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array(76) { ["id"]=> string(5) "44284" ["pdf_add"]=> string(49) "//www.digikey.cn/wcsstore/CN/images/datasheet.gif" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(102) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/706~200TFBGA-1,1-10x14,5~B~200.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IS43LQ32256A-062BLI" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "IC DRAM 8GBIT PARALLEL 200TFBGA" ["xl"]=> string(0) "" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(21) "SDRAM - Mobile LPDDR4" ["ccrl"]=> string(18) "8Gb（256M x 32）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(6) "并联" ["szpl"]=> string(7) "1.6 GHz" ["xzqsj"]=> string(1) "-" ["fwsj"]=> string(1) "-" ["dydy"]=> string(28) "1.06V ~ 1.17V，1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 95°C（TC）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(9) "200-TFBGA" ["gysqjfz"]=> string(22) "200-TFBGA（10x14.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "136" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(1) " " ["gl_cxdaxiao"]=> string(1) " " ["gl_slfengzhuang"]=> string(1) " " ["gl_slfcb"]=> string(1) " " ["gl_slfhxp"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(3) "200" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1588734500" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43LQ32256A-062BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：200-TFBGA（10x14.5）
外壳：200-TFBGA
描述： IC DRAM 8GBIT PARALLEL 200TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 44284 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：8Gb（256M x 32）
存储器接口：并联
电压-电源：1.06V ~ 1.17V，1.7V ~ 1.95V
工作温度：-40°C ~ 95°C（TC）
类别： 存储器
丝印：(请登录)
料号：106344284
量大可议价
起订量:10 修改
包装量: 136个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43LQ32256A-062BLI' ) LIMIT 1
array(76) { ["id"]=> string(5) "53479" ["pdf_add"]=> string(48) "https://www.issi.com/WW/pdf/43-46LQ16128A-AL.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(49) "//media.digikey.com/Photos/NoPhoto/pna_zh_tmb.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(20) "IS43LQ16128A-062TBLI" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 2GBIT LVSTL 200TFBGA" ["xl"]=> string(0) "" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(21) "SDRAM - Mobile LPDDR4" ["ccrl"]=> string(18) "2Gb（128M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "LVSTL" ["szpl"]=> string(7) "1.6 GHz" ["xzqsj"]=> string(1) "-" ["fwsj"]=> string(1) "-" ["dydy"]=> string(28) "1.06V ~ 1.17V，1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 95°C（TC）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(9) "200-TFBGA" ["gysqjfz"]=> string(22) "200-TFBGA（10x14.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "136" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(1) " " ["gl_cxdaxiao"]=> string(1) " " ["gl_slfengzhuang"]=> string(1) " " ["gl_slfcb"]=> string(1) " " ["gl_slfhxp"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(3) "200" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1658462093" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43LQ16128A-062TBLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：200-TFBGA（10x14.5）
外壳：200-TFBGA
描述： IC DRAM 2GBIT LVSTL 200TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 53479 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：2Gb（128M x 16）
存储器接口：LVSTL
电压-电源：1.06V ~ 1.17V，1.7V ~ 1.95V
工作温度：-40°C ~ 95°C（TC）
类别： 存储器
丝印：(请登录)
料号：106353479
量大可议价
起订量:10 修改
包装量: 136个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43LQ16128A-062TBLI' ) LIMIT 1
array(76) { ["id"]=> string(5) "53498" ["pdf_add"]=> string(55) "https://www.issi.com/WW/pdf/43-46LQ16256-32128A-AL_.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(49) "//media.digikey.com/Photos/NoPhoto/pna_zh_tmb.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(20) "IS43LQ16256A-062TBLI" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 4GBIT LVSTL 200TFBGA" ["xl"]=> string(0) "" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(21) "SDRAM - Mobile LPDDR4" ["ccrl"]=> string(18) "4Gb（256M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "LVSTL" ["szpl"]=> string(7) "1.6 GHz" ["xzqsj"]=> string(1) "-" ["fwsj"]=> string(1) "-" ["dydy"]=> string(28) "1.06V ~ 1.17V，1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TC）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(9) "200-TFBGA" ["gysqjfz"]=> string(22) "200-TFBGA（10x14.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "136" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(1) " " ["gl_cxdaxiao"]=> string(1) " " ["gl_slfengzhuang"]=> string(1) " " ["gl_slfcb"]=> string(1) " " ["gl_slfhxp"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(3) "200" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1658462166" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43LQ16256A-062TBLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：200-TFBGA（10x14.5）
外壳：200-TFBGA
描述： IC DRAM 4GBIT LVSTL 200TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 53498 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：4Gb（256M x 16）
存储器接口：LVSTL
电压-电源：1.06V ~ 1.17V，1.7V ~ 1.95V
工作温度：-40°C ~ 85°C（TC）
类别： 存储器
丝印：(请登录)
料号：106353498
量大可议价
起订量:10 修改
包装量: 136个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43LQ16256A-062TBLI' ) LIMIT 1
array(76) { ["id"]=> string(5) "53499" ["pdf_add"]=> string(55) "https://www.issi.com/WW/pdf/43-46LQ16256-32128A-AL_.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(49) "//media.digikey.com/Photos/NoPhoto/pna_zh_tmb.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(20) "IS43LQ32128A-062TBLI" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 4GBIT LVSTL 200TFBGA" ["xl"]=> string(0) "" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(21) "SDRAM - Mobile LPDDR4" ["ccrl"]=> string(18) "4Gb（128M x 32）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "LVSTL" ["szpl"]=> string(7) "1.6 GHz" ["xzqsj"]=> string(1) "-" ["fwsj"]=> string(1) "-" ["dydy"]=> string(28) "1.06V ~ 1.17V，1.7V ~ 1.95V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TC）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(9) "200-TFBGA" ["gysqjfz"]=> string(22) "200-TFBGA（10x14.5）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(3) "136" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(1) " " ["gl_cxdaxiao"]=> string(1) " " ["gl_slfengzhuang"]=> string(1) " " ["gl_slfcb"]=> string(1) " " ["gl_slfhxp"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(3) "200" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1658462166" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS43LQ32128A-062TBLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：200-TFBGA（10x14.5）
外壳：200-TFBGA
描述： IC DRAM 4GBIT LVSTL 200TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 53499 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：4Gb（128M x 32）
存储器接口：LVSTL
电压-电源：1.06V ~ 1.17V，1.7V ~ 1.95V
工作温度：-40°C ~ 85°C（TC）
类别： 存储器
丝印：(请登录)
料号：106353499
量大可议价
起订量:10 修改
包装量: 136个/ 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS43LQ32128A-062TBLI' ) LIMIT 1

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