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array(72) { ["id"]=> string(5) "49102" ["pdf_add"]=> string(117) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25501f3" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(87) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;-3LGA-,22-0,73x0,64;-YJN;-3.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "CSD25501F3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.300000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(15) "20V P CH MOSFET" ["xl"]=> string(11) "FemtoFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "3.6A（Ta）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(24) "76 毫欧 @ 400mA，4.5V" ["bt_id_vgs_zdz"]=> string(14) "1.05V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "1.33nC @ 4.5V" ["vgs_zdz"]=> string(4) "-20V" ["bt_vds_srdr"]=> string(11) "385pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "500mW（Ta）" ["gzwd"]=> string(10) "-55 to 150" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(7) "3-XFLGA" ["gysqjfz"]=> string(20) "3-LGA（0.73x0.64）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "V" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607932177" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD25501F3复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：3-LGA（0.73x0.64）
外壳：3-XFLGA
描述： 20V P CH MOSFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49102 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：3.6A（Ta）
Vgs(最大值)：-20V
功率-最大值：500mW（Ta）
工作温度：-55 to 150
丝印：(请登录)
料号：103949102
10+: ￥0.45
1000+: ￥0.34 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(10) "CSD25501F3" ["price"]=> string(3) "0.3" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 3000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD25501F3' ) LIMIT 1
供应商:
array(72) { ["id"]=> string(5) "45417" ["pdf_add"]=> string(117) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25501f3" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(87) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;-3LGA-,22-0,73x0,64;-YJN;-3.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD25501F3T" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "1.879000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "20-V P-CHANNEL FEMTOFET MOSFET" ["xl"]=> string(11) "FemtoFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "3.6A（Ta）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(24) "76 毫欧 @ 400mA，4.5V" ["bt_id_vgs_zdz"]=> string(14) "1.05V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "1.33nC @ 4.5V" ["vgs_zdz"]=> string(4) "-20V" ["bt_vds_srdr"]=> string(11) "385pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "500mW（Ta）" ["gzwd"]=> string(10) "-55 to 150" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(7) "3-XFLGA" ["gysqjfz"]=> string(20) "3-LGA（0.73x0.64）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "V" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607591344" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： CSD25501F3T复制
状态： 在售 修改
品牌： TI/德州仪器复制
封装：3-LGA（0.73x0.64）
外壳：3-XFLGA
描述： 20-V P-CHANNEL FEMTOFET MOSFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45417 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：3.6A（Ta）
Vgs(最大值)：-20V
功率-最大值：500mW（Ta）
工作温度：-55 to 150
丝印：(请登录)
料号：103945417
10+: ￥2.81
1000+: ￥2.15 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "249" ["zzsbh"]=> string(11) "CSD25501F3T" ["price"]=> string(5) "1.879" ["show_price"]=> string(0) "" }
起订量:10 修改
包装量: 250个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD25501F3T' ) LIMIT 1
供应商:

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