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array(78) { ["id"]=> string(3) "681" ["pdf_add"]=> string(46) "http://www.idt.com/document/71v256sa-datasheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(16) "71V256SA12YGI-ND" ["zzsbh"]=> string(13) "71V256SA12YGI" ["zddgs"]=> string(3) "405" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "12ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(2) "27" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(36) "CcqGlDm/2019-05-20/5ce2bdfa371b6.jpg" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(2) "28" ["gl_gnd"]=> string(2) "14" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71V256SA12YGI复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 681 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：12ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：1063681
量大可议价
起订量:10 修改
包装量: 27个/ 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71V256SA12YGI' ) LIMIT 1
array(78) { ["id"]=> string(3) "682" ["pdf_add"]=> string(46) "http://www.idt.com/document/71v256sa-datasheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(16) "71V256SA15YGI-ND" ["zzsbh"]=> string(13) "71V256SA15YGI" ["zddgs"]=> string(3) "405" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "15ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(2) "27" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(36) "CcqGlDm/2019-05-20/5ce2bdfa371b6.jpg" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(2) "28" ["gl_gnd"]=> string(2) "14" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71V256SA15YGI复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 682 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：15ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：1063682
量大可议价
起订量:10 修改
包装量: 27个/ 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71V256SA15YGI' ) LIMIT 1
array(78) { ["id"]=> string(3) "785" ["pdf_add"]=> string(50) "http://www.idt.com/document/dst/71256sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "800-1840-2-ND" ["zzsbh"]=> string(11) "71256L25YG8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "25ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "25ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71256L25YG8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 785 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：25ns
电压-电源：4.5V ~ 5.5V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：1063785
量大可议价
起订量:10 修改
包装量: 1000个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71256L25YG8' ) LIMIT 1
array(78) { ["id"]=> string(3) "786" ["pdf_add"]=> string(50) "http://www.idt.com/document/dst/71256sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "71256L20YG8-ND" ["zzsbh"]=> string(11) "71256L20YG8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "20ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "20ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71256L20YG8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 786 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：20ns
电压-电源：4.5V ~ 5.5V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：1063786
量大可议价
起订量:10 修改
包装量: 1000个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71256L20YG8' ) LIMIT 1
array(78) { ["id"]=> string(3) "787" ["pdf_add"]=> string(50) "http://www.idt.com/document/dst/71256sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "71256L35YG8-ND" ["zzsbh"]=> string(11) "71256L35YG8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "35ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "35ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71256L35YG8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 787 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：35ns
电压-电源：4.5V ~ 5.5V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：1063787
量大可议价
起订量:10 修改
包装量: 1000个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71256L35YG8' ) LIMIT 1
array(78) { ["id"]=> string(3) "825" ["pdf_add"]=> string(0) "" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "71V256S10YG8-ND" ["zzsbh"]=> string(12) "71V256S10YG8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "10ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "10ns" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71V256S10YG8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 825 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：10ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：1063825
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71V256S10YG8' ) LIMIT 1
array(78) { ["id"]=> string(3) "826" ["pdf_add"]=> string(0) "" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "71V256S12YG8-ND" ["zzsbh"]=> string(12) "71V256S12YG8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "12ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71V256S12YG8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 826 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：12ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：1063826
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71V256S12YG8' ) LIMIT 1
array(78) { ["id"]=> string(3) "888" ["pdf_add"]=> string(49) "http://www.idt.com/document/dst/7164sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "800-2454-5-ND" ["zzsbh"]=> string(9) "7164S20YG" ["zddgs"]=> string(3) "540" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IC SRAM 64K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(17) "64Kb （8K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "20ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "20ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(2) "27" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 7164S20YG复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 64K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 888 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：64Kb （8K x 8）
存储器接口：20ns
电压-电源：4.5V ~ 5.5V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：1063888
量大可议价
起订量:10 修改
包装量: 27个/ 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '7164S20YG' ) LIMIT 1
array(78) { ["id"]=> string(3) "891" ["pdf_add"]=> string(49) "http://www.idt.com/document/dst/7164sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(12) "7164L20YG-ND" ["zzsbh"]=> string(9) "7164L20YG" ["zddgs"]=> string(3) "270" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IC SRAM 64K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(17) "64Kb （8K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "20ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "20ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(2) "27" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 7164L20YG复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 64K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 891 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：64Kb （8K x 8）
存储器接口：20ns
电压-电源：4.5V ~ 5.5V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：1063891
量大可议价
起订量:10 修改
包装量: 27个/ 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '7164L20YG' ) LIMIT 1
array(78) { ["id"]=> string(4) "1075" ["pdf_add"]=> string(49) "http://www.idt.com/document/dst/71256sa-datasheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "800-2446-5-ND" ["zzsbh"]=> string(12) "71256SA20YGI" ["zddgs"]=> string(1) "1" ["xysl"]=> string(2) "20" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "20ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "20ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(2) "27" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(36) "CcqGlDm/2019-05-20/5ce2bdfa371b6.jpg" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(2) "28" ["gl_gnd"]=> string(2) "14" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71256SA20YGI复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 1075 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：20ns
电压-电源：4.5V ~ 5.5V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10631075
量大可议价
起订量:10 修改
包装量: 27个/ 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71256SA20YGI' ) LIMIT 1
array(78) { ["id"]=> string(4) "1079" ["pdf_add"]=> string(49) "http://www.idt.com/document/dst/7164sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "7164L20YG8-ND" ["zzsbh"]=> string(10) "7164L20YG8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IC SRAM 64K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(17) "64Kb （8K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "20ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "20ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 7164L20YG8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 64K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 1079 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：64Kb （8K x 8）
存储器接口：20ns
电压-电源：4.5V ~ 5.5V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10631079
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '7164L20YG8' ) LIMIT 1
array(78) { ["id"]=> string(4) "1127" ["pdf_add"]=> string(0) "" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "71V256S10YG-ND" ["zzsbh"]=> string(11) "71V256S10YG" ["zddgs"]=> string(3) "405" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "10ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "10ns" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71V256S10YG复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 1127 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：10ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10631127
量大可议价
起订量:10 修改
包装量: 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71V256S10YG' ) LIMIT 1
array(78) { ["id"]=> string(4) "1128" ["pdf_add"]=> string(0) "" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "71V256S12YG-ND" ["zzsbh"]=> string(11) "71V256S12YG" ["zddgs"]=> string(3) "405" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "12ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71V256S12YG复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 1128 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：12ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10631128
量大可议价
起订量:10 修改
包装量: 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71V256S12YG' ) LIMIT 1
array(78) { ["id"]=> string(4) "1709" ["pdf_add"]=> string(46) "http://www.idt.com/document/71v256sa-datasheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "71V256SA12YGI8-ND" ["zzsbh"]=> string(14) "71V256SA12YGI8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "12ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "12ns" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(36) "CcqGlDm/2019-05-20/5ce2bdfa371b6.jpg" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(2) "28" ["gl_gnd"]=> string(2) "14" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71V256SA12YGI8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 1709 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：12ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10631709
量大可议价
起订量:10 修改
包装量: 1000个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71V256SA12YGI8' ) LIMIT 1
array(78) { ["id"]=> string(4) "1710" ["pdf_add"]=> string(46) "http://www.idt.com/document/71v256sa-datasheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "71V256SA15YGI8-ND" ["zzsbh"]=> string(14) "71V256SA15YGI8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "IC SRAM 256K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(19) "256Kb （32K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "15ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "15ns" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(5) "256Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(36) "CcqGlDm/2019-05-20/5ce2bdfa371b6.jpg" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(2) "28" ["gl_gnd"]=> string(2) "14" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 71V256SA15YGI8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 256K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 1710 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：256Kb （32K x 8）
存储器接口：15ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10631710
量大可议价
起订量:10 修改
包装量: 1000个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '71V256SA15YGI8' ) LIMIT 1
array(78) { ["id"]=> string(4) "2355" ["pdf_add"]=> string(49) "http://www.idt.com/document/dst/7164sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "7164L20YGI8-ND" ["zzsbh"]=> string(11) "7164L20YGI8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(4) "2000" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IC SRAM 64K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(17) "64Kb （8K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "20ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "20ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 7164L20YGI8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 64K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 2355 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：64Kb （8K x 8）
存储器接口：20ns
电压-电源：4.5V ~ 5.5V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10632355
量大可议价
起订量:10 修改
包装量: 1000个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '7164L20YGI8' ) LIMIT 1
array(78) { ["id"]=> string(4) "2356" ["pdf_add"]=> string(49) "http://www.idt.com/document/dst/7164sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "7164S25YG8-ND" ["zzsbh"]=> string(10) "7164S25YG8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IC SRAM 64K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(17) "64Kb （8K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "25ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "25ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 7164S25YG8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 64K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 2356 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：64Kb （8K x 8）
存储器接口：25ns
电压-电源：4.5V ~ 5.5V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10632356
量大可议价
起订量:10 修改
包装量: 1000个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '7164S25YG8' ) LIMIT 1
array(78) { ["id"]=> string(4) "2385" ["pdf_add"]=> string(49) "http://www.idt.com/document/dst/7164sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(12) "7164S25YG-ND" ["zzsbh"]=> string(9) "7164S25YG" ["zddgs"]=> string(3) "540" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IC SRAM 64K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(17) "64Kb （8K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "25ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "25ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(2) "27" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 7164S25YG复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 64K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 2385 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：64Kb （8K x 8）
存储器接口：25ns
电压-电源：4.5V ~ 5.5V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10632385
量大可议价
起订量:10 修改
包装量: 27个/ 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '7164S25YG' ) LIMIT 1
array(78) { ["id"]=> string(4) "2386" ["pdf_add"]=> string(49) "http://www.idt.com/document/dst/7164sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "7164S25YGI8-ND" ["zzsbh"]=> string(11) "7164S25YGI8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IC SRAM 64K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(17) "64Kb （8K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "25ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "25ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 7164S25YGI8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 64K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 2386 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：64Kb （8K x 8）
存储器接口：25ns
电压-电源：4.5V ~ 5.5V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：10632386
量大可议价
起订量:10 修改
包装量: 1000个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '7164S25YGI8' ) LIMIT 1
array(78) { ["id"]=> string(4) "2444" ["pdf_add"]=> string(49) "http://www.idt.com/document/dst/7164sl-data-sheet" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(94) "//media.digikey.com/Photos/IDT,%20Integrated%20Device%20Technology/IDT28-BSOJ%20Series_tmb.jpg" ["images"]=> string(104) "https://www.chenkeiot.com/Public/imagesmk/Photos/IDT,_Integrated_Device_Technology/IDT28-BSOJ_Series.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "7164L25YG8-ND" ["zzsbh"]=> string(10) "7164L25YG8" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "IC SRAM 64K PARALLEL 28SOJ" ["xl"]=> string(1) "-" ["zzs"]=> string(19) "Renesas(IDT)/瑞萨" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "IDT, Integrated Device Technology Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "SRAM" ["js"]=> string(13) "SRAM - 异步" ["ccrl"]=> string(17) "64Kb （8K x 8）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(4) "25ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "并联" ["fwsj"]=> string(4) "25ns" ["dydy"]=> string(11) "4.5V ~ 5.5V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "28-BSOJ(7.62mm 宽)" ["gysqjfz"]=> string(6) "28-SOJ" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "28" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： 7164L25YG8复制
状态： 在售 修改
品牌： Renesas(IDT)/瑞萨复制
封装：28-SOJ
外壳：28-BSOJ(7.62mm 宽)
描述： IC SRAM 64K PARALLEL 28SOJ
SELECT * FROM `golon_ccq` WHERE ( `id` = 2444 ) LIMIT 1
存储器类型：易失
存储器格式：SRAM
存储容量：64Kb （8K x 8）
存储器接口：25ns
电压-电源：4.5V ~ 5.5V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：10632444
量大可议价
起订量:10 修改
包装量: 1000个/ 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '7164L25YG8' ) LIMIT 1

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