ISSI, Integrated Silicon Solution Inc公司介绍和产品目录_ISSI/芯成_芯成半导体专区_授权代理商

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(76) { ["id"]=> string(4) "3131" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(22) "IS43LR16320B-6BL-TR-ND" ["zzsbh"]=> string(19) "IS43LR16320B-6BL-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320B-6BL-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3131 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633131 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3139" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(19) "IS43LR16320C-6BL-ND" ["zzsbh"]=> string(16) "IS43LR16320C-6BL" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320C-6BL复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3139 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633139 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3141" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(20) "IS43LR16160G-6BLI-ND" ["zzsbh"]=> string(17) "IS43LR16160G-6BLI" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16160G-6BLI复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 256M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3141 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：256Mb （16M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633141 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3185" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(19) "IS43LR16320B-6BL-ND" ["zzsbh"]=> string(16) "IS43LR16320B-6BL" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320B-6BL复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3185 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633185 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3195" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(23) "IS43LR16320C-6BLI-TR-ND" ["zzsbh"]=> string(20) "IS43LR16320C-6BLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320C-6BLI-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3195 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633195 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3223" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(23) "IS43LR16160G-6BLI-TR-ND" ["zzsbh"]=> string(20) "IS43LR16160G-6BLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16160G-6BLI-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 256M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3223 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：256Mb （16M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633223 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3304" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(22) "IS43LR16320C-6BL-TR-ND" ["zzsbh"]=> string(19) "IS43LR16320C-6BL-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320C-6BL-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3304 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633304 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3427" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(20) "IS43LR16320C-6BLI-ND" ["zzsbh"]=> string(17) "IS43LR16320C-6BLI" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320C-6BLI复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3427 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633427 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3478" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(21) "IS46LR16320B-6BLA1-ND" ["zzsbh"]=> string(18) "IS46LR16320B-6BLA1" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320B-6BLA1复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3478 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633478 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3498" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(24) "IS46LR16320C-6BLA2-TR-ND" ["zzsbh"]=> string(21) "IS46LR16320C-6BLA2-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(23) "-40°C ~ 105°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320C-6BLA2-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3498 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 105°C（TA）	类别：存储器丝印：(请登录) 料号：10633498 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3529" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(21) "IS46LR16320C-6BLA2-ND" ["zzsbh"]=> string(18) "IS46LR16320C-6BLA2" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(23) "-40°C ~ 105°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320C-6BLA2复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3529 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 105°C（TA）	类别：存储器丝印：(请登录) 料号：10633529 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3575" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(24) "IS46LR16320B-6BLA1-TR-ND" ["zzsbh"]=> string(21) "IS46LR16320B-6BLA1-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320B-6BLA1-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3575 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633575 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3591" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(21) "IS46LR16320C-6BLA1-ND" ["zzsbh"]=> string(18) "IS46LR16320C-6BLA1" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320C-6BLA1复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3591 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633591 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3678" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(19) "IS43LR16160G-6BL-ND" ["zzsbh"]=> string(16) "IS43LR16160G-6BL" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16160G-6BL复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 256M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3678 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：256Mb （16M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633678 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3705" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(24) "IS46LR16320C-6BLA1-TR-ND" ["zzsbh"]=> string(21) "IS46LR16320C-6BLA1-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320C-6BLA1-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3705 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633705 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3849" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16800G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(23) "IS43LR16800G-6BLI-TR-ND" ["zzsbh"]=> string(20) "IS43LR16800G-6BLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16800G-6BLI-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 128M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3849 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：128Mb （8M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633849 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "4005" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16800G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(19) "IS43LR16800G-6BL-ND" ["zzsbh"]=> string(16) "IS43LR16800G-6BL" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16800G-6BL复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 128M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 4005 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：128Mb （8M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10634005 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "4087" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16800G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(22) "IS43LR16800G-6BL-TR-ND" ["zzsbh"]=> string(19) "IS43LR16800G-6BL-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16800G-6BL-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 128M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 4087 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：128Mb （8M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10634087 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "4228" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16800G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(20) "IS43LR16800G-6BLI-ND" ["zzsbh"]=> string(17) "IS43LR16800G-6BLI" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16800G-6BLI复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 128M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 4228 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：128Mb （8M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10634228 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "4367" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(22) "IS43LR16160G-6BL-TR-ND" ["zzsbh"]=> string(19) "IS43LR16160G-6BL-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16160G-6BL-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 256M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 4367 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：256Mb （16M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10634367 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 标准卷带修改个个标准卷带咨询客服	加入购物车

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(76) { ["id"]=> string(4) "3131" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(22) "IS43LR16320B-6BL-TR-ND" ["zzsbh"]=> string(19) "IS43LR16320B-6BL-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320B-6BL-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3131 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633131 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3139" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(19) "IS43LR16320C-6BL-ND" ["zzsbh"]=> string(16) "IS43LR16320C-6BL" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320C-6BL复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3139 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633139 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3141" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(20) "IS43LR16160G-6BLI-ND" ["zzsbh"]=> string(17) "IS43LR16160G-6BLI" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16160G-6BLI复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 256M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3141 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：256Mb （16M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633141 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3185" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(19) "IS43LR16320B-6BL-ND" ["zzsbh"]=> string(16) "IS43LR16320B-6BL" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320B-6BL复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3185 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633185 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3195" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(23) "IS43LR16320C-6BLI-TR-ND" ["zzsbh"]=> string(20) "IS43LR16320C-6BLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320C-6BLI-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3195 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633195 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3223" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(23) "IS43LR16160G-6BLI-TR-ND" ["zzsbh"]=> string(20) "IS43LR16160G-6BLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16160G-6BLI-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 256M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3223 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：256Mb （16M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633223 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3304" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(22) "IS43LR16320C-6BL-TR-ND" ["zzsbh"]=> string(19) "IS43LR16320C-6BL-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320C-6BL-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3304 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633304 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3427" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(20) "IS43LR16320C-6BLI-ND" ["zzsbh"]=> string(17) "IS43LR16320C-6BLI" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16320C-6BLI复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3427 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633427 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3478" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(21) "IS46LR16320B-6BLA1-ND" ["zzsbh"]=> string(18) "IS46LR16320B-6BLA1" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320B-6BLA1复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3478 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633478 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3498" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(24) "IS46LR16320C-6BLA2-TR-ND" ["zzsbh"]=> string(21) "IS46LR16320C-6BLA2-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(23) "-40°C ~ 105°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320C-6BLA2-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3498 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 105°C（TA）	类别：存储器丝印：(请登录) 料号：10633498 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3529" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(21) "IS46LR16320C-6BLA2-ND" ["zzsbh"]=> string(18) "IS46LR16320C-6BLA2" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(23) "-40°C ~ 105°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320C-6BLA2复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3529 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 105°C（TA）	类别：存储器丝印：(请登录) 料号：10633529 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3575" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(24) "IS46LR16320B-6BLA1-TR-ND" ["zzsbh"]=> string(21) "IS46LR16320B-6BLA1-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320B-6BLA1-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3575 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633575 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3591" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(21) "IS46LR16320C-6BLA1-ND" ["zzsbh"]=> string(18) "IS46LR16320C-6BLA1" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320C-6BLA1复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3591 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633591 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3678" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(19) "IS43LR16160G-6BL-ND" ["zzsbh"]=> string(16) "IS43LR16160G-6BL" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16160G-6BL复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 256M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3678 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：256Mb （16M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10633678 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3705" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16320C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(24) "IS46LR16320C-6BLA1-TR-ND" ["zzsbh"]=> string(21) "IS46LR16320C-6BLA1-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS46LR16320C-6BLA1-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 512M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3705 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：512Mb （32M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633705 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "3849" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16800G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(89) "https://www.golon.net/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["images"]=> string(93) "https://www.chenkeiot.com/Public/Downdj/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.JPG" ["ljbh"]=> string(23) "IS43LR16800G-6BLI-TR-ND" ["zzsbh"]=> string(20) "IS43LR16800G-6BLI-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16800G-6BLI-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 128M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 3849 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：128Mb （8M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10633849 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "4005" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16800G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(19) "IS43LR16800G-6BL-ND" ["zzsbh"]=> string(16) "IS43LR16800G-6BL" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16800G-6BL复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 128M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 4005 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：128Mb （8M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10634005 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "4087" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16800G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(22) "IS43LR16800G-6BL-TR-ND" ["zzsbh"]=> string(19) "IS43LR16800G-6BL-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16800G-6BL-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 128M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 4087 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：128Mb （8M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10634087 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2000个/ 标准卷带修改个个标准卷带咨询客服	加入购物车
array(76) { ["id"]=> string(4) "4228" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16800G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(20) "IS43LR16800G-6BLI-ND" ["zzsbh"]=> string(17) "IS43LR16800G-6BLI" ["zddgs"]=> string(3) "300" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "300" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16800G-6BLI复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 128M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 4228 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：128Mb （8M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：-40°C ~ 85°C（TA）	类别：存储器丝印：(请登录) 料号：10634228 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 300个/ 托盘修改个个托盘咨询客服	加入购物车
array(76) { ["id"]=> string(4) "4367" ["pdf_add"]=> string(44) "http://www.issi.com/WW/pdf/43-46LR16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/ISSI%20(Integrated%20Silicon/IS43LR16320B-6BLI_tmb.jpg" ["images"]=> string(95) "https://www.chenkeiot.com/Public/imagesmk/Photos/ISSI_(Integrated_Silicon/IS43LR16320B-6BLI.jpg" ["ljbh"]=> string(22) "IS43LR16160G-6BL-TR-ND" ["zzsbh"]=> string(19) "IS43LR16160G-6BL-TR" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(20) "SDRAM - 移动 LPDDR" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(18) "60-TFBGA（8x10）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } } 型号： IS43LR16160G-6BL-TR复制状态：在售修改品牌： ISSI/芯成复制封装：60-TFBGA（8x10）外壳：60-TFBGA 描述： IC DRAM 256M PARALLEL 60TFBGA	SELECT * FROM `golon_ccq` WHERE ( `id` = 4367 ) LIMIT 1 存储器类型：易失存储器格式：DRAM 存储容量：256Mb （16M x 16）存储器接口：5.5ns 电压-电源：1.7V ~ 1.95V 工作温度：0°C ~ 70°C（TA）	类别：存储器丝印：(请登录) 料号：10634367 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 标准卷带修改个个标准卷带咨询客服	加入购物车

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