573285

工程师在线

吴工:2355289360

手机: 13824329149

工程师在线

陈工:2355289365

手机: 15818753382

电话咨询

0755-28435922