Vishay公司介绍和产品目录_Vishay/威世_威世专区_授权代理商 - 辰科物联

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封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(72) { ["id"]=> string(5) "42073" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/62834/si8816edb.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/4-XFBGA.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SI8819EDB-T2-E1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1589279953" ["ms"]=> string(32) "MOSFET P-CH 12V 2.9A 4-MICROFOOT" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(12) "2.9A（Ta）" ["qddy"]=> string(11) "1.5V，3.7V" ["bt_id_vgs_rds"]=> string(23) "80 毫欧 @ 1.5A，3.7V" ["bt_id_vgs_zdz"]=> string(14) "900mV @ 250µA" ["bt_vgs_sjdh"]=> string(9) "17nC @ 8V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(10) "650pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "900mW（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(18) "4-XFBGA(0.8X0.8mm)" ["gysqjfz"]=> string(27) "4-MICRO FOOT®（0.8x0.8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(2) "AK" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(0) "" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： SI8819EDB-T2-E1复制状态：在售修改品牌： Vishay/威世复制封装：4-MICRO FOOT®（0.8x0.8）外壳：4-XFBGA(0.8X0.8mm) 描述： MOSFET P-CH 12V 2.9A 4-MICROFOOT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 42073 ) LIMIT 1 Fet类型：P 通道漏源极电压(vdss)：12V 电流-连续漏极(id)：2.9A（Ta） Vgs(最大值)：±8V 功率-最大值：900mW（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103942073 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(5) "45728" ["pdf_add"]=> string(47) "https://www.vishay.com/docs/76852/si8823edb.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(68) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/4-XFBGA.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "SI8823EDB-T2-E1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET P-CH 20V 2.7A 4-MICROFOOT" ["xl"]=> string(19) "TrenchFET® Gen III" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "2.7A（Tc）" ["qddy"]=> string(11) "1.5V，4.5V" ["bt_id_vgs_rds"]=> string(21) "95 毫欧 @ 1A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "800mV @ 250µA" ["bt_vgs_sjdh"]=> string(11) "10nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "580pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "900mW（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(18) "4-XFBGA(0.8X0.8mm)" ["gysqjfz"]=> string(27) "4-MICRO FOOT®（0.8x0.8）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607592410" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： SI8823EDB-T2-E1复制状态：在售修改品牌： Vishay/威世复制封装：4-MICRO FOOT®（0.8x0.8）外壳：4-XFBGA(0.8X0.8mm) 描述： MOSFET P-CH 20V 2.7A 4-MICROFOOT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45728 ) LIMIT 1 Fet类型：P 通道漏源极电压(vdss)：20V 电流-连续漏极(id)：2.7A（Tc） Vgs(最大值)：±8V 功率-最大值：900mW（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103945728 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车

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