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array(72) { ["id"]=> string(5) "45587" ["pdf_add"]=> string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=67742&prodName=TK210V65Z" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "https://media.digikey.com/Photos/Toshiba Photos/MFG_DFN8x8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "TK210V65Z,LQ" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933752" ["ms"]=> string(30) "DTMOS VI DFN 88 PD=130W F=1MHZ" ["xl"]=> string(7) "DTMOSVI" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "15A（Ta）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "210 毫欧 @ 7.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 610µA" ["bt_vgs_sjdh"]=> string(10) "25nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1370pF @ 300V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "130W（Tc）" ["gzwd"]=> string(6) "150°C" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "4-VSFN 裸露焊盘" ["gysqjfz"]=> string(14) "5-DFN（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607591962" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TK210V65Z,LQ复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：5-DFN（8x8）
外壳：4-VSFN 裸露焊盘
描述： DTMOS VI DFN 88 PD=130W F=1MHZ
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45587 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±30V
功率-最大值：130W（Tc）
工作温度：150°C
丝印：(请登录)
料号：103945587
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TK210V65Z,LQ' ) LIMIT 1
array(72) { ["id"]=> string(5) "45594" ["pdf_add"]=> string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=67740&prodName=TK170V65Z" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "https://media.digikey.com/Photos/Toshiba Photos/MFG_DFN8x8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "TK170V65Z,LQ" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933752" ["ms"]=> string(30) "DTMOS VI DFN 88 PD=150W F=1MHZ" ["xl"]=> string(7) "DTMOSVI" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "18A（Ta）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "170 毫欧 @ 9A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 730µA" ["bt_vgs_sjdh"]=> string(10) "29nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1635pF @ 300V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "150W（Tc）" ["gzwd"]=> string(6) "150°C" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "4-VSFN 裸露焊盘" ["gysqjfz"]=> string(14) "5-DFN（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607591973" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TK170V65Z,LQ复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：5-DFN（8x8）
外壳：4-VSFN 裸露焊盘
描述： DTMOS VI DFN 88 PD=150W F=1MHZ
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45594 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：18A（Ta）
Vgs(最大值)：±30V
功率-最大值：150W（Tc）
工作温度：150°C
丝印：(请登录)
料号：103945594
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TK170V65Z,LQ' ) LIMIT 1
array(72) { ["id"]=> string(5) "45606" ["pdf_add"]=> string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=67738&prodName=TK125V65Z" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(62) "https://media.digikey.com/Photos/Toshiba Photos/MFG_DFN8x8.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "TK125V65Z,LQ" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933725" ["ms"]=> string(30) "DTMOS VI DFN 88 PD=190W F=1MHZ" ["xl"]=> string(7) "DTMOSVI" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "24A（Ta）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "125 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 1.02mA" ["bt_vgs_sjdh"]=> string(10) "40nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2250pF @ 300V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "190W（Tc）" ["gzwd"]=> string(6) "150°C" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "4-VSFN 裸露焊盘" ["gysqjfz"]=> string(14) "5-DFN（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607592010" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TK125V65Z,LQ复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：5-DFN（8x8）
外壳：4-VSFN 裸露焊盘
描述： DTMOS VI DFN 88 PD=190W F=1MHZ
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45606 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：24A（Ta）
Vgs(最大值)：±30V
功率-最大值：190W（Tc）
工作温度：150°C
丝印：(请登录)
料号：103945606
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TK125V65Z,LQ' ) LIMIT 1
array(72) { ["id"]=> string(5) "45608" ["pdf_add"]=> string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=65090&prodName=TK099V65Z" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "TK099V65Z,LQ" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1708933725" ["ms"]=> string(32) "PB-F POWER MOSFET TRANSISTOR DFN" ["xl"]=> string(7) "DTMOSVI" ["zzs"]=> string(14) "TOSHIBA/东芝" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Toshiba Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "30A（Ta）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "99 毫欧 @ 15A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 1.27mA" ["bt_vgs_sjdh"]=> string(10) "47nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "2780pF @ 300V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "230W（Tc）" ["gzwd"]=> string(6) "150°C" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "4-VSFN 裸露焊盘" ["gysqjfz"]=> string(14) "5-DFN（8x8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607592011" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： TK099V65Z,LQ复制
状态： 在售 修改
品牌： TOSHIBA/东芝复制
封装：5-DFN（8x8）
外壳：4-VSFN 裸露焊盘
描述： PB-F POWER MOSFET TRANSISTOR DFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45608 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：30A（Ta）
Vgs(最大值)：±30V
功率-最大值：230W（Tc）
工作温度：150°C
丝印：(请登录)
料号：103945608
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TK099V65Z,LQ' ) LIMIT 1

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