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array(72) { ["id"]=> string(4) "3197" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/CD00001833.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10.jpg" ["ljbh"]=> string(13) "497-3251-2-ND" ["zzsbh"]=> string(13) "STV160NF02LT4" ["zddgs"]=> string(3) "600" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 20V 160A POWERSO-10" ["xl"]=> string(14) "STripFET™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "160A（Tc）" ["qddy"]=> string(8) "5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.5 毫欧 @ 80A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "160nC @ 10V" ["vgs_zdz"]=> string(5) "±15V" ["bt_vds_srdr"]=> string(12) "4800pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "210W（Tc）" ["gzwd"]=> string(14) "175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(29) "PowerSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-PowerSO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STV160NF02LT4复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-PowerSO
外壳：PowerSO-10 裸露底部焊盘
描述： MOSFET N-CH 20V 160A POWERSO-10
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3197 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：160A（Tc）
Vgs(最大值)：±15V
功率-最大值：210W（Tc）
工作温度：175°C（TJ）
丝印：(请登录)
料号：10393197
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STV160NF02LT4' ) LIMIT 1
array(72) { ["id"]=> string(4) "3421" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/CD00002192.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10.jpg" ["ljbh"]=> string(17) "STV160NF02LAT4-ND" ["zzsbh"]=> string(14) "STV160NF02LAT4" ["zddgs"]=> string(3) "600" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 20V 160A POWERSO-10" ["xl"]=> string(11) "STripFET™" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "160A（Tc）" ["qddy"]=> string(8) "5V，10V" ["bt_id_vgs_rds"]=> string(21) "2.7毫欧 @ 80A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "175nC @ 10V" ["vgs_zdz"]=> string(5) "±15V" ["bt_vds_srdr"]=> string(12) "5500pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "210W（Tc）" ["gzwd"]=> string(14) "175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(29) "PowerSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-PowerSO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STV160NF02LAT4复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-PowerSO
外壳：PowerSO-10 裸露底部焊盘
描述： MOSFET N-CH 20V 160A POWERSO-10
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3421 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：160A（Tc）
Vgs(最大值)：±15V
功率-最大值：210W（Tc）
工作温度：175°C（TJ）
丝印：(请登录)
料号：10393421
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STV160NF02LAT4' ) LIMIT 1
array(72) { ["id"]=> string(4) "3422" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/CD00002193.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10.jpg" ["ljbh"]=> string(17) "STV160NF03LAT4-ND" ["zzsbh"]=> string(14) "STV160NF03LAT4" ["zddgs"]=> string(3) "600" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 30V 160A POWERSO-10" ["xl"]=> string(11) "STripFET™" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "160A（Tc）" ["qddy"]=> string(8) "5V，10V" ["bt_id_vgs_rds"]=> string(20) "3 毫欧 @ 80A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "160nC @ 10V" ["vgs_zdz"]=> string(5) "±15V" ["bt_vds_srdr"]=> string(12) "5350pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "210W（Tc）" ["gzwd"]=> string(14) "175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(29) "PowerSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-PowerSO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STV160NF03LAT4复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-PowerSO
外壳：PowerSO-10 裸露底部焊盘
描述： MOSFET N-CH 30V 160A POWERSO-10
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3422 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：160A（Tc）
Vgs(最大值)：±15V
功率-最大值：210W（Tc）
工作温度：175°C（TJ）
丝印：(请登录)
料号：10393422
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STV160NF03LAT4' ) LIMIT 1
array(72) { ["id"]=> string(4) "3469" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/CD00174869.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10.jpg" ["ljbh"]=> string(13) "497-7030-2-ND" ["zzsbh"]=> string(11) "STV250N55F3" ["zddgs"]=> string(3) "600" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 55V 250A POWERSO-10" ["xl"]=> string(15) "STripFET™ III" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "55V" ["dl_lxlj"]=> string(12) "200A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.2 毫欧 @ 75A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "100nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(29) "PowerSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-PowerSO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STV250N55F3复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-PowerSO
外壳：PowerSO-10 裸露底部焊盘
描述： MOSFET N-CH 55V 250A POWERSO-10
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3469 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：55V
电流-连续漏极(id)：200A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10393469
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STV250N55F3' ) LIMIT 1
array(72) { ["id"]=> string(5) "32745" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/CD00174871.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10.jpg" ["ljbh"]=> string(13) "497-7031-2-ND" ["zzsbh"]=> string(10) "STV270N4F3" ["zddgs"]=> string(3) "600" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 40V 270A POWERSO-10" ["xl"]=> string(15) "STripFET™ III" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "270A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "1.5 毫欧 @ 80A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "150nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7500pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(29) "PowerSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-PowerSO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STV270N4F3复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-PowerSO
外壳：PowerSO-10 裸露底部焊盘
描述： MOSFET N-CH 40V 270A POWERSO-10
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32745 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：270A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103932745
量大可议价
起订量:10 修改
包装量: 修改
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咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STV270N4F3' ) LIMIT 1
array(72) { ["id"]=> string(5) "32755" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/CD00190656.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10.jpg" ["ljbh"]=> string(13) "497-7029-2-ND" ["zzsbh"]=> string(11) "STV240N75F3" ["zddgs"]=> string(3) "600" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 75V 240A POWERSO-10" ["xl"]=> string(15) "STripFET™ III" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "75V" ["dl_lxlj"]=> string(12) "240A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "2.6 毫欧 @ 120A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "100nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(29) "PowerSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-PowerSO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STV240N75F3复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-PowerSO
外壳：PowerSO-10 裸露底部焊盘
描述： MOSFET N-CH 75V 240A POWERSO-10
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32755 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：75V
电流-连续漏极(id)：240A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103932755
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STV240N75F3' ) LIMIT 1
array(72) { ["id"]=> string(5) "32758" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/CD00153541.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10.jpg" ["ljbh"]=> string(13) "497-7614-2-ND" ["zzsbh"]=> string(11) "STV300NH02L" ["zddgs"]=> string(3) "600" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 24V 280A POWERSO-10" ["xl"]=> string(15) "STripFET™ III" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "24V" ["dl_lxlj"]=> string(12) "200A（Tc）" ["qddy"]=> string(8) "10V，5V" ["bt_id_vgs_rds"]=> string(20) "1 毫欧 @ 80A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "109nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7055pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(29) "PowerSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-PowerSO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STV300NH02L复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-PowerSO
外壳：PowerSO-10 裸露底部焊盘
描述： MOSFET N-CH 24V 280A POWERSO-10
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32758 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：24V
电流-连续漏极(id)：200A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103932758
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STV300NH02L' ) LIMIT 1
array(72) { ["id"]=> string(5) "35353" ["pdf_add"]=> string(82) "//media.digikey.com/pdf/Data%20Sheets/ST%20Microelectronics%20PDFS/STV160NF03L.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10.jpg" ["ljbh"]=> string(13) "497-3252-2-ND" ["zzsbh"]=> string(13) "STV160NF03LT4" ["zddgs"]=> string(3) "600" ["xysl"]=> string(3) "600" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 30V 160A POWERSO-10" ["xl"]=> string(11) "STripFET™" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "160A（Tc）" ["qddy"]=> string(8) "5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.8 毫欧 @ 80A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "140nC @ 10V" ["vgs_zdz"]=> string(5) "±15V" ["bt_vds_srdr"]=> string(12) "4700pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "210W（Tc）" ["gzwd"]=> string(14) "175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(29) "PowerSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-PowerSO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STV160NF03LT4复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-PowerSO
外壳：PowerSO-10 裸露底部焊盘
描述： MOSFET N-CH 30V 160A POWERSO-10
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35353 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：160A（Tc）
Vgs(最大值)：±15V
功率-最大值：210W（Tc）
工作温度：175°C（TJ）
丝印：(请登录)
料号：103935353
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STV160NF03LT4' ) LIMIT 1
array(72) { ["id"]=> string(5) "35361" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/CD00188712.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10.jpg" ["ljbh"]=> string(13) "497-7028-2-ND" ["zzsbh"]=> string(11) "STV200N55F3" ["zddgs"]=> string(3) "600" ["xysl"]=> string(4) "1200" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 55V 200A POWERSO-10" ["xl"]=> string(11) "STripFET™" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "55V" ["dl_lxlj"]=> string(12) "200A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.5 毫欧 @ 75A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "100nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(29) "PowerSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-PowerSO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STV200N55F3复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-PowerSO
外壳：PowerSO-10 裸露底部焊盘
描述： MOSFET N-CH 55V 200A POWERSO-10
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35361 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：55V
电流-连续漏极(id)：200A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103935361
量大可议价
起订量:10 修改
包装量: 修改
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STV200N55F3' ) LIMIT 1
array(68) { ["id"]=> string(2) "15" ["pdf_add"]=> string(50) "http://www.st.com/web/en/resource/technical/docume" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(13) "497-5297-5-ND" ["zzsbh"]=> string(9) "PD55003-E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "340" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "FET RF 40V 500MHZ PWRSO10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "500MHz" ["zy"]=> string(4) "17dB" ["dy_cs"]=> string(5) "12.5V" ["eddl"]=> string(4) "2.5A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(4) "50mA" ["gl_sc"]=> string(2) "3W" ["dy_ed"]=> string(3) "40V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD55003-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 40V 500MHZ PWRSO10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 15 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：500MHz
增益(dB)：17dB
测试电压(V)：12.5V
额定电流(A)：2.5A
输出功率(W)：3W
额定电压(V)：40V
丝印：(请登录)
料号：104015
量大可议价
起订量:10 修改
包装量: 修改
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咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD55003-E' ) LIMIT 1
array(68) { ["id"]=> string(2) "98" ["pdf_add"]=> string(50) "http://www.st.com/web/en/resource/technical/docume" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(13) "497-5304-5-ND" ["zzsbh"]=> string(9) "PD57002-E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "411" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "FET RF 65V 960MHZ PWRSO10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "960MHz" ["zy"]=> string(4) "15dB" ["dy_cs"]=> string(3) "28V" ["eddl"]=> string(5) "250mA" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(4) "10mA" ["gl_sc"]=> string(2) "2W" ["dy_ed"]=> string(3) "65V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD57002-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 65V 960MHZ PWRSO10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 98 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：960MHz
增益(dB)：15dB
测试电压(V)：28V
额定电流(A)：250mA
输出功率(W)：2W
额定电压(V)：65V
丝印：(请登录)
料号：104098
量大可议价
起订量:10 修改
包装量: 修改
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD57002-E' ) LIMIT 1
array(68) { ["id"]=> string(3) "112" ["pdf_add"]=> string(50) "http://www.st.com/web/en/resource/technical/docume" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(13) "497-5309-5-ND" ["zzsbh"]=> string(9) "PD57060-E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(4) "1193" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "FET RF 65V 945MHZ PWRSO10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "945MHz" ["zy"]=> string(6) "14.3dB" ["dy_cs"]=> string(3) "28V" ["eddl"]=> string(2) "7A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(5) "100mA" ["gl_sc"]=> string(3) "60W" ["dy_ed"]=> string(3) "65V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD57060-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 65V 945MHZ PWRSO10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 112 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：945MHz
增益(dB)：14.3dB
测试电压(V)：28V
额定电流(A)：7A
输出功率(W)：60W
额定电压(V)：65V
丝印：(请登录)
料号：1040112
量大可议价
起订量:10 修改
包装量: 修改
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD57060-E' ) LIMIT 1
array(68) { ["id"]=> string(3) "142" ["pdf_add"]=> string(50) "http://www.st.com/web/en/resource/technical/docume" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(13) "497-5299-5-ND" ["zzsbh"]=> string(9) "PD55008-E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "305" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "FET RF 40V 500MHZ PWRSO10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "500MHz" ["zy"]=> string(4) "17dB" ["dy_cs"]=> string(5) "12.5V" ["eddl"]=> string(2) "4A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(5) "150mA" ["gl_sc"]=> string(2) "8W" ["dy_ed"]=> string(3) "40V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD55008-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 40V 500MHZ PWRSO10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 142 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：500MHz
增益(dB)：17dB
测试电压(V)：12.5V
额定电流(A)：4A
输出功率(W)：8W
额定电压(V)：40V
丝印：(请登录)
料号：1040142
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD55008-E' ) LIMIT 1
array(68) { ["id"]=> string(3) "146" ["pdf_add"]=> string(50) "http://www.st.com/web/en/resource/technical/docume" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(13) "497-5301-5-ND" ["zzsbh"]=> string(9) "PD55025-E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "302" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "FET RF 40V 500MHZ PWRSO10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "500MHz" ["zy"]=> string(6) "14.5dB" ["dy_cs"]=> string(5) "12.5V" ["eddl"]=> string(2) "7A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(5) "200mA" ["gl_sc"]=> string(3) "25W" ["dy_ed"]=> string(3) "40V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD55025-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 40V 500MHZ PWRSO10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 146 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：500MHz
增益(dB)：14.5dB
测试电压(V)：12.5V
额定电流(A)：7A
输出功率(W)：25W
额定电压(V)：40V
丝印：(请登录)
料号：1040146
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD55025-E' ) LIMIT 1
array(68) { ["id"]=> string(3) "191" ["pdf_add"]=> string(50) "http://www.st.com/content/ccc/resource/technical/d" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(13) "497-5296-5-ND" ["zzsbh"]=> string(9) "PD54008-E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "737" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "FET RF 25V 500MHZ PWRSO10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "500MHz" ["zy"]=> string(6) "11.5dB" ["dy_cs"]=> string(4) "7.5V" ["eddl"]=> string(2) "5A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(5) "150mA" ["gl_sc"]=> string(2) "8W" ["dy_ed"]=> string(3) "25V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD54008-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 25V 500MHZ PWRSO10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 191 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：500MHz
增益(dB)：11.5dB
测试电压(V)：7.5V
额定电流(A)：5A
输出功率(W)：8W
额定电压(V)：25V
丝印：(请登录)
料号：1040191
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD54008-E' ) LIMIT 1
array(68) { ["id"]=> string(3) "194" ["pdf_add"]=> string(50) "http://www.st.com/content/ccc/resource/technical/d" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(13) "497-5307-5-ND" ["zzsbh"]=> string(9) "PD57030-E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "556" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "FET RF 65V 945MHZ PWRSO10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "945MHz" ["zy"]=> string(4) "14dB" ["dy_cs"]=> string(3) "28V" ["eddl"]=> string(2) "4A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(4) "50mA" ["gl_sc"]=> string(3) "30W" ["dy_ed"]=> string(3) "65V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD57030-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 65V 945MHZ PWRSO10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 194 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：945MHz
增益(dB)：14dB
测试电压(V)：28V
额定电流(A)：4A
输出功率(W)：30W
额定电压(V)：65V
丝印：(请登录)
料号：1040194
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD57030-E' ) LIMIT 1
array(68) { ["id"]=> string(3) "205" ["pdf_add"]=> string(50) "http://www.st.com/content/ccc/resource/technical/d" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(13) "497-5305-5-ND" ["zzsbh"]=> string(9) "PD57018-E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "271" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "FET RF 65V 945MHZ PWRSO10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "945MHz" ["zy"]=> string(6) "16.5dB" ["dy_cs"]=> string(3) "28V" ["eddl"]=> string(4) "2.5A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(5) "100mA" ["gl_sc"]=> string(3) "18W" ["dy_ed"]=> string(3) "65V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD57018-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 65V 945MHZ PWRSO10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 205 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：945MHz
增益(dB)：16.5dB
测试电压(V)：28V
额定电流(A)：2.5A
输出功率(W)：18W
额定电压(V)：65V
丝印：(请登录)
料号：1040205
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD57018-E' ) LIMIT 1
array(68) { ["id"]=> string(3) "323" ["pdf_add"]=> string(50) "http://www.st.com/content/ccc/resource/technical/d" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(14) "497-10292-5-ND" ["zzsbh"]=> string(9) "PD84006-E" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "175" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "FET RF 25V 870MHZ PWRSO-10RF" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "870MHz" ["zy"]=> string(4) "15dB" ["dy_cs"]=> string(4) "7.5V" ["eddl"]=> string(2) "5A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(5) "150mA" ["gl_sc"]=> string(2) "6W" ["dy_ed"]=> string(3) "25V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD84006-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 25V 870MHZ PWRSO-10RF
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 323 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：870MHz
增益(dB)：15dB
测试电压(V)：7.5V
额定电流(A)：5A
输出功率(W)：6W
额定电压(V)：25V
丝印：(请登录)
料号：1040323
量大可议价
起订量:10 修改
包装量: 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD84006-E' ) LIMIT 1
array(68) { ["id"]=> string(3) "696" ["pdf_add"]=> string(50) "http://www.st.com/web/en/resource/technical/docume" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Formed%20Lead).jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Formed_Lead).jpg" ["ljbh"]=> string(13) "497-5295-5-ND" ["zzsbh"]=> string(9) "PD54003-E" ["zddgs"]=> string(3) "400" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "FET RF 25V 500MHZ PWRSO10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "500MHz" ["zy"]=> string(4) "12dB" ["dy_cs"]=> string(4) "7.5V" ["eddl"]=> string(2) "4A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(4) "50mA" ["gl_sc"]=> string(2) "3W" ["dy_ed"]=> string(3) "25V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD54003-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 25V 500MHZ PWRSO10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 696 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：500MHz
增益(dB)：12dB
测试电压(V)：7.5V
额定电流(A)：4A
输出功率(W)：3W
额定电压(V)：25V
丝印：(请登录)
料号：1040696
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD54003-E' ) LIMIT 1
array(68) { ["id"]=> string(3) "698" ["pdf_add"]=> string(50) "http://www.st.com/web/en/resource/technical/docume" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/STMicro%20Renders/PowerSO-10RF%20(Straight%20Lead).jpg" ["images"]=> string(98) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/PowerSO-10RF_(Straight_Lead).jpg" ["ljbh"]=> string(14) "PD55003TR-E-ND" ["zzsbh"]=> string(11) "PD55003TR-E" ["zddgs"]=> string(3) "600" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "FET RF 40V 500MHZ PWRSO-10" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(5) "LDMOS" ["pl"]=> string(6) "500MHz" ["zy"]=> string(4) "17dB" ["dy_cs"]=> string(5) "12.5V" ["eddl"]=> string(4) "2.5A" ["zsxs"]=> string(1) "-" ["dl_cs"]=> string(4) "50mA" ["gl_sc"]=> string(2) "3W" ["dy_ed"]=> string(3) "40V" ["fz_wk"]=> string(29) "POWERSO-10 裸露底部焊盘" ["gysqjfz"]=> string(10) "10-POWERSO" ["gzwd"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "130" ["wl_num"]=> string(4) "1040" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_sp" ["ch_bm"]=> string(17) "高频-FET,MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1040" ["parent_id"]=> string(3) "121" ["lb"]=> string(28) "晶体管 高频-FET,MOS管" ["action_name"]=> string(4) "jtg9" ["rate"]=> string(5) "1.155" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5050" } }
型号： PD55003TR-E复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：10-POWERSO
外壳：POWERSO-10 裸露底部焊盘
描述： FET RF 40V 500MHZ PWRSO-10
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 698 ) LIMIT 1
晶体管类型：LDMOS
频率(Hz)：500MHz
增益(dB)：17dB
测试电压(V)：12.5V
额定电流(A)：2.5A
输出功率(W)：3W
额定电压(V)：40V
丝印：(请登录)
料号：1040698
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'PD55003TR-E' ) LIMIT 1

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