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array(72) { ["id"]=> string(5) "46621" ["pdf_add"]=> string(65) "https://www.taiwansemi.com/products/datasheet/TSM301K12CQ_C12.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(76) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_6-VDFN-Exposed-Pad.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "TSM301K12CQ RFG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 20V 4.5A 6-TDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "4.5A（Ta）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(23) "94 毫欧 @ 2.8A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "500mV @ 250µA" ["bt_vgs_sjdh"]=> string(12) "4.5nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(10) "5.2pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "6.5W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "6-VDFN 裸露焊盘" ["gysqjfz"]=> string(15) "6-TDFN（2x2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607650268" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TSM301K12CQ RFG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：6-TDFN（2x2）
外壳：6-VDFN 裸露焊盘
描述： MOSFET P-CH 20V 4.5A 6-TDFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46621 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：4.5A（Ta）
Vgs(最大值)：±12V
功率-最大值：6.5W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103946621
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM301K12CQ RFG' ) LIMIT 1
array(69) { ["id"]=> string(4) "3098" ["pdf_add"]=> string(64) "http://www.taiwansemi.com/products/datasheet/TSM2537CQ_A1610.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(76) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_6-VDFN-Exposed-Pad.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Taiwan_Semi_Photos/MFG_6-VDFN-Exposed-Pad.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(13) "TSM2537CQ RFG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N/P-CH 20V 11.6A/9A 6TDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(32) "逻辑电平栅极，1.8V 驱动" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(26) "11.6A（Tc），9A（Tc）" ["bt_id_vgs_rds"]=> string(47) "30 毫欧 @ 6.4A，4.5V，55 毫欧 @ 5A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(27) "9.1nC @ 4.5V，9.8nC @ 4.5V" ["bt_vds_srdr"]=> string(25) "677pF @ 10V，744pF @ 10V" ["gn_zdz"]=> string(5) "6.25W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "6-VDFN 裸露焊盘" ["gysqjfz"]=> string(15) "6-TDFN（2X2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(4) "2537" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398005" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： TSM2537CQ RFG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：6-TDFN（2X2）
外壳：6-VDFN 裸露焊盘
描述： MOSFET N/P-CH 20V 11.6A/9A 6TDFN
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3098 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：逻辑电平栅极，1.8V 驱动
漏源极电压(vdss)：20V
电流-连续漏极(id)：11.6A（Tc），9A（Tc）
最大功率值：6.25W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413098
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM2537CQ RFG' ) LIMIT 1
array(69) { ["id"]=> string(4) "3099" ["pdf_add"]=> string(63) "http://www.taiwansemi.com/products/datasheet/TSM500P02D_B15.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(76) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_6-VDFN-Exposed-Pad.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Taiwan_Semi_Photos/MFG_6-VDFN-Exposed-Pad.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "TSM500P02DCQ RFG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 2 P-CH 20V 4.7A 6TDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "2 个 P 沟道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "4.7A（Tc）" ["bt_id_vgs_rds"]=> string(21) "50 毫欧 @ 3A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "800mV @ 250µA" ["bt_vgs_sjdh"]=> string(12) "9.6nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "1230pF @ 10V" ["gn_zdz"]=> string(5) "620mW" ["gzwd"]=> string(23) "-50°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "6-VDFN 裸露焊盘" ["gysqjfz"]=> string(15) "6-TDFN（2X2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(4) "50P2" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398005" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： TSM500P02DCQ RFG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：6-TDFN（2X2）
外壳：6-VDFN 裸露焊盘
描述： MOSFET 2 P-CH 20V 4.7A 6TDFN
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3099 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：标准
漏源极电压(vdss)：20V
电流-连续漏极(id)：4.7A（Tc）
最大功率值：620mW
工作温度：-50°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413099
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM500P02DCQ RFG' ) LIMIT 1
array(69) { ["id"]=> string(4) "3100" ["pdf_add"]=> string(63) "http://www.taiwansemi.com/products/datasheet/TSM250N02D_B15.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(76) "//media.digikey.com/Photos/Taiwan%20Semi%20photos/MFG_6-VDFN-Exposed-Pad.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Taiwan_Semi_Photos/MFG_6-VDFN-Exposed-Pad.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "TSM250N02DCQ RFG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 2 N-CH 20V 5.8A 6TDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "TSC/台湾半导体" ["zzs_new"]=> string(19) "TSC/台湾半导体" ["zzs_old"]=> string(32) "Taiwan Semiconductor Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "5.8A（Tc）" ["bt_id_vgs_rds"]=> string(21) "25 毫欧 @ 4A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "800mV @ 250µA" ["bt_vgs_sjdh"]=> string(12) "7.7nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "775pF @ 10V" ["gn_zdz"]=> string(5) "620mW" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "6-VDFN 裸露焊盘" ["gysqjfz"]=> string(15) "6-TDFN（2X2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(4) "25N2" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398014" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： TSM250N02DCQ RFG复制
状态： 在售 修改
品牌： TSC/台湾半导体复制
封装：6-TDFN（2X2）
外壳：6-VDFN 裸露焊盘
描述： MOSFET 2 N-CH 20V 5.8A 6TDFN
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3100 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：20V
电流-连续漏极(id)：5.8A（Tc）
最大功率值：620mW
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413100
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TSM250N02DCQ RFG' ) LIMIT 1

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