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array(76) { ["id"]=> string(4) "3118" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "https://www.golon.net/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["images"]=> string(109) "https://www.chenkeiot.com/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(21) "IS42SM16160K-75BLI-ND" ["zzsbh"]=> string(18) "IS42SM16160K-75BLI" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(3) "6ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "133MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(11) "2.7V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "348" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42SM16160K-75BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3118 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：6ns
电压-电源：2.7V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633118
量大可议价
起订量:10 修改
包装量: 348个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42SM16160K-75BLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3119" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(20) "IS42RM16160K-6BLI-ND" ["zzsbh"]=> string(17) "IS42RM16160K-6BLI" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "2.3V ~ 3V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42RM16160K-6BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3119 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：5.5ns
电压-电源：2.3V ~ 3V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633119
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42RM16160K-6BLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3149" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45S83200G-16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "https://www.golon.net/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["images"]=> string(109) "https://www.chenkeiot.com/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(20) "IS45S16160G-7BLA2-ND" ["zzsbh"]=> string(17) "IS45S16160G-7BLA2" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.4ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(23) "-40°C ~ 105°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS45S16160G-7BLA2复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3149 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：5.4ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 105°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633149
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS45S16160G-7BLA2' ) LIMIT 1
array(76) { ["id"]=> string(4) "3262" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45S83200G-16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(22) "IS42S83200G-7BLI-TR-ND" ["zzsbh"]=> string(19) "IS42S83200G-7BLI-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(19) "256Mb （32M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.4ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S83200G-7BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3262 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （32M x 8）
存储器接口：5.4ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633262
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S83200G-7BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3271" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(23) "IS42SM16160K-6BLI-TR-ND" ["zzsbh"]=> string(20) "IS42SM16160K-6BLI-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(11) "2.7V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42SM16160K-6BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3271 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：5.5ns
电压-电源：2.7V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633271
量大可议价
起订量:10 修改
包装量: 2500个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42SM16160K-6BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3276" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(24) "IS42VM16160K-75BLI-TR-ND" ["zzsbh"]=> string(21) "IS42VM16160K-75BLI-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(3) "6ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "133MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42VM16160K-75BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3276 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：6ns
电压-电源：1.7V ~ 1.95V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633276
量大可议价
起订量:10 修改
包装量: 2500个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42VM16160K-75BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3279" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(24) "IS42SM16160K-75BLI-TR-ND" ["zzsbh"]=> string(21) "IS42SM16160K-75BLI-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(3) "6ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "133MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(11) "2.7V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42SM16160K-75BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3279 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：6ns
电压-电源：2.7V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633279
量大可议价
起订量:10 修改
包装量: 2500个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42SM16160K-75BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3291" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(23) "IS42RM16160K-6BLI-TR-ND" ["zzsbh"]=> string(20) "IS42RM16160K-6BLI-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "2.3V ~ 3V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42RM16160K-6BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3291 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：5.5ns
电压-电源：2.3V ~ 3V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633291
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42RM16160K-6BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3312" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "https://www.golon.net/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["images"]=> string(109) "https://www.chenkeiot.com/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(21) "IS42RM16160K-75BLI-ND" ["zzsbh"]=> string(18) "IS42RM16160K-75BLI" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(3) "6ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "133MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "2.3V ~ 3V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "348" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42RM16160K-75BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3312 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：6ns
电压-电源：2.3V ~ 3V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633312
量大可议价
起订量:10 修改
包装量: 348个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42RM16160K-75BLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3313" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(20) "IS42VM16160K-6BLI-ND" ["zzsbh"]=> string(17) "IS42VM16160K-6BLI" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "348" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42VM16160K-6BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3313 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：5.5ns
电压-电源：1.7V ~ 1.95V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633313
量大可议价
起订量:10 修改
包装量: 348个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42VM16160K-6BLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3326" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45S83200G-16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(19) "IS42S83200G-7BLI-ND" ["zzsbh"]=> string(16) "IS42S83200G-7BLI" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(19) "256Mb （32M x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.4ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S83200G-7BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3326 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （32M x 8）
存储器接口：5.4ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633326
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S83200G-7BLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3365" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(20) "IS42SM16160K-6BLI-ND" ["zzsbh"]=> string(17) "IS42SM16160K-6BLI" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(11) "2.7V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "348" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42SM16160K-6BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3365 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：5.5ns
电压-电源：2.7V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633365
量大可议价
起订量:10 修改
包装量: 348个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42SM16160K-6BLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3368" ["pdf_add"]=> string(47) "http://www.issi.com/WW/pdf/45S81600E-16800E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(20) "IS45S16800E-6BLA1-ND" ["zzsbh"]=> string(17) "IS45S16800E-6BLA1" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.4ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS45S16800E-6BLA1复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 128M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3368 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：128Mb （8M x 16）
存储器接口：5.4ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633368
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS45S16800E-6BLA1' ) LIMIT 1
array(76) { ["id"]=> string(4) "3371" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45S83200G-16160G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "https://www.golon.net/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["images"]=> string(109) "https://www.chenkeiot.com/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(23) "IS45S16160G-7BLA2-TR-ND" ["zzsbh"]=> string(20) "IS45S16160G-7BLA2-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.4ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(23) "-40°C ~ 105°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS45S16160G-7BLA2-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3371 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：5.4ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 105°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633371
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS45S16160G-7BLA2-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3425" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16320E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "https://www.golon.net/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["images"]=> string(109) "https://www.chenkeiot.com/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(24) "IS42VM16320E-75BLI-TR-ND" ["zzsbh"]=> string(21) "IS42VM16320E-75BLI-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(3) "6ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "133MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42VM16320E-75BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 512M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3425 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （32M x 16）
存储器接口：6ns
电压-电源：1.7V ~ 1.95V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633425
量大可议价
起订量:10 修改
包装量: 2500个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42VM16320E-75BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3669" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "https://www.golon.net/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["images"]=> string(109) "https://www.chenkeiot.com/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(23) "IS42VM16160K-6BLI-TR-ND" ["zzsbh"]=> string(20) "IS42VM16160K-6BLI-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42VM16160K-6BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3669 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：5.5ns
电压-电源：1.7V ~ 1.95V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633669
量大可议价
起订量:10 修改
包装量: 2500个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42VM16160K-6BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3671" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16160K.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(24) "IS42RM16160K-75BLI-TR-ND" ["zzsbh"]=> string(21) "IS42RM16160K-75BLI-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 256M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "256Mb （16M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(3) "6ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "133MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "2.3V ~ 3V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42RM16160K-75BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 256M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3671 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：256Mb （16M x 16）
存储器接口：6ns
电压-电源：2.3V ~ 3V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633671
量大可议价
起订量:10 修改
包装量: 2500个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42RM16160K-75BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(4) "3745" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16320E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "https://www.golon.net/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["images"]=> string(109) "https://www.chenkeiot.com/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(21) "IS42VM16320E-75BLI-ND" ["zzsbh"]=> string(18) "IS42VM16320E-75BLI" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(3) "6ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "133MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "348" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42VM16320E-75BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 512M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3745 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （32M x 16）
存储器接口：6ns
电压-电源：1.7V ~ 1.95V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633745
量大可议价
起订量:10 修改
包装量: 348个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42VM16320E-75BLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3758" ["pdf_add"]=> string(50) "http://www.issi.com/WW/pdf/42-45SM-RM-VM16320E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "https://www.golon.net/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["images"]=> string(109) "https://www.chenkeiot.com/Public/Downdj/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(20) "IS42VM16320E-6BLI-ND" ["zzsbh"]=> string(17) "IS42VM16320E-6BLI" ["zddgs"]=> string(3) "348" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 512M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(14) "SDRAM - 移动" ["ccrl"]=> string(20) "512Mb （32M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(12) "1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "348" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "512Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42VM16320E-6BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 512M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3758 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：512Mb （32M x 16）
存储器接口：5.5ns
电压-电源：1.7V ~ 1.95V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633758
量大可议价
起订量:10 修改
包装量: 348个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42VM16320E-6BLI' ) LIMIT 1
array(76) { ["id"]=> string(4) "3805" ["pdf_add"]=> string(47) "http://www.issi.com/WW/pdf/45S81600E-16800E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(99) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706;54TFBGA-1.2-8x8;;54_tmb.jpg" ["images"]=> string(111) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/706;54TFBGA-1.2-8x8;;54.jpg" ["ljbh"]=> string(23) "IS45S16800E-6BLA1-TR-ND" ["zzsbh"]=> string(20) "IS45S16800E-6BLA1-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "IC DRAM 128M PARALLEL 54TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(19) "128Mb （8M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.4ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "54-TFBGA" ["gysqjfz"]=> string(17) "54-TFBGA（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "128Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "54" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS45S16800E-6BLA1-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：54-TFBGA（8x8）
外壳：54-TFBGA
描述： IC DRAM 128M PARALLEL 54TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 3805 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：128Mb （8M x 16）
存储器接口：5.4ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10633805
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS45S16800E-6BLA1-TR' ) LIMIT 1

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