首页 >> 所有制造商 >> Vishay/威世

类目:
更多
封装:
清除条件
封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(74) { ["id"]=> string(4) "5170" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74451/sie822df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SIE822DF-T1-E3TR-ND" ["zzsbh"]=> string(14) "SIE822DF-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 20V 50A 10-POLARPAK" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "3.4 毫欧 @ 18.3A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "78nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4200pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE822DF-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 20V 50A 10-POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5170 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395170
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE822DF-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(4) "5387" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74414/sie832df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SIE832DF-T1-E3TR-ND" ["zzsbh"]=> string(14) "SIE832DF-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 40V 50A 10-POLARPAK" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.5 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "77nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3800pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE832DF-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 40V 50A 10-POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5387 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10395387
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE832DF-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(5) "17308" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73199/sie800df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SIE800DF-T1-GE3-ND" ["zzsbh"]=> string(15) "SIE800DF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 50A POLARPAK" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.2 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "35nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1600pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE800DF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 30V 50A POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 17308 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103917308
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE800DF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "17313" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74422/sie830df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SIE830DF-T1-GE3-ND" ["zzsbh"]=> string(15) "SIE830DF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 50A POLARPAK" ["xl"]=> string(6) "WFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.2 毫欧 @ 16A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "115nC @ 10V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "5500pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE830DF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 30V 50A POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 17313 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±12V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103917313
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE830DF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "18851" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/73199/sie800df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SIE800DF-T1-E3TR-ND" ["zzsbh"]=> string(14) "SIE800DF-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 30V 50A 10-POLARPAK" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.2 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "35nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1600pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE800DF-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 30V 50A 10-POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 18851 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103918851
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE800DF-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(5) "18857" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74447/sie820df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SIE820DF-T1-E3TR-ND" ["zzsbh"]=> string(14) "SIE820DF-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 20V 50A 10-POLARPAK" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "3.5 毫欧 @ 18A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "143nC @ 10V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "4300pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE820DF-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 20V 50A 10-POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 18857 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±12V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103918857
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE820DF-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(5) "18860" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74422/sie830df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SIE830DF-T1-E3TR-ND" ["zzsbh"]=> string(14) "SIE830DF-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 30V 50A 10-POLARPAK" ["xl"]=> string(6) "WFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.2 毫欧 @ 16A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "115nC @ 10V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "5500pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE830DF-T1-E3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 30V 50A 10-POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 18860 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±12V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103918860
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE830DF-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(5) "20118" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74451/sie822df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SIE822DF-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SIE822DF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 20V 50A POLARPAK" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(24) "3.4 毫欧 @ 18.3A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "78nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4200pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE822DF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 20V 50A POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20118 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920118
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE822DF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "20166" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74447/sie820df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SIE820DF-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SIE820DF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 20V 50A POLARPAK" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(11) "2.5V，4.5V" ["bt_id_vgs_rds"]=> string(23) "3.5 毫欧 @ 18A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "143nC @ 10V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "4300pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE820DF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 20V 50A POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20166 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±12V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920166
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE820DF-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(5) "35767" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/74414/sie832df.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/Pkg%205947.jpg" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/Pkg_5947.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SIE832DF-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SIE832DF-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 40V 50A 10-POLARPAK" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "50A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "5.5 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "77nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3800pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "5.2W（Ta），104W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(20) "10-PolarPAK®（S）" ["gysqjfz"]=> string(20) "10-PolarPAK®（S）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "10" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SIE832DF-T1-GE3复制
状态： 在售 修改
品牌： Vishay/威世复制
封装：10-PolarPAK®（S）
外壳：10-PolarPAK®（S）
描述： MOSFET N-CH 40V 50A 10-POLARPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35767 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.2W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103935767
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIE832DF-T1-GE3' ) LIMIT 1

辰科物联

https://www.chenkeiot.com/

已成功加入购物车！
去购物车结算 继续采购
复制成功

业务介绍

芯片采购
芯片丝印
商品选型
芯片烧录
开发工具
Bom采购
SMT贴片

购物指南

注册登录
找回密码
购物流程
常见问题
支付方式
配送方式

联系我们

直线：0755-28435922
总部地址：广东省深圳市龙岗区坂田上雪村金鹏工业区新一栋5楼
联系我们
公司简介

关注我们

微信扫码
辰科物联介绍

粤公网安备 号

粤ICP备2023141824号-1

Copyright © 2002-2025 深圳市辰科物联有限公司 版权所有

销售在线 销售在线 工程师在线 工程师在线 电话咨询

销售在线

刘s:2355289363

手机: 15074164838

销售在线

陈s:2355289368

手机: 13510573285

工程师在线

吴工:2355289360

手机: 13824329149

工程师在线

陈工:2355289365

手机: 15818753382

电话咨询

0755-28435922